High cell density trenched MOSFET HUASHUO HSM4410 designed for synchronous buck converter performance
Key Attributes
Model Number:
HSM4410
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
12A
Operating Temperature -:
-55℃~+150℃
RDS(on):
9.5mΩ@10V,12A
Gate Threshold Voltage (Vgs(th)):
1.5V
Reverse Transfer Capacitance (Crss@Vds):
170pF@15V
Number:
1 N-channel
Input Capacitance(Ciss):
950pF@15V
Pd - Power Dissipation:
2.5W
Gate Charge(Qg):
11nC@4.5V
Mfr. Part #:
HSM4410
Package:
SOP-8
Product Description
Product Overview
The HSM4410 is a high cell density trenched N-channel MOSFET designed for synchronous buck converter applications. It offers excellent RDS(ON) and gate charge characteristics, meeting RoHS and Green Product requirements. This device is 100% EAS guaranteed with full function reliability approval, featuring super low gate charge, excellent CdV/dt effect decline, and advanced high cell density Trench technology.
Product Attributes
- Brand: HS-Semi
- Product Series: HSM4410
- Technology: Advanced high cell density Trench
- Certifications: RoHS, Green Product
- Reliability: 100% EAS Guaranteed
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | 30 | V | |||
| VGS | Gate-Source Voltage | ±20 | ±20 | V | ||
| ID@TA=25 | Continuous Drain Current, VGS @ 10V1 | 12 | A | |||
| ID@TA=70 | Continuous Drain Current, VGS @ 10V1 | 8 | A | |||
| IDM | Pulsed Drain Current2 | 50 | A | |||
| EAS | Single Pulse Avalanche Energy3 | 51 | mJ | |||
| IAS | Avalanche Current | 32 | A | |||
| PD@TA=25 | Total Power Dissipation4 | 2.5 | W | |||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| Thermal Data | ||||||
| RJA | Thermal Resistance Junction-ambient1 | 1 | 50 | /W | ||
| RJC | Thermal Resistance Junction-Case1 | --- | 25 | /W | ||
| Electrical Characteristics (TJ=25 , unless otherwise noted) | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=250uA | 30 | --- | --- | V |
| BVDSS/TJ | BVDSS Temperature Coefficient | Reference to 25 , ID=1mA | --- | 0.027 | --- | V/ |
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=10V , ID=12A | --- | 7.5 | 9.5 | m |
| VGS=4.5V , ID=10A | --- | 12.5 | 14.5 | V | ||
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =250uA | 1 | 1.5 | 2.5 | V |
| VGS(th) | VGS(th) Temperature Coefficient | --- | -5.8 | --- | mV/ | |
| IDSS | Drain-Source Leakage Current | VDS=24V , VGS=0V , TJ=25 | --- | --- | 1 | uA |
| VDS=24V , VGS=0V , TJ=55 | --- | --- | 5 | uA | ||
| IGSS | Gate-Source Leakage Current | VGS=±20V , VDS=0V | --- | --- | ±100 | nA |
| gfs | Forward Transconductance | VDS=5V , ID=10A | --- | 5.8 | --- | S |
| Rg | Gate Resistance | VDS=0V , VGS=0V , f=1MHz | --- | 1.56 | --- | |
| Qg | Total Gate Charge (4.5V) | VDS=15V , VGS=4.5V , ID=10A | --- | 11 | --- | nC |
| Qgs | Gate-Source Charge | --- | 4.5 | --- | nC | |
| Qgd | Gate-Drain Charge | --- | 5 | --- | nC | |
| Td(on) | Turn-On Delay Time | VDD=15V , VGS=10V , RG=6 ID=10A | --- | 10 | --- | ns |
| Tr | Rise Time | --- | 6 | --- | ns | |
| Td(off) | Turn-Off Delay Time | --- | 32 | --- | ns | |
| Tf | Fall Time | --- | 7 | --- | ns | |
| Ciss | Input Capacitance | VDS=15V , VGS=0V , f=1MHz | --- | 950 | --- | pF |
| Coss | Output Capacitance | --- | 200 | --- | pF | |
| Crss | Reverse Transfer Capacitance | --- | 170 | --- | pF | |
| Diode Characteristics | ||||||
| IS | Continuous Source Current1,5 | VG=VD=0V , Force Current | --- | --- | 12 | A |
| ISM | Pulsed Source Current2,5 | --- | --- | 50 | A | |
| VSD | Diode Forward Voltage2 | VGS=0V , IS=1A , TJ=25 | --- | --- | 1.2 | V |
| trr | Reverse Recovery Time | IF=10A , dI/dt=100A/s , TJ=25 | --- | 15 | --- | nS |
| Qrr | Reverse Recovery Charge | --- | 32 | --- | nC | |
Ordering Information
| Part Number | Package Code | Packaging |
|---|---|---|
| HSM4410 | SOP-8 | 4000/Tape&Reel |
2409291036_HUASHUO-HSM4410_C508461.pdf
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