2N7002 HXY MOSFET N Channel Device with Excellent RDS ON and Gate Voltage Operation Starting at 4.5V
Key Attributes
Model Number:
2N7002-HXY
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
300mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
2Ω@10V,0.1A
Gate Threshold Voltage (Vgs(th)):
1.9V
Reverse Transfer Capacitance (Crss@Vds):
4.2pF
Number:
1 N-channel
Pd - Power Dissipation:
350mW
Input Capacitance(Ciss):
50pF
Gate Charge(Qg):
3nC@4.5V
Mfr. Part #:
2N7002-HXY
Package:
SOT-23
Product Description
Product Overview
The 2N7002-HXY is an N-Channel Enhancement Mode MOSFET utilizing advanced trench technology. It offers excellent RDS(ON), low gate charge, and can operate with gate voltages as low as 4.5V. This device is suitable for battery protection and other switching applications.
Product Attributes
- Brand: HUAXUANYANG ELECTRONICS CO.,LTD
- Origin: Shenzhen
- Model: 2N7002-HXY
- Package: SOT-23
- Marking: 72K/7002
- Website: www.hxymos.com
Technical Specifications
| Parameter | Symbol | Condition | Min | Typ | Max | Unit |
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250A | 60 | 68 | - | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=60V,VGS=0V | - | - | 1 | A |
| Gate-Body Leakage Current | IGSS | VGS=10V,VDS=0V | - | 100 | 500 | nA |
| Gate-Body Leakage Current | IGSS | VGS=20V,VDS=0V | - | 4 | 10 | uA |
| Gate Threshold Voltage | VGS(th) | VDS=VGS,ID=250A | 0.7 | 1.2 | 1.9 | V |
| Drain-Source On-State Resistance | RDS(ON) | VGS=5V, ID=0.1A | - | 1.3 | 3 | |
| Drain-Source On-State Resistance | RDS(ON) | VGS=10V, ID=0.1A | - | 1 | 2 | |
| Forward Transconductance | gFS | VDS=10V,ID=0.2A | 0.1 | - | - | S |
| Input Capacitance | Clss | VDS=25V,VGS=0V, F=1.0MHz | - | 21 | 50 | PF |
| Output Capacitance | Coss | VDS=25V,VGS=0V, F=1.0MHz | - | 11 | 25 | PF |
| Reverse Transfer Capacitance | Crss | VDS=25V,VGS=0V, F=1.0MHz | - | 4.2 | 5 | PF |
| Turn-on Delay Time | td(on) | VDD=30V,ID=0.2A VGS=10V,RGEN=10 | - | 10 | - | nS |
| Turn-on Rise Time | tr | VDD=30V,ID=0.2A VGS=10V,RGEN=10 | - | 50 | - | nS |
| Turn-Off Delay Time | td(off) | VDD=30V,ID=0.2A VGS=10V,RGEN=10 | - | 17 | - | nS |
| Turn-Off Fall Time | tf | VDD=30V,ID=0.2A VGS=10V,RGEN=10 | - | 10 | - | nS |
| Total Gate Charge | Qg | VDS=10V,ID=0.3A, VGS=4.5V | - | 1.7 | 3 | nC |
| Diode Forward Voltage | VSD | VGS=0V,IS=0.2A | - | - | 1.2 | V |
| Diode Forward Current | IS | VGS=0V,IS=0.2A | - | - | 0.3 | A |
| Drain-Source Voltage | VDS | - | - | 60 | V | |
| Gate-Source Voltage | VGS | - | - | 20 | V | |
| Continuous Drain Current | ID | TA =25 (TJ =150) | - | 0.3 | - | A |
| Continuous Drain Current | ID | TA =100 | - | 0.19 | - | A |
| Drain Current-Pulsed | IDM | (Note 1) | - | - | 0.8 | A |
| Maximum Power Dissipation | PD | - | - | 0.35 | W | |
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | - | 150 | ||
| Thermal Resistance,Junction-to-Ambient | RJA | (Note 2) | - | 350 | - | /W |
2509181601_HXY-MOSFET-2N7002-HXY_C4748728.pdf
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