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quality N Channel MOSFET HUASHUO HSS3N10 Featuring High Cell Density Trenched Design for and Switching factory
quality N Channel MOSFET HUASHUO HSS3N10 Featuring High Cell Density Trenched Design for and Switching factory

N Channel MOSFET HUASHUO HSS3N10 Featuring High Cell Density Trenched Design for and Switching

Key Attributes
Model Number: HSS3N10
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
3A
RDS(on):
140mΩ@10V,3A
Gate Threshold Voltage (Vgs(th)):
3V
Reverse Transfer Capacitance (Crss@Vds):
1.4pF@50V
Number:
1 N-channel
Input Capacitance(Ciss):
208pF@50V
Pd - Power Dissipation:
1.2W
Gate Charge(Qg):
4.3nC@10V
Mfr. Part #:
HSS3N10
Package:
SOT-23L
Product Description

Product Overview

The HSS3N10 is a high cell density trenched N-channel MOSFET designed for fast switching applications, particularly in synchronous buck converters. It offers excellent RDS(ON) and gate charge characteristics, meeting RoHS and Green Product requirements with full functional reliability. This device is available as a Green Device and features super low gate charge and excellent Cdv/dt effect decline due to its advanced high cell density Trench technology.

Product Attributes

  • Brand: HS-Semi
  • Product Type: N-Channel Fast Switching MOSFET
  • Certifications: RoHS, Green Product

Technical Specifications

Symbol Parameter Conditions Min. Typ. Max. Units
VDS Drain-Source Voltage 100 V
VGS Gate-Source Voltage ±20 V
ID@TA=25 Continuous Drain Current, VGS @ 10V 3 A
ID@TA=100 Continuous Drain Current, VGS @ 10V 2.4 A
IDM Pulsed Drain Current 12 A
PD@TA=25 Total Power Dissipation 1.2 W
TSTG Storage Temperature Range -55 150
TJ Operating Junction Temperature Range -55 150
RJA Thermal Resistance Junction-ambient(steady state) --- --- 104 /W
RJA Thermal Resistance Junction-ambient(t<10s) --- --- 76 /W
BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA 100 --- --- V
RDS(ON) Static Drain-Source On-Resistance VGS=10V , ID=3A --- 110 140 m
RDS(ON) Static Drain-Source On-Resistance VGS=4.5V , ID=2A --- 160 300 m
VGS(th) Gate Threshold Voltage VGS=VDS , ID =250uA 1.0 1.8 3.0 V
IDSS Drain-Source Leakage Current VDS=80V , VGS=0V , TJ=25 --- --- 10 uA
IDSS Drain-Source Leakage Current VDS=80V , VGS=0V , TJ=55 --- --- 100 uA
IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA
Qg Total Gate Charge (10V) VDS=50V , VGS=10V , ID=3A --- 4.3 --- nC
Qgs Gate-Source Charge --- 1.5 --- nC
Qgd Gate-Drain Charge --- 1.0 --- nC
Td(on) Turn-On Delay Time VDD=50V , VGS=10V , RG=2 , ID=3A --- 14.3 --- ns
Tr Rise Time --- 3.4 --- ns
Td(off) Turn-Off Delay Time --- 21 --- ns
Tf Fall Time --- 2.8 --- ns
Ciss Input Capacitance VDS=50V , VGS=0V , f=1MHz --- 208 --- pF
Coss Output Capacitance --- 29 --- pF
Crss Reverse Transfer Capacitance --- 1.4 --- pF
IS Continuous Source Current VG=VD=0V , Force Current --- --- 3 A
VSD Diode Forward Voltage VGS=0V , IS=1A , TJ=25 --- --- 1.2 V
trr Reverse recovery time Is=3A,di/dt=100A/us --- 32 --- ns
Qrr Reverse recovery Charge --- 39 --- nC
Part Number Package Code Packaging
HSS3N10 SOT-23L 3000/Tape&Reel

2410121656_HUASHUO-HSS3N10_C845593.pdf

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