RoHS compliant N channel MOSFET HUASHUO HSSN3134 with fast switching speed and super low gate charge
Key Attributes
Model Number:
HSSN3134
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
1A
Operating Temperature -:
-55℃~+150℃
RDS(on):
200mΩ@4.5V,1A
Gate Threshold Voltage (Vgs(th)):
1.1V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
9.2pF
Number:
1 N-channel
Output Capacitance(Coss):
25pF
Input Capacitance(Ciss):
92pF
Pd - Power Dissipation:
350mW
Gate Charge(Qg):
1.6nC@4.5V
Mfr. Part #:
HSSN3134
Package:
SOT-323
Product Description
Product Overview
The HSSN3134 is a high cell density trenched N-channel MOSFET designed for excellent RDS(ON) and efficiency in small power switching and load switch applications. It features fast switching speed, super low gate charge, high-side switching capability, low threshold voltage, and is ESD protected up to 2KV. This RoHS and Green Product compliant MOSFET is approved for full function reliability.
Product Attributes
- Brand: HS-Semi
- Product Type: N-Channel MOSFET
- Certifications: RoHS, Green Product
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | 20 | V | |||
| VGS | Gate-Source Voltage | 8 | V | |||
| ID@TA=25 | Continuous Drain Current, VGS @ 4.5V1 | 1.0 | A | |||
| ID@TA=70 | Continuous Drain Current, VGS @ 4.5V1 | 0.75 | A | |||
| IDM | Pulsed Drain Current2 | 4 | A | |||
| PD@TA=25 | Total Power Dissipation3 | 0.35 | W | |||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| Thermal Data | ||||||
| RJA | Thermal Resistance Junction-ambient | 357 | /W | |||
| Electrical Characteristics (TJ=25 , unless otherwise noted) | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=250uA | 20 | V | ||
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=4.5V , ID=1000mA | 175 | 200 | m | |
| VGS=2.5V , ID=500mA | 250 | 300 | m | |||
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =250uA | 0.5 | 0.7 | 1.1 | V |
| IDSS | Drain-Source Leakage Current | VDS=20V , VGS=0V , TJ=25 | 1 | uA | ||
| VDS=20V , VGS=0V , TJ=55 | 5 | uA | ||||
| IGSS | Gate-Source Leakage Current | VGS=8V , VDS=0V | 100 | nA | ||
| Qg | Total Gate Charge (4.5V) | VDS=10V , VGS=4.5V , ID=1A | 1.6 | nC | ||
| Qgs | Gate-Source Charge | 0.1 | ||||
| Qgd | Gate-Drain Charge | 0.2 | ||||
| Td(on) | Turn-On Delay Time | VDD=10V , VGS=4.5V , RG=10, ID=1A | 5.8 | ns | ||
| Tr | Rise Time | 25 | ||||
| Td(off) | Turn-Off Delay Time | 41 | ||||
| Tf | Fall Time | 31 | ||||
| Ciss | Input Capacitance | VDS=10V , VGS=0V , f=1MHz | 92 | pF | ||
| Coss | Output Capacitance | 25 | ||||
| Crss | Reverse Transfer Capacitance | 9.2 | ||||
| Diode Characteristics | ||||||
| IS | Continuous Source Current1,4 | VG=VD=0V , Force Current | 1 | A | ||
| VSD | Diode Forward Voltage2 | VGS=0V , IS=1A , TJ=25 | 1.2 | V | ||
| Part Number | Package code | Packaging | Quantity |
|---|---|---|---|
| HSSN3134 | SOT-323 | 3000/Tape&Reel | 3000 |
2410121435_HUASHUO-HSSN3134_C845586.pdf
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