Low RDS ON 30V P channel MOSFET Huixin H4423P ideal for battery protection charge discharge circuits
Key Attributes
Model Number:
H4423P
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
34A
RDS(on):
7.4mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.58V
Reverse Transfer Capacitance (Crss@Vds):
306pF
Number:
1 P-Channel
Pd - Power Dissipation:
30W
Output Capacitance(Coss):
369pF
Input Capacitance(Ciss):
3.406nF
Gate Charge(Qg):
69.8nC@10V
Mfr. Part #:
H4423P
Package:
DFN-8-EP(3x3)
Product Description
Product Overview
The H4423P is a 30V P-CHANNEL MOSFET featuring Trench Power MOSFET technology for low RDS(ON). It is RoHS and Halogen-Free compliant and is 100% UIS and Rg tested. This MOSFET is suitable for applications such as Notebook AC-in Load Switch and Battery Protection Charge/Discharge.
Product Attributes
- Brand: H4423P
- Certifications: RoHS and Halogen-Free Complaint
- Testing: 100% UIS Tested, 100% Rg Tested
Technical Specifications
| Parameters | Symbol | Min | Typ | Max | Units | Conditions |
| Drain-Source Breakdown Voltage | BVDSS | -30 | V | ID=-250A, VGS=0V | ||
| Zero Gate Voltage Drain Current | IDSS | -1 | A | VDS=-30V, VGS=0V, TJ=55 | ||
| Gate-Body leakage current | IGSS | 20 | 100 | nA | VDS=0V, VGS= 20V | |
| Gate Threshold Voltage | VGS(th) | -1.1 | -1.58 | -2.1 | V | VDS=VGS ID=-250A |
| Static Drain-Source On-Resistance | RDS(ON) | 6 | 7.4 | m | VGS=-10V, ID=-20A | |
| Static Drain-Source On-Resistance | RDS(ON) | 9.1 | 11.3 | V | TJ=125 | |
| Static Drain-Source On-Resistance | RDS(ON) | 8.6 | 10.6 | m | VGS=-4.5V, ID=-16A | |
| Forward Trans conductance | gFS | 70 | S | VDS=-5V, ID=-20A | ||
| Diode Forward Voltage | VSD | -0.7 | -1 | V | IS=-1A,VGS=0V | |
| Maximum Body-Diode Continuous Current | IS | -34 | A | |||
| Input Capacitance | Ciss | 3406 | pF | VGS=0V, VDS=-15V, f=1MHz | ||
| Output Capacitance | Coss | 369 | pF | VGS=0V, VDS=-15V, f=1MHz | ||
| Reverse Transfer Capacitance | Crss | 306 | pF | VGS=0V, VDS=-15V, f=1MHz | ||
| Gate resistance | Rg | 4.6 | 9 | f=1MHz | ||
| Total Gate Charge | Qg | 69.8 | nC | VGS=-10V, VDS=-15V, ID=-20A | ||
| Gate Source Charge | Qgs | 13.6 | nC | VGS=-10V, VDS=-15V, ID=-20A | ||
| Gate Drain Charge | Qgd | 14 | nC | VGS=-10V, VDS=-15V, ID=-20A | ||
| Turn-On Delay Time | tD(on) | 11.3 | ns | VGS=-10V, VDS=-15V, RL=0.75, RGEN=3 | ||
| Turn-On Rise Time | tr | 71.3 | ns | VGS=-10V, VDS=-15V, RL=0.75, RGEN=3 | ||
| Turn-Off Delay Time | tD(off) | 95 | ns | VGS=-10V, VDS=-15V, RL=0.75, RGEN=3 | ||
| Turn-Off Fall Time | tf | 82 | ns | VGS=-10V, VDS=-15V, RL=0.75, RGEN=3 | ||
| Body Diode Reverse Recovery Time | trr | 15.2 | ns | IF=-20A, dI/dt=100A/s | ||
| Body Diode Reverse Recovery Charge | Qrr | 1.6 | nC | IF=-20A, dI/dt=100A/s |
2508041620_Huixin-H4423P_C49823477.pdf
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