HUASHUO HSST3139 p channel mosfet featuring fast switching speed and low rds on for power conversion
Key Attributes
Model Number:
HSST3139
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
1A
Operating Temperature -:
-55℃~+150℃
RDS(on):
230mΩ@4.5V,1A
Gate Threshold Voltage (Vgs(th)):
1V
Reverse Transfer Capacitance (Crss@Vds):
131pF@15V
Number:
1 P-Channel
Input Capacitance(Ciss):
530pF@15V
Pd - Power Dissipation:
750mW
Gate Charge(Qg):
6nC@4.5V
Mfr. Part #:
HSST3139
Package:
SOT-523
Product Description
Product Overview
The HSST3139 is a P-channel, 20V fast switching MOSFET designed with high cell density trench technology. It offers excellent RDS(ON) and gate charge, making it suitable for synchronous buck converter applications. This MOSFET meets RoHS and Green Product requirements and has undergone full function reliability approval. Key features include super low gate charge, low threshold voltage, and suitability for high-side switching.
Product Attributes
- Brand: HS-Semi
- Product Type: P-Channel MOSFET
- Voltage Rating: 20V
- Switching Speed: Fast Switching
- Technology: Advanced high cell density Trench technology
- Certifications: RoHS, Green Product
Technical Specifications
| Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|
| Absolute Maximum Ratings | |||||
| VDS (Drain-Source Voltage) | -20 | V | |||
| VGS (Gate-Source Voltage) | 8 | V | |||
| ID (Continuous Drain Current) | @TA=25, VGS @ -4.5V1 | -1 | A | ||
| IDM (Pulsed Drain Current)2 | -4 | A | |||
| PD (Total Power Dissipation) | @TA=253 | 0.75 | W | ||
| TSTG (Storage Temperature Range) | -55 | 150 | |||
| TJ (Operating Junction Temperature Range) | -55 | 150 | |||
| Thermal Data | |||||
| RJA (Thermal Resistance Junction-Ambient) | 100 | /W | |||
| Electrical Characteristics (TJ=25 , unless otherwise noted) | |||||
| BVDSS (Drain-Source Breakdown Voltage) | VGS=0V , ID=-250uA | -20 | V | ||
| BVDSS/TJ (BVDSS Temperature Coefficient) | Reference to 25 , ID=-1mA | -0.014 | V/ | ||
| RDS(ON) (Static Drain-Source On-Resistance)2 | VGS=-4.5V , ID=-1A | 190 | 230 | m | |
| VGS=-2.5V , ID=-0.8A | 240 | 290 | m | ||
| VGS(th) (Gate Threshold Voltage) | VGS=VDS , ID =-250uA | -0.5 | -1 | V | |
| VGS(th)/TJ (VGS(th) Temperature Coefficient) | 3.95 | mV/ | |||
| IDSS (Drain-Source Leakage Current) | VDS=-16V , VGS=0V , TJ=25 | -1 | uA | ||
| VDS=-16V , VGS=0V , TJ=55 | -5 | uA | |||
| IGSS (Gate-Source Leakage Current) | VGS=10V , VDS=0V | 20 | nA | ||
| gfs (Forward Transconductance) | VDS=-10V , ID=-0.5A | 0.7 | S | ||
| SQg (Total Gate Charge) | (-4.5V) VDS=-10V , VGS=-4.5V , ID=-0.6A | 6 | nC | ||
| Qgs (Gate-Source Charge) | 1.2 | ||||
| Qgd (Gate-Drain Charge) | 1.1 | ||||
| Td(on) (Turn-On Delay Time) | VDD=-10V , VGS=-4.5V , RG=10, ID=-0.2A | 9 | ns | ||
| Tr (Rise Time) | 6 | ||||
| Td(off) (Turn-Off Delay Time) | 30 | ns | |||
| Tf (Fall Time) | 11 | ||||
| Capacitance | Ciss (Input Capacitance) VDS=-15V , VGS=0V , f=1MHz | 530 | pF | ||
| Coss (Output Capacitance) | 160 | pF | |||
| Crss (Reverse Transfer Capacitance) | 131 | pF | |||
| Diode Characteristics | |||||
| VSD (Diode Forward Voltage)2 | VGS=0V , IS=-1A , TJ=25 | -1.2 | V | ||
Ordering Information
| Part Number | Package Code | Packaging |
|---|---|---|
| HSST3139 | SOT-523 | 3000/Tape&Reel |
2410121532_HUASHUO-HSST3139_C700948.pdf
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