Fast Switching N Channel MOSFET HUASHUO HSP15810C Featuring Trench Technology for High Frequency Switching Circuits
Key Attributes
Model Number:
HSP15810C
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
120A
Operating Temperature -:
-55℃~+150℃
RDS(on):
5.5mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
14pF@50V
Number:
1 N-channel
Input Capacitance(Ciss):
4.725nF@50V
Pd - Power Dissipation:
227W
Gate Charge(Qg):
72nC@10V
Mfr. Part #:
HSP15810C
Package:
TO-220
Product Description
Product Overview
HSP15810C is a N-Channel, 100V Fast Switching MOSFET designed for high-frequency switching applications. It features advanced high cell density Trench technology, offering super low RDS(ON) and 100% EAS Guaranteed performance. This MOSFET is ideal for applications such as motor drivers, Battery Management Systems (BMS), and high-frequency switching with synchronous rectification. A green device option is available.Product Attributes
- Brand: HS-Semi
- Model: HSP15810C
- Technology: N-Channel, Fast Switching MOSFET, Advanced high cell density Trench technology
- Certifications: Green Device Available
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | 100 | V | |||
| VGS | Gate-Source Voltage | ±20 | V | |||
| ID@TC=25 | Continuous Drain Current, VGS @ 10V1,6 | 120 | A | |||
| ID@TC=100 | Continuous Drain Current, VGS @ 10V1,6 | 100 | A | |||
| IDM | Pulsed Drain Current2 | 480 | A | |||
| EAS | Single Pulse Avalanche Energy3 | 196 | mJ | |||
| IAS | Avalanche Current | 28 | A | |||
| PD@TC=25 | Total Power Dissipation4 | 227 | W | |||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| Thermal Data | ||||||
| RJA | Thermal Resistance Junction-Ambient | --- | 62 | /W | ||
| RJC | Thermal Resistance Junction-Case1 | --- | 0.5 | /W | ||
| Electrical Characteristics (TJ=25 , unless otherwise noted) | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=250uA | 100 | --- | --- | V |
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=10V , ID=30A | 4.7 | 5.5 | m | |
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =250uA | 2.0 | 3.0 | 4.0 | V |
| IDSS | Drain-Source Leakage Current | VDS=100V , VGS=0V , TJ=25 | --- | 1 | uA | |
| IDSS | Drain-Source Leakage Current | VDS=100V , VGS=0V , TJ=125 | --- | 10 | uA | |
| IGSS | Gate-Source Leakage Current | VGS=±20V , VDS=0V | --- | ±100 | nA | |
| gfs | Forward Transconductance | VDS=5V , ID=30A | 50 | --- | S | |
| Rg | Gate Resistance | VDS=0V , VGS=0V , f=1MHz | --- | 1 | ||
| Qg | Total Gate Charge (10V) | VDS=50V , VGS=10V , ID=20A | 72 | --- | nC | |
| Qgs | Gate-Source Charge | 28 | --- | nC | ||
| Qgd | Gate-Drain Charge | 15 | --- | nC | ||
| Td(on) | Turn-On Delay Time | VDD=50V , VGS=10V , RG=3.0, ID=20A | 35 | --- | ns | |
| Tr | Rise Time | 18 | --- | ns | ||
| Td(off) | Turn-Off Delay Time | 45 | --- | ns | ||
| Tf | Fall Time | 55 | --- | ns | ||
| Ciss | Input Capacitance | VDS=50V , VGS=0V , f=1MHz | 4725 | --- | pF | |
| Coss | Output Capacitance | 609 | --- | pF | ||
| Crss | Reverse Transfer Capacitance | 14 | --- | pF | ||
| Diode Characteristics | ||||||
| IS | Continuous Source Current1,5 | VG=VD=0V , Force Current | --- | 120 | A | |
| VSD | Diode Forward Voltage2 | VGS=0V , IS=50A , TJ=25 | --- | 1.3 | V | |
| trr | Reverse Recovery Time | IF=30A , dI/dt=100A/s , TJ=25 | 70 | --- | nS | |
| Qrr | Reverse Recovery Charge | 170 | --- | nC | ||
2410121637_HUASHUO-HSP15810C_C2828504.pdf
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