P channel MOSFET HUASHUO HSP110P04 featuring high cell density and low gate charge for fast switching
Key Attributes
Model Number:
HSP110P04
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
110A
RDS(on):
-
Operating Temperature -:
-55℃~+150℃@(Tj)
Gate Threshold Voltage (Vgs(th)):
2.5V
Reverse Transfer Capacitance (Crss@Vds):
722pF@20V
Number:
1 P-Channel
Input Capacitance(Ciss):
7.09nF@20V
Pd - Power Dissipation:
200W
Gate Charge(Qg):
-
Mfr. Part #:
HSP110P04
Package:
TO-220
Product Description
Product Overview
The HSP110P04 is a high cell density trenched P-channel MOSFET designed for fast switching applications. It offers excellent RDS(ON) and gate charge, making it suitable for synchronous buck converter applications. This device meets RoHS and Green Product requirements, is 100% EAS guaranteed, and has full function reliability approval. It features super low gate charge, excellent Cdv/dt effect decline, and is available as a Green Device.
Product Attributes
- Brand: HS-Semi
- Product Type: P-Channel MOSFET
- Technology: Advanced high cell density Trench technology
- Certifications: RoHS, Green Product
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | -40 | V | |||
| VGS | Gate-Source Voltage | 20 | V | |||
| ID@TC=25 | Continuous Drain Current, VGS @ -10V1 | -110 | A | |||
| ID@TC=100 | Continuous Drain Current, VGS @ -10V1 | -70 | A | |||
| IDM | Pulsed Drain Current2 | -295 | A | |||
| EAS | Single Pulse Avalanche Energy3 | 380 | mJ | |||
| IAS | Avalanche Current | -50 | A | |||
| PD@TC=25 | Total Power Dissipation4 | 200 | W | |||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| Thermal Data | ||||||
| RJA | Thermal Resistance Junction-Ambient | --- | 62 | /W | ||
| RJC | Thermal Resistance Junction-Case1 | --- | 0.81 | /W | ||
| Electrical Characteristics (TJ=25 , unless otherwise noted) | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=-250uA | -40 | --- | --- | V |
| BVDSS/TJ | BVDSS Temperature Coefficient | Reference to 25 , ID=-1mA | --- | -0.023 | --- | V/ |
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=-10V , ID=-20A | --- | 5.3 | 5.8 | m |
| VGS=-4.5V , ID=-10A | --- | 7.0 | 9.1 | m | ||
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =-250uA | -1.2 | -1.8 | -2.5 | V |
| VGS(th) | VGS(th) Temperature Coefficient | --- | 4.74 | --- | mV/ | |
| IDSS | Drain-Source Leakage Current | VDS=-32V , VGS=0V , TJ=25 | --- | --- | 1 | uA |
| VDS=-32V , VGS=0V , TJ=55 | --- | --- | 5 | uA | ||
| IGSS | Gate-Source Leakage Current | VGS=20V , VDS=0V | --- | --- | 100 | nA |
| gfs | Forward Transconductance | VDS=-15V , ID=-18A | --- | 50 | --- | S |
| Rg | Gate Resistance | VDS=0V , VGS=0V , f=1MHz | --- | 7 | 14 | |
| Qg | Total Gate Charge | VDS=-20V , VGS=-10V , ID=-12A | --- | 115 | --- | nC |
| Qgs | Gate-Source Charge | --- | 24 | --- | nC | |
| Qgd | Gate-Drain Charge | --- | 26 | --- | nC | |
| Td(on) | Turn-On Delay Time | VDD=-20V , VGS=-10V , RG=3, ID=-12A | --- | 19 | --- | ns |
| Tr | Rise Time | --- | 12 | --- | ns | |
| Td(off) | Turn-Off Delay Time | --- | 80 | --- | ns | |
| Tf | Fall Time | --- | 18 | --- | ns | |
| Ciss | Input Capacitance | VDS=-20V , VGS=0V , f=1MHz | --- | 7090 | --- | pF |
| Coss | Output Capacitance | --- | 930 | --- | pF | |
| Crss | Reverse Transfer Capacitance | --- | 722 | --- | pF | |
| Diode Characteristics | ||||||
| IS | Continuous Source Current1,5 | VG=VD=0V , Force Current | --- | --- | -100 | A |
| VSD | Diode Forward Voltage2 | VGS=0V , IS=-1A , TJ=25 | --- | --- | -1.2 | V |
2410121631_HUASHUO-HSP110P04_C7543764.pdf
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