Trench technology P channel MOSFET HUASHUO BSS84A with 50V rating and excellent switching performance
Key Attributes
Model Number:
BSS84A
Product Custom Attributes
Drain To Source Voltage:
50V
Current - Continuous Drain(Id):
200mA
Operating Temperature -:
-55℃~+150℃@(Tj)
RDS(on):
1.8Ω@10V,0.2A
Gate Threshold Voltage (Vgs(th)):
-
Reverse Transfer Capacitance (Crss@Vds):
4pF@5V
Number:
1 P-Channel
Pd - Power Dissipation:
700mW
Input Capacitance(Ciss):
23pF@5V
Gate Charge(Qg):
1.5nC@10V
Mfr. Part #:
BSS84A
Package:
SOT-23
Product Description
Product Overview
The BSS84A is a P-channel, 50V fast switching MOSFET featuring high cell density trench technology. It offers excellent RDS(ON) and efficiency, making it ideal for small power switching and load switch applications. This device meets RoHS and Green Product requirements, with full function reliability approved. Key advantages include 100% EAS guaranteed, super low gate charge, and excellent CdV/dt effect decline.Product Attributes
- Brand: HS-Semi
- Product Type: P-Channel MOSFET
- Technology: Trench
- Certifications: RoHS, Green Product
- Reliability: Full function reliability approved
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=-250uA | -50 | --- | --- | V |
| BVDSS/TJ | BVDSS Temperature Coefficient | Reference to 25 , ID=-1mA | --- | -0.021 | --- | V/ |
| RDS(ON),max | Static Drain-Source On-Resistance | VGS=-10V , ID=-0.2A | --- | 1.2 | 1.8 | |
| RDS(ON),max | Static Drain-Source On-Resistance | VGS=-4.5V , ID=-0.1A | --- | 1.4 | 2.8 | |
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =-250uA | -1.0 | -1.5 | -2.0 | V |
| VGS(th) | VGS(th) Temperature Coefficient | --- | 4.08 | --- | mV/ | |
| IDSS | Drain-Source Leakage Current | VDS=-48V , VGS=0V , TJ=25 | --- | --- | 1 | uA |
| IDSS | Drain-Source Leakage Current | VDS=-48V , VGS=0V , TJ=55 | --- | --- | 10 | uA |
| IGSS | Gate-Source Leakage Current | VGS=20V , VDS=0V | --- | --- | 100 | nA |
| gfs | Forward Transconductance | VDS=-20V , ID=-0.2A | --- | 0.06 | --- | S |
| Qg | Total Gate Charge (-4.5V) | VDS=-20V , VGS=-10V , ID=-0.2A | --- | 1.5 | --- | nC |
| Qgs | Gate-Source Charge | --- | 0.7 | --- | nC | |
| Qgd | Gate-Drain Charge | --- | 0.3 | --- | nC | |
| Td(on) | Turn-On Delay Time | VDS=-15V , VGS=-10V , RG=50, ID=-0.2A | --- | 2.1 | --- | ns |
| Tr | Rise Time | --- | 1.1 | --- | ns | |
| Td(off) | Turn-Off Delay Time | --- | 15 | --- | ns | |
| Tf | Fall Time | --- | 9 | --- | ns | |
| Ciss | Input Capacitance | VDS=-5V , VGS=0V , f=1MHz | --- | 23 | --- | pF |
| Coss | Output Capacitance | --- | 7.3 | --- | pF | |
| Crss | Reverse Transfer Capacitance | --- | 4 | --- | pF | |
| IS | Continuous Source Current | VG=VD=0V , Force Current | --- | --- | -0.3 | A |
| ISM | Pulsed Source Current | --- | --- | -1 | A | |
| VSD | Diode Forward Voltage | VGS=0V , IS=-1A , TJ=25 | --- | -0.8 | -2.2 | V |
| Symbol | Parameter | Rating | Units |
|---|---|---|---|
| VDS | Drain-Source Voltage | -50 | V |
| VGS | Gate-Source Voltage | 20 | V |
| ID@TA=25 | Continuous Drain Current, VGS @ -10V | -0.2 | A |
| ID@TA=100 | Continuous Drain Current, VGS @ -10V | -0.14 | A |
| IDM | Pulsed Drain Current | -0.8 | A |
| PD@TA=25 | Total Power Dissipation | 0.7 | W |
| TSTG | Storage Temperature Range | -55 to 150 | |
| TJ | Operating Junction Temperature Range | -55 to 150 | |
| RJA | Thermal Resistance Junction-Ambient | 400 | /W |
| Part Number | Package Code | Packaging |
|---|---|---|
| BSS84A | SOT-23 | 3000/Tape&Reel |
2410121434_HUASHUO-BSS84A_C7543680.pdf
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