Fast Switching Dual N Channel MOSFET HUASHUO HSW6800 Designed for Small Power Load Switch Applications
Key Attributes
Model Number:
HSW6800
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
4A
Operating Temperature -:
-55℃~+150℃
RDS(on):
45mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
73pF@15V
Number:
2 N-Channel
Input Capacitance(Ciss):
880pF@15V
Pd - Power Dissipation:
1.4W
Gate Charge(Qg):
9.5nC@4.5V
Mfr. Part #:
HSW6800
Package:
SOT-23-6L
Product Description
Product Overview
The HSW6800 is a dual N-channel fast switching MOSFET featuring high cell density trench technology. It offers excellent RDS(ON) and efficiency, making it ideal for various small power switching and load switch applications. This product meets RoHS and Green Product requirements and is available as a green device. Key advantages include super low gate charge and excellent Cdv/dt effect decline.
Product Attributes
- Brand: HS-Semi
- Model: HSW6800
- Technology: Trench MOSFET
- Channel Type: Dual N-Channel
- Switching Speed: Fast
- Certifications: RoHS, Green Product
- Package: SOT23-6L
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | 30 | V | |||
| VGS | Gate-Source Voltage | 12 | V | |||
| ID@TA=25 | Continuous Drain Current, VGS @ 4.5V1 | 4 | A | |||
| ID@TA=70 | Continuous Drain Current, VGS @ 4.5V1 | 3 | A | |||
| IDM | Pulsed Drain Current2 | 16 | A | |||
| PD@TA=25 | Total Power Dissipation3 | 1.4 | W | |||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| Thermal Data | ||||||
| RJA | Thermal Resistance Junction-ambient | 90 | /W | |||
| Electrical Characteristics (TJ=25 , unless otherwise noted) | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=250uA | 30 | V | ||
| BVDSS/TJ | BVDSS Temperature Coefficient | Reference to 25 , ID=1mA | 0.029 | V/ | ||
| RDS(ON),max | Static Drain-Source On-Resistance2 | VGS=4.5V , ID=4A | 32 | 45 | m | |
| VGS=2.5V , ID=3A | 45 | 60 | m | |||
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =250uA | 0.6 | 0.9 | 1.3 | V |
| VGS(th)/TJ | VGS(th) Temperature Coefficient | -2.82 | mV/ | |||
| IDSS | Drain-Source Leakage Current | VDS=24V , VGS=0V , TJ=25 | 1 | uA | ||
| VDS=24V , VGS=0V , TJ=55 | 5 | uA | ||||
| IGSS | Gate-Source Leakage Current | VGS=12V , VDS=0V | 100 | nA | ||
| gfs | Forward Transconductance | VDS=5V , ID=2A | 5 | S | ||
| Qg | Total Gate Charge (4.5V) | VDS=15V , VGS=4.5V , ID=4A | 9.5 | nC | ||
| Qgs | Gate-Source Charge | 1.6 | nC | |||
| Qgd | Gate-Drain Charge | 3 | nC | |||
| td(on) | Turn-On Delay Time | VDD=15V , VGS=4.5V , RG=3.3, ID=3A | 3.2 | ns | ||
| tr | Rise Time | 4.9 | ns | |||
| td(off) | Turn-Off Delay Time | 22 | ns | |||
| tf | Fall Time | 4 | ns | |||
| Ciss | Input Capacitance | VDS=15V , VGS=0V , f=1MHz | 880 | pF | ||
| Coss | Output Capacitance | 99 | pF | |||
| Cr | Reverse Transfer Capacitance | 73 | pF | |||
| Diode Characteristics | ||||||
| IS | Continuous Source Current1,4 | VG=VD=0V , Force Current | 4 | A | ||
| ISM | Pulsed Source Current2,4 | 16 | A | |||
| VSD | Diode Forward Voltage2 | VGS=0V , IS=1A , TJ=25 | 1.2 | V | ||
Notes:
1 The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2 The data tested by pulsed, pulse width 300s, duty cycle 2%.
3 The power dissipation is limited by 150 junction temperature.
4 The data is theoretically the same as ID and IDM, in real applications, should be limited by total power dissipation.
2410121653_HUASHUO-HSW6800_C2828481.pdf
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