Trench technology N channel MOSFET HUASHUO HSP18N20 providing and low gate charge in power circuits
Key Attributes
Model Number:
HSP18N20
Product Custom Attributes
Drain To Source Voltage:
200V
Current - Continuous Drain(Id):
18A
Operating Temperature -:
-55℃~+150℃
RDS(on):
170mΩ@10V,9A
Gate Threshold Voltage (Vgs(th)):
2.5V
Reverse Transfer Capacitance (Crss@Vds):
70pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
2.047nF@25V
Pd - Power Dissipation:
83W
Gate Charge(Qg):
45nC@10V
Mfr. Part #:
HSP18N20
Package:
TO-220
Product Description
Product Overview
The HSP18N20 is a high-performance N-channel MOSFET featuring an extreme high cell density trench technology. It offers excellent RDS(ON) and gate charge characteristics, making it ideal for synchronous buck converter applications. This device meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approval. Key advantages include super low gate charge, excellent Cdv/dt effect decline, and advanced high cell density trench technology.Product Attributes
- Brand: HS (implied by www.hs-semi.cn)
- Type: N-Ch MOSFET
- Technology: Trench
- Certifications: RoHS, Green Device Available
- Reliability: 100% EAS guaranteed, full function reliability approved
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | 200 | V | |||
| VGS | Gate-Source Voltage | 20 | V | |||
| ID@TC=25 | Continuous Drain Current, VGS @ 10V1 | 18 | A | |||
| ID@TC=100 | Continuous Drain Current, VGS @ 10V1 | 11.7 | A | |||
| IDM | Pulsed Drain Current2 | 40 | A | |||
| EAS | Single Pulse Avalanche Energy3 | 15 | mJ | |||
| IAS | Avalanche Current | 10 | A | |||
| PD@TC=25 | Total Power Dissipation3 | 83 | W | |||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| Thermal Data | ||||||
| RJA | Thermal Resistance Junction-ambient | --- | 60 | /W | ||
| RJC | Thermal Resistance Junction-Case1 | --- | 1.1 | /W | ||
| Product Summary | ||||||
| Model | HSP18N20 | |||||
| Type | N-Ch 200V Fast Switching MOSFETs | |||||
| VDS | 200 | V | ||||
| RDS(ON),max | VGS=10V | 170 | m | |||
| ID | @TC=25 | 18 | A | |||
| Electrical Characteristics (TJ=25 , unless otherwise noted) | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=250uA | 200 | --- | --- | V |
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=10V , ID=9A | --- | 170 | m | |
| VGS=4.5V , ID=9A | --- | 180 | m | |||
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =250uA | 1.2 | --- | 2.5 | V |
| IDSS | Drain-Source Leakage Current | VDS=160V , VGS=0V , TJ=25 | --- | 1 | uA | |
| VDS=160V , VGS=0V , TJ=55 | --- | 5 | uA | |||
| IGSS | Gate-Source Leakage Current | VGS=20V , VDS=0V | --- | 100 | nA | |
| gfs | Forward Transconductance | VDS=5V , ID=9A | 22 | --- | S | |
| Rg | Gate Resistance | VDS=0V , VGS=0V , f=1MHz | --- | 2 | ||
| Qg | Total Gate Charge (10V) | VDS=80V , VGS=10V , ID=9A | 45 | --- | nC | |
| Qgs | Gate-Source Charge | 9 | --- | |||
| Qgd | Gate-Drain Charge | 10.5 | --- | |||
| td(on) | Turn-On Delay Time | VDD=50V , VGS=10V , RG=3.3, ID=9A | 13 | --- | ns | |
| tr | Rise Time | 8.2 | --- | ns | ||
| td(off) | Turn-Off Delay Time | 25 | --- | ns | ||
| tf | Fall Time | 11 | --- | ns | ||
| Ciss | Input Capacitance | VDS=25V , VGS=0V , f=1MHz | 2047 | --- | pF | |
| Coss | Output Capacitance | 109 | --- | pF | ||
| Crss | Reverse Transfer Capacitance | 70 | --- | pF | ||
| Diode Characteristics | ||||||
| IS | Continuous Source Current1,5 | VG=VD=0V , Force Current | --- | 18 | A | |
| ISM | Pulsed Source Current2,5 | --- | 40 | A | ||
| VSD | Diode Forward Voltage2 | VGS=0V , IS=1A , TJ=25 | --- | 1.2 | V | |
| trr | Reverse Recovery Time | IF=10A , dI/dt=100A/s , TJ=25 | 37 | --- | ns | |
| Qrr | Reverse Recovery Charge | 103 | --- | nC | ||
2409291036_HUASHUO-HSP18N20_C508807.pdf
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