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quality N Channel MOSFET HUASHUO HSL03N20 Trenched Technology Low Gate Charge Fast Switching Device factory
quality N Channel MOSFET HUASHUO HSL03N20 Trenched Technology Low Gate Charge Fast Switching Device factory

N Channel MOSFET HUASHUO HSL03N20 Trenched Technology Low Gate Charge Fast Switching Device

Key Attributes
Model Number: HSL03N20
Product Custom Attributes
Drain To Source Voltage:
200V
Current - Continuous Drain(Id):
1.5A
Operating Temperature -:
-55℃~+150℃
RDS(on):
600mΩ@4.5V,1A
Gate Threshold Voltage (Vgs(th)):
1.2V
Reverse Transfer Capacitance (Crss@Vds):
4.5pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
900pF@25V
Pd - Power Dissipation:
42W
Gate Charge(Qg):
15nC@10V
Mfr. Part #:
HSL03N20
Package:
SOT-223
Product Description

Product Overview

The HSL03N20 is a high cell density trenched N-channel MOSFET designed for fast switching applications. It offers excellent RDS(ON) and efficiency, making it suitable for most low-power switching and load switch applications. This MOSFET meets RoHS and Green Product requirements and has undergone full function reliability approval. Key features include super low gate charge, excellent Cdv/dt effect decline, and advanced high cell density trench technology.

Product Attributes

  • Brand: HS-Semi
  • Product Type: N-Channel MOSFET
  • Technology: Trench
  • Certifications: RoHS, Green Product

Technical Specifications

Symbol Parameter Conditions Min. Typ. Max. Unit
Absolute Maximum Ratings
VDS Drain-Source Voltage 200 V
VGS Gate-Source Voltage ±20 V
ID@TA=25 Continuous Drain Current, VGS @ 10V1 1.5 A
ID@TA=70 Continuous Drain Current, VGS @ 10V1 1.3 A
IDM Pulsed Drain Current2 8 A
PD@TA=25 Total Power Dissipation3 42 W
TSTG Storage Temperature Range -55 150
TJ Operating Junction Temperature Range -55 150
Thermal Data
RJA Thermal Resistance Junction-ambient1 --- 85 /W
RJC Thermal Resistance Junction-Case1 --- 30 /W
Electrical Characteristics (TJ=25 , unless otherwise noted)
BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250µA 200 --- --- V
RDS(ON) Static Drain-Source On-Resistance2 VGS=10V , ID=1A 0.6 1.0 Ω
VGS=4.5V , ID=1A 0.7 1.1 Ω
VGS(th) Gate Threshold Voltage VGS=VDS , ID =250µA 1.2 2 3 V
IDSS Drain-Source Leakage Current VDS=200V , VGS=0V , TJ=25℃ --- 1 µA
VDS=200V , VGS=0V , TJ=55℃ --- 5 µA
IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- ±100 nA
gfs Forward Transconductance VDS=10V , ID=1A 10 --- S
Qg Total Gate Charge (10V) VDS=160V , VGS=10V , ID=1A 15 --- nC
Qgs Gate-Source Charge 2.9 ---
Qgd Gate-Drain Charge 5 ---
td(on) Turn-On Delay Time VDD=100V , VGS=10V , RG=3Ω
ID=1A		 22 --- ns
tr Rise Time 30 ---
td(off) Turn-Off Delay Time 44 ---
tf Fall Time 12 ---
Ciss Input Capacitance VDS=25V , VGS=0V , f=1MHz 900 --- pF
Coss Output Capacitance 125 ---
Crss Reverse Transfer Capacitance 4.5 ---
Diode Characteristics
IS Continuous Source Current1,4 VG=VD=0V , Force Current --- 1 A
VSD Diode Forward Voltage2 VGS=0V , IS=1A , TJ=25℃ --- 1 V
trr Reverse Recovery Time IF=1A , dI/dt=100A/µs , TJ=25℃ 85 --- nS
Qrr Reverse Recovery Charge 250 --- nC
Ordering Information
Part Number Package Code Packaging
HSL03N20 SOT-223 3000/Tape&Reel

2410121434_HUASHUO-HSL03N20_C700961.pdf
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