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quality p channel mosfet 60 volt HUASHUO HSP6113 featuring low gate charge and high cell density trench technology factory
quality p channel mosfet 60 volt HUASHUO HSP6113 featuring low gate charge and high cell density trench technology factory

p channel mosfet 60 volt HUASHUO HSP6113 featuring low gate charge and high cell density trench technology

Key Attributes
Model Number: HSP6113
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
17A
Operating Temperature -:
-55℃~+150℃
RDS(on):
90mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
50pF
Number:
1 P-Channel
Output Capacitance(Coss):
73pF
Input Capacitance(Ciss):
1.08nF
Pd - Power Dissipation:
52.1W
Gate Charge(Qg):
11.8nC@4.5V
Mfr. Part #:
HSP6113
Package:
TO-220FB-3L
Product Description

Product Overview

The HSP6113 is a P-channel, 60V fast-switching MOSFET designed with high cell density trench technology. It offers excellent RDS(ON) and low gate charge, making it suitable for synchronous buck converter applications. This MOSFET meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approval. Key advantages include super low gate charge and excellent Cdv/dt effect decline.

Product Attributes

  • Brand: HS-Semi
  • Product Type: P-Channel MOSFET
  • Voltage Rating: 60V
  • Certifications: RoHS, Green Product
  • Reliability: 100% EAS Guaranteed

Technical Specifications

Model Parameter Conditions Min. Typ. Max. Unit
HSP6113 VDS Drain-Source Voltage -60 V
VGS Gate-Source Voltage ±20 V
ID@TC=25 Continuous Drain Current, VGS @ -10V -17 A
ID@TC=100 Continuous Drain Current, VGS @ -10V -11 A
ID@TA=25 Continuous Drain Current, VGS @ -10V -3.3 A
ID@TA=70 Continuous Drain Current, VGS @ -10V -2.6 A
IDM Pulsed Drain Current -34 A
EAS Single Pulse Avalanche Energy 30 mJ
IAS Avalanche Current 24.4 A
PD@TC=25 Total Power Dissipation 52.1 W
PD@TA=25 Total Power Dissipation 2 W
TSTG Storage Temperature Range -55 150
TJ Operating Junction Temperature Range -55 150
HSP6113 RJA Thermal Resistance Junction-Ambient 62 /W
RJC Thermal Resistance Junction-Case 2.4 /W
BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=-250uA -60 V
RDS(ON) Static Drain-Source On-Resistance VGS=-10V , ID=-12A 90 m
VGS=-4.5V , ID=-6A 132 m
VGS(th) Gate Threshold Voltage VGS=VDS , ID =-250uA -1.0 -2.5 V
IDSS Drain-Source Leakage Current VDS=-48V , VGS=0V , TJ=25 1 uA
HSP6113 Qg Total Gate Charge VDS=-12V , VGS=-4.5V , ID=-6A 11.8 nC
Ciss Input Capacitance VDS=-15V , VGS=0V , f=1MHz 1080 pF
Coss Output Capacitance VDS=-15V , VGS=0V , f=1MHz 73 pF
HSP6113 Crss Reverse Transfer Capacitance VDS=-15V , VGS=0V , f=1MHz 50 pF
VSD Diode Forward Voltage VGS=0V , IS=-1A , TJ=25 -1 V

2410121455_HUASHUO-HSP6113_C2903571.pdf
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