Fast Switching N Channel MOSFET HUASHUO HSU6004 with Excellent RDS ON and Gate Charge Characteristics
Key Attributes
Model Number:
HSU6004
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
23A
Operating Temperature -:
-55℃~+150℃
RDS(on):
30mΩ@10V,15A
Gate Threshold Voltage (Vgs(th)):
1.2V
Reverse Transfer Capacitance (Crss@Vds):
64pF@48V
Number:
1 N-channel
Input Capacitance(Ciss):
1.378nF@48V
Pd - Power Dissipation:
34.7W
Gate Charge(Qg):
12.6nC@4.5V
Mfr. Part #:
HSU6004
Package:
TO-252-2
Product Description
Product Overview
The HSU6004 is a high cell density trenched N-channel MOSFET designed for fast switching applications, particularly in synchronous buck converters. It offers excellent RDS(ON) and gate charge characteristics. This component meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approval. Key advantages include super low gate charge, excellent CdV/dt effect decline, and advanced high cell density trench technology.
Product Attributes
- Brand: HS-Semi
- Product Type: N-Ch 60V Fast Switching MOSFETs
- Certifications: RoHS, Green Device Available
- Reliability: 100% EAS Guaranteed
Technical Specifications
| Model | Parameter | Conditions | Min. | Typ. | Max. | Unit | |
|---|---|---|---|---|---|---|---|
| HSU6004 | Drain-Source Voltage (VDS) | 60 | V | ||||
| Gate-Source Voltage (VGS) | ±20 | V | |||||
| Continuous Drain Current (ID@TC=25) | VGS @ 10V | 23 | A | ||||
| Continuous Drain Current (ID@TC=100) | VGS @ 10V | 15 | A | ||||
| Continuous Drain Current (ID@TA=25) | VGS @ 10V | 5.6 | A | ||||
| Continuous Drain Current (ID@TA=70) | VGS @ 10V | 4.5 | A | ||||
| Pulsed Drain Current (IDM) | 46 | A | |||||
| Single Pulse Avalanche Energy (EAS) | 25.5 | mJ | |||||
| Avalanche Current (IAS) | 22.6 | A | |||||
| Total Power Dissipation (PD@TC=25) | 34.7 | W | |||||
| Total Power Dissipation (PD@TA=25) | 2 | W | |||||
| Storage Temperature Range (TSTG) | -55 | 150 | |||||
| Operating Junction Temperature Range (TJ) | -55 | 150 | |||||
| Thermal Resistance Junction-Ambient (RJA) | --- | 62 | /W | ||||
| Thermal Resistance Junction-Case (RJC) | --- | 3.6 | /W | ||||
| HSU6004 | Drain-Source Breakdown Voltage (BVDSS) | VGS=0V , ID=250uA | 60 | --- | --- | V | |
| BVDSS Temperature Coefficient | Reference to 25 , ID=1mA | --- | 0.063 | --- | V/ | ||
| Static Drain-Source On-Resistance (RDS(ON),max) | VGS=10V , ID=15A | --- | 25 | 30 | m | ||
| Static Drain-Source On-Resistance (RDS(ON),max) | VGS=4.5V , ID=10A | --- | 30 | 38 | m | ||
| Gate Threshold Voltage (VGS(th)) | VGS=VDS , ID =250uA | 1.2 | --- | 2.5 | V | ||
| VGS(th) Temperature Coefficient | --- | -5.24 | --- | mV/ | |||
| Drain-Source Leakage Current (IDSS) | VDS=48V , VGS=0V , TJ=25 | --- | --- | 1 | uA | ||
| Drain-Source Leakage Current (IDSS) | VDS=48V , VGS=0V , TJ=55 | --- | --- | 5 | uA | ||
| Gate-Source Leakage Current (IGSS) | VGS=±20V , VDS=0V | --- | --- | ±100 | nA | ||
| Forward Transconductance (gfs) | VDS=5V , ID=15A | --- | 17 | --- | S | ||
| Total Gate Charge (Qg) | VDS=48V , VGS=4.5V , ID=12A | --- | 12.6 | --- | nC | ||
| Input Capacitance (Ciss) | VDS=15V , VGS=0V , f=1MHz | --- | 1378 | --- | pF | ||
| Output Capacitance (Coss) | --- | 86 | --- | pF | |||
| HSU6004 | Reverse Transfer Capacitance (Crss) | --- | 64 | --- | pF | ||
| Diode Forward Voltage (VSD) | VGS=0V , IS=1A , TJ=25 | --- | --- | 1.2 | V |
| Package | Packaging | Quantity |
|---|---|---|
| TO252-2 | Tape&Reel | 2500 |
2409291134_HUASHUO-HSU6004_C518783.pdf
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