Low gate charge trench MOSFET HSW6604 suitable for small power switching and load switch applications
Key Attributes
Model Number:
HSW6604
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
4A
Operating Temperature -:
-55℃~+150℃
RDS(on):
80mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.2V@250uA
Type:
N-Channel + P-Channel
Reverse Transfer Capacitance (Crss@Vds):
52pF
Number:
1 N-Channel + 1 P-Channel
Output Capacitance(Coss):
61pF
Input Capacitance(Ciss):
561pF
Pd - Power Dissipation:
1.1W
Gate Charge(Qg):
6.1nC@4.5V
Mfr. Part #:
HSW6604
Package:
SOT-23-6L
Product Description
Product Overview
The HSW6604 is a high-performance complementary N-channel and P-channel MOSFET featuring high cell density. It offers excellent RDSON and gate charge characteristics, making it suitable for most small power switching and load switch applications. The HSW6604 meets RoHS and Green Product requirements and has full function reliability approval. It is available as a Green Device and utilizes advanced high cell density Trench technology for excellent Cdv/dt effect decline and super low gate charge.Product Attributes
- Brand: HSW
- Technology: Trench
- Certifications: RoHS, Green Product
- Package: SOT23-6L
Technical Specifications
| HSW6604 N-Channel MOSFET | ||||||
|---|---|---|---|---|---|---|
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
| VDS | Drain-Source Voltage | Steady State | 20 | - | - | V |
| VGS | Gate-Source Voltage | Steady State | 12 | - | - | V |
| ID@TA=25 | Continuous Drain Current | VGS @ -4.5V | 4 | - | - | A |
| ID@TA=70 | Continuous Drain Current | VGS @ -4.5V | 3 | - | - | A |
| IDM | Pulsed Drain Current | - | 16 | - | - | A |
| PD@TA=25 | Total Power Dissipation | - | 1.1 | - | - | W |
| TSTG | Storage Temperature Range | - | -55 | - | 150 | |
| TJ | Operating Junction Temperature Range | - | -55 | - | 150 | |
| RJA | Thermal Resistance Junction-ambient | - | - | - | 100 | /W |
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=250uA | 20 | - | - | V |
| RDS(ON) | Static Drain-Source On-Resistance | VGS=4.5V , ID=3A | - | 38 | 48 | m |
| RDS(ON) | Static Drain-Source On-Resistance | VGS=2.5V , ID=2A | - | 45 | 55 | m |
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =250uA | 0.5 | 0.75 | 1.2 | V |
| IDSS | Drain-Source Leakage Current | VDS=16V , VGS=0V , TJ=25 | - | - | 1 | uA |
| IDSS | Drain-Source Leakage Current | VDS=16V , VGS=0V , TJ=55 | - | - | 5 | uA |
| IGSS | Gate-Source Leakage Current | VGS=12V , VDS=0V | - | - | 100 | nA |
| gfs | Forward Transconductance | VDS=5V , ID=3A | - | 5 | - | S |
| Qg | Total Gate Charge (4.5V) | VDS=10V , VGS=4.5V , ID=3A | - | 2.7 | - | nC |
| Qgs | Gate-Source Charge | - | - | 0.4 | - | - |
| Qgd | Gate-Drain Charge | - | - | 0.5 | - | - |
| Td(on) | Turn-On Delay Time | VDD=10V , VGS=4.5V , RG=3.3, ID=3A | - | 2.3 | - | ns |
| Tr | Rise Time | - | - | 3.1 | - | ns |
| Td(off) | Turn-Off Delay Time | - | - | 21 | - | ns |
| Tf | Fall Time | - | - | 2.6 | - | ns |
| Ciss | Input Capacitance | VDS=10V , VGS=0V , f=1MHz | - | 240 | - | pF |
| Coss | Output Capacitance | - | - | 49 | - | pF |
| Crss | Reverse Transfer Capacitance | - | - | 23 | - | pF |
| IS | Continuous Source Current | VG=VD=0V , Force Current | - | - | 1.8 | A |
| VSD | Diode Forward Voltage | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V |
| HSW6604 P-Channel MOSFET | ||||||
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
| VDS | Drain-Source Voltage | Steady State | -20 | - | - | V |
| VGS | Gate-Source Voltage | Steady State | 12 | - | - | V |
| ID@TA=25 | Continuous Drain Current | VGS @ -4.5V | -3 | - | - | A |
| ID@TA=70 | Continuous Drain Current | VGS @ -4.5V | -2.6 | - | - | A |
| IDM | Pulsed Drain Current | - | -12.8 | - | - | A |
| PD@TA=25 | Total Power Dissipation | - | 1.1 | - | - | W |
| TSTG | Storage Temperature Range | - | -55 | - | 150 | |
| TJ | Operating Junction Temperature Range | - | -55 | - | 150 | |
| RJA | Thermal Resistance Junction-ambient | - | - | - | 100 | /W |
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=-250uA | -20 | - | - | V |
| RDS(ON) | Static Drain-Source On-Resistance | VGS=-4.5V , ID=-3A | - | 64 | 80 | m |
| RDS(ON) | Static Drain-Source On-Resistance | VGS=-2.5V , ID=-2A | - | 82 | 120 | m |
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =-250uA | -0.4 | -0.65 | -1.2 | V |
| IDSS | Drain-Source Leakage Current | VDS=-16V , VGS=0V , TJ=25 | - | - | -1 | uA |
| IDSS | Drain-Source Leakage Current | VDS=-16V , VGS=0V , TJ=55 | - | - | -5 | uA |
| IGSS | Gate-Source Leakage Current | VGS=12V , VDS=0V | - | - | 100 | nA |
| gfs | Forward Transconductance | VDS=-5V , ID=-3A | - | 5 | - | S |
| Qg | Total Gate Charge (-4.5V) | VDS=-10V , VGS=-4.5V , ID=-3A | - | 6.1 | - | nC |
| Qgs | Gate-Source Charge | - | - | 1.7 | - | - |
| Qgd | Gate-Drain Charge | - | - | 1.2 | - | - |
| Td(on) | Turn-On Delay Time | VDD=-10V , VGS=-4.5V , RG=3.3, ID=-3A | - | 12 | - | ns |
| Tr | Rise Time | - | - | 6.6 | - | ns |
| Td(off) | Turn-Off Delay Time | - | - | 113 | - | ns |
| Tf | Fall Time | - | - | 46 | - | ns |
| Ciss | Input Capacitance | VDS=-10V , VGS=0V , f=1MHz | - | 561 | - | pF |
| Coss | Output Capacitance | - | - | 61 | - | pF |
| Crss | Reverse Transfer Capacitance | - | - | 52 | - | pF |
| IS | Continuous Source Current | VG=VD=0V , Force Current | - | - | -1.8 | A |
| VSD | Diode Forward Voltage | VGS=0V , IS=-1A , TJ=25 | - | -0.81 | -1.2 | V |
2410121447_HUASHUO-HSW6604_C2828482.pdf
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