20V P channel MOSFET HUASHUO HSS2305A featuring trench technology and low gate charge for power conversion
Key Attributes
Model Number:
HSS2305A
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
4.9A
Operating Temperature -:
-55℃~+150℃
RDS(on):
45mΩ@4.5V,4.9A
Gate Threshold Voltage (Vgs(th)):
400mV
Reverse Transfer Capacitance (Crss@Vds):
151pF@15V
Number:
1 P-Channel
Input Capacitance(Ciss):
1.2nF@15V
Pd - Power Dissipation:
1.31W
Gate Charge(Qg):
14.3nC@4.5V
Mfr. Part #:
HSS2305A
Package:
SOT-23
Product Description
Product Overview
The HSS2305A is a P-channel, 20V fast switching MOSFET designed with high cell density trench technology. It offers excellent RDS(ON) and gate charge, making it suitable for synchronous buck converter applications. This device meets RoHS and Green Product requirements and has undergone full function reliability approval. Key advantages include super low gate charge, excellent CdV/dt effect decline, and advanced high cell density trench technology.
Product Attributes
- Brand: HS-Semi
- Product Type: P-Channel Fast Switching MOSFET
- Voltage Rating: 20V
- Technology: Trench
- Certifications: RoHS, Green Product
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Units | ||||
|---|---|---|---|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||||||
| VDS | Drain-Source Voltage | -20 | V | |||||||
| VGS | Gate-Source Voltage | 12 | V | |||||||
| ID@TA=25 | Continuous Drain Current, VGS @ -4.5V1 | -4.9 | A | |||||||
| ID@TA=70 | Continuous Drain Current, VGS @ -4.5V1 | -3.9 | A | |||||||
| IDM | Pulsed Drain Current2 | -14 | A | |||||||
| PD@TA=25 | Total Power Dissipation3 | 1.31 | W | |||||||
| PD@TA=70 | Total Power Dissipation3 | 0.84 | W | |||||||
| TSTG | Storage Temperature Range | -55 | 150 | |||||||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||||||
| Thermal Data | ||||||||||
| RJA | Thermal Resistance Junction-Ambient1 | 120 | /W | |||||||
| RJA | Thermal Resistance Junction-Ambient1 (t 10s) | 95 | /W | |||||||
| Electrical Characteristics (TJ=25 , unless otherwise noted) | ||||||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=-250uA | -20 | V | ||||||
| BVDSS/TJ | BVDSS Temperature Coefficient | Reference to 25 , ID=-1mA | -0.014 | V/ | ||||||
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=-4.5V , ID=-4.9A | 40 | 45 | m | |||||
| VGS=-2.5V , ID=-3.4A | 50 | 60 | VGS=-1.8V , ID=-2A | 65 | 85 | m | ||||
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =-250uA | -0.4 | -1.0 | V | |||||
| VGS(th) | VGS(th) Temperature Coefficient | 3.95 | mV/ | |||||||
| IDSS | Drain-Source Leakage Current | VDS=-16V , VGS=0V , TJ=25 | -1 | uA | ||||||
| VDS=-16V , VGS=0V , TJ=55 | -5 | uA | ||||||||
| IGSS | Gate-Source Leakage Current | VGS=12V , VDS=0V | 100 | nA | ||||||
| gfs | Forward Transconductance | VDS=-5V , ID=-3A | 12.8 | S | ||||||
| Qg | Total Gate Charge (-4.5V) | VDS=-15V , VGS=-4.5V , ID=-3A | 10.2 | 14.3 | nC | |||||
| Qgs | Gate-Source Charge | 1.89 | 2.6 | nC | ||||||
| Qgd | Gate-Drain Charge | 3.1 | 4.3 | nC | ||||||
| td(on) | Turn-On Delay Time | VDD=-10V , VGS=-4.5V , RG=3.3, ID=-3A | 5.6 | 11.2 | ns | |||||
| tr | Rise Time | 40.8 | 73 | ns | ||||||
| td(off) | Turn-Off Delay Time | 33.6 | 67 | ns | ||||||
| tf | Fall Time | 18 | 36 | ns | ||||||
| Ciss | Input Capacitance | VDS=-15V , VGS=0V , f=1MHz | 857 | 1200 | pF | |||||
| Coss | Output Capacitance | 114 | 160 | pF | ||||||
| Crss | Reverse Transfer Capacitance | 108 | 151 | pF | ||||||
| Diode Characteristics | ||||||||||
| IS | Continuous Source Current1,4 | VG=VD=0V , Force Current | -4.9 | A | ||||||
| ISM | Pulsed Source Current2,4 | -14 | A | |||||||
| VSD | Diode Forward Voltage2 | VGS=0V , IS=-1A , TJ=25 | -1 | V | ||||||
| trr | Reverse Recovery Time | IF=-3A , di/dt=100A/s , TJ=25 | 21.8 | nS | ||||||
| Qrr | Reverse Recovery Charge | 6.9 | nC | |||||||
Notes:
1 Tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2 Tested by pulsed, pulse width 300s, duty cycle 2%.
3 Power dissipation is limited by 150 junction temperature.
4 Data is theoretically the same as ID and IDM; in real applications, should be limited by total power dissipation.
2410121447_HUASHUO-HSS2305A_C518799.pdf
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