switching P channel MOSFET HUASHUO BSS84 with excellent C dv dt effect and 100 percent EAS guaranteed
Key Attributes
Model Number:
BSS84
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
300mA
Operating Temperature -:
-40℃~+150℃
RDS(on):
6Ω@4.5V,0.1A
Gate Threshold Voltage (Vgs(th)):
2.5V
Reverse Transfer Capacitance (Crss@Vds):
9pF@25V
Number:
1 P-Channel
Input Capacitance(Ciss):
170pF@25V
Pd - Power Dissipation:
350mW
Gate Charge(Qg):
1.8nC@4.5V
Mfr. Part #:
BSS84
Package:
SOT-23
Product Description
Product Overview
The BSS84 is a P-channel, 60V fast-switching MOSFET featuring high cell density trench technology. It offers excellent RDS(ON) and efficiency, making it suitable for most low-power switching and load switch applications. This device meets RoHS and Green Product requirements and is 100% EAS guaranteed. Key advantages include super low gate charge and excellent Cdv/dt effect decline.
Product Attributes
- Brand: HS-Semi (implied from URL)
- Channel Type: P-Channel
- Technology: Trench MOSFET
- Certifications: RoHS, Green Product
- EAS Guaranteed: 100%
- Package: SOT-23
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | -60 | V | |||
| VGS | Gate-Source Voltage | ±20 | V | |||
| ID@TA=25 | Continuous Drain Current, VGS @ -10V1 | -0.3 | A | |||
| ID@TA=100 | Continuous Drain Current, VGS @ -10V1 | -0.24 | A | |||
| IDM | Pulsed Drain Current2 | -1 | A | |||
| PD@TA=25 | Total Power Dissipation3 | 0.35 | W | |||
| TSTG | Storage Temperature Range | -40 | 150 | |||
| TJ | Operating Junction Temperature Range | -40 | 150 | |||
| Thermal Data | ||||||
| RJA | Thermal Resistance Junction-Ambient | --- | 400 | /W | ||
| Electrical Characteristics (TJ=25 , unless otherwise noted) | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=-250uA | -60 | --- | --- | V |
| ΔBVDSS/ΔTJ | BVDSS Temperature Coefficient | Reference to 25 , ID=-1mA | -0.021 | --- | V/ | |
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=-10V , ID=-0.2A | 4 | 6 | Ω | |
| VGS=-4.5V , ID=-0.1A | 4.5 | 7 | Ω | |||
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =-250uA | -1.0 | --- | -2.5 | V |
| ΔVGS(th)/ΔTJ | VGS(th) Temperature Coefficient | 4.08 | --- | mV/ | ||
| IDSS | Drain-Source Leakage Current | VDS=-48V , VGS=0V , TJ=25 | --- | 1 | uA | |
| VDS=-48V , VGS=0V , TJ=55 | --- | 10 | uA | |||
| IGSS | Gate-Source Leakage Current | VGS=±20V , VDS=0V | --- | ±100 | nA | |
| gfs | Forward Transconductance | VDS=-20V , ID=-0.2A | 0.18 | --- | S | |
| Qg | Total Gate Charge (-4.5V) | VDS=-20V , VGS=-10V , ID=-0.2A | 1.8 | --- | nC | |
| Qgs | Gate-Source Charge | 0.5 | --- | nC | ||
| Qgd | Gate-Drain Charge | 0.8 | --- | nC | ||
| td(on) | Turn-On Delay Time | VDS=-15V , VGS=-10V , RG=50Ω, ID=-0.2A | 2.8 | --- | ns | |
| tr | Rise Time | 1 | --- | ns | ||
| td(off) | Turn-Off Delay Time | 19 | --- | ns | ||
| tf | Fall Time | 9 | --- | ns | ||
| Ciss | Input Capacitance | VDS=-25V , VGS=0V , f=1MHz | 170 | --- | pF | |
| Coss | Output Capacitance | 53 | --- | pF | ||
| Crss | Reverse Transfer Capacitance | 9 | --- | pF | ||
| Diode Characteristics | ||||||
| IS | Continuous Source Current1,4 | VG=VD=0V , Force Current | --- | -0.3 | A | |
| ISM | Pulsed Source Current2,4 | --- | -1 | A | ||
| VSD | Diode Forward Voltage2 | VGS=0V , IS=-1A , TJ=25 | --- | -1.2 | V | |
| Ordering Information | ||||||
| Part Number | Package code | Packaging | ||||
| BSS84 | SOT-23 | 3000/Tape&Reel | ||||
2410121434_HUASHUO-BSS84_C700951.pdf
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