load switch MOSFET HUASHUO HSBG2024 with trenched N channel structure and low gate threshold voltage
Key Attributes
Model Number:
HSBG2024
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
1.4A
Operating Temperature -:
-55℃~+150℃
RDS(on):
234mΩ@2.5V,450mA
Gate Threshold Voltage (Vgs(th)):
500mV
Reverse Transfer Capacitance (Crss@Vds):
5pF@10V
Number:
1 N-channel
Input Capacitance(Ciss):
44pF@10V
Pd - Power Dissipation:
700mW
Gate Charge(Qg):
1.2nC@4.5V
Mfr. Part #:
HSBG2024
Package:
DFN1006-3
Product Description
Product Overview
The HSBG2024 is a high cell density trenched N-channel MOSFET designed for excellent RDS(ON) and efficiency in small power switching and load switch applications. It features a small single switch design, ESD protected gate, and low gate threshold voltage. This MOSFET meets RoHS and Green Product requirements with full function reliability approval.
Product Attributes
- Brand: HSBG
- Product Type: N-Ch MOSFET
- Voltage Rating: 20V
- Switching Speed: Fast Switching
- Certifications: RoHS, Green Product
- Gate Protection: ESD Protected Gate
- Threshold Voltage: Low Gate Threshold Voltage
- Package: DFN1006-3
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | 20 | V | |||
| VGS | Gate-Source Voltage | ±8 | ±8 | V | ||
| ID@TA=25 | Continuous Drain Current, VGS @ 4.5V1 | 1.4 | A | |||
| ID@TA=70 | Continuous Drain Current, VGS @ 4.5V1 | 1.11 | A | |||
| IDM | Pulsed Drain Current2 | 3.5 | A | |||
| PD@TA=25 | Total Power Dissipation3 | 0.7 | W | |||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| RJA | Thermal Resistance Junction-ambient | 200 | /W | |||
| Electrical Characteristics (TJ=25 , unless otherwise noted) | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=250uA | 20 | V | ||
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=4.5V , ID=550mA | 190 | 230 | m | |
| VGS=2.5V , ID=450mA | 234 | 305 | m | |||
| VGS=1.8V , ID=350mA | 303 | 455 | m | |||
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =250uA | 0.5 | 1 | V | |
| IDSS | Drain-Source Leakage Current | VDS=16V , VGS=0V , TJ=25 | 1 | uA | ||
| VDS=16V , VGS=0V , TJ=55 | 5 | uA | ||||
| IGSS | Gate-Source Leakage Current | VGS=±8V , VDS=0V | ±10 | uA | ||
| gfs | Forward Transconductance | VDS=5V , ID=550mA | 1 | S | ||
| Qg | Total Gate Charge (4.5V) | VDS=10V , VGS=4.5V , ID=1000mA | 1.2 | nC | ||
| Qgs | Gate-Source Charge | 2.1 | nC | |||
| Qgd | Gate-Drain Charge | 0.31 | nC | |||
| Td(on) | Turn-On Delay Time | VDD=10V , VGS=4.5V , RG=6 ID=500mA | 1.2 | ns | ||
| Tr | Rise Time | 24 | ns | |||
| Td(off) | Turn-Off Delay Time | 15 | ns | |||
| Tf | Fall Time | 14 | ns | |||
| Ciss | Input Capacitance | VDS=10V , VGS=0V , f=1MHz | 44 | pF | ||
| Coss | Output Capacitance | 9 | pF | |||
| Crss | Reverse Transfer Capacitance | 5 | pF | |||
| Diode Characteristics | ||||||
| IS | Continuous Source Current1,4 | VG=VD=0V , Force Current | 1.4 | A | ||
| VSD | Diode Forward Voltage2 | VGS=0V , IS=1A , TJ=25 | 1.1 | V | ||
Ordering Information
| Part Number | Package Code | Packaging | Quantity |
|---|---|---|---|
| HSBG2024 | DFN1006-3 | Tape&Reel | 10000 |
2410121326_HUASHUO-HSBG2024_C508789.pdf
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