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quality High current n channel mosfet HUASHUO HSP3018B with excellent gate charge and rds on characteristics factory
quality High current n channel mosfet HUASHUO HSP3018B with excellent gate charge and rds on characteristics factory

High current n channel mosfet HUASHUO HSP3018B with excellent gate charge and rds on characteristics

Key Attributes
Model Number: HSP3018B
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
205A
Operating Temperature -:
-55℃~+150℃
RDS(on):
2.4mΩ@10V,30A
Gate Threshold Voltage (Vgs(th)):
2.5V
Reverse Transfer Capacitance (Crss@Vds):
525pF@15V
Number:
1 N-channel
Input Capacitance(Ciss):
5.85nF@15V
Pd - Power Dissipation:
187W
Gate Charge(Qg):
56.9nC@4.5V
Mfr. Part #:
HSP3018B
Package:
TO-220FB-3L
Product Description

Product Overview

The HSP3018B is a high cell density trenched N-channel MOSFET designed for synchronous buck converter applications. It offers excellent RDS(ON) and gate charge characteristics, meeting RoHS and Green Product requirements. This device is 100% EAS guaranteed with full function reliability approval, making it suitable for applications requiring fast switching and low power loss.

Product Attributes

  • Brand: HS-Semi
  • Product Type: N-Ch Fast Switching MOSFETs
  • Certifications: RoHS, Green Product
  • Reliability: 100% EAS Guaranteed
  • Technology: Advanced high cell density Trench technology

Technical Specifications

Model Parameter Conditions Min. Typ. Max. Units
HSP3018B Drain-Source Voltage (VDS) 30 V
Gate-Source Voltage (VGS) 20 V
Continuous Drain Current, VGS @ 10V TC=25 205 A
Continuous Drain Current, VGS @ 10V TC=100 145 A
Pulsed Drain Current (IDM) 500 A
Single Pulse Avalanche Energy (EAS) 246 mJ
Avalanche Current (IAS) 70.2 A
Total Power Dissipation (PD) TC=25 187 W
Storage Temperature Range (TSTG) -55 150
Operating Junction Temperature Range (TJ) -55 150
Thermal Resistance Junction-Ambient (RJA) --- 62 /W
Thermal Resistance Junction-Case (RJC) --- 0.8 /W
HSP3018B Drain-Source Breakdown Voltage (BVDSS) VGS=0V , ID=250uA 30 --- --- V
Static Drain-Source On-Resistance (RDS(ON)) VGS=10V , ID=30A --- 2 2.4 m
Static Drain-Source On-Resistance (RDS(ON)) VGS=4.5V , ID=15A --- 2.6 3.2 m
Gate Threshold Voltage (VGS(th)) VGS=VDS , ID =250uA 1.2 --- 2.5 V
Drain-Source Leakage Current (IDSS) VDS=24V , VGS=0V , TJ=25 --- --- 1 uA
Drain-Source Leakage Current (IDSS) VDS=24V , VGS=0V , TJ=55 --- --- 5 uA
Gate-Source Leakage Current (IGSS) VGS=20V , VDS=0V --- --- 100 nA
Forward Transconductance (gfs) VDS=5V , ID=30A --- 50 --- S
Gate Resistance (Rg) VDS=0V , VGS=0V , f=1MHz --- 1.7 ---
Total Gate Charge (Qg) VDS=15V , VGS=10V , ID=15A --- 56.9 --- nC
Gate-Source Charge (Qgs) --- 13.8 --- nC
Gate-Drain Charge (Qgd) --- 23.5 --- nC
Input Capacitance (Ciss) VDS=15V , VGS=0V , f=1MHz --- 5850 --- pF
HSP3018B Continuous Source Current (IS) VG=VD=0V , Force Current --- 205 A
Diode Forward Voltage (VSD) VGS=0V , IS=1A , TJ=25 --- --- 1.2 V
Package Limitation Current 85 A

2410121448_HUASHUO-HSP3018B_C701024.pdf
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