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quality HXY MOSFET AON7401 HXY P Channel MOSFET Featuring Low Gate Charge and Operation at 4.5V Gate Voltage factory
quality HXY MOSFET AON7401 HXY P Channel MOSFET Featuring Low Gate Charge and Operation at 4.5V Gate Voltage factory

HXY MOSFET AON7401 HXY P Channel MOSFET Featuring Low Gate Charge and Operation at 4.5V Gate Voltage

Key Attributes
Model Number: AON7401-HXY
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
50A
Operating Temperature -:
-55℃~+150℃
RDS(on):
15mΩ@10V,10A
Gate Threshold Voltage (Vgs(th)):
1.5V
Reverse Transfer Capacitance (Crss@Vds):
180pF@15V
Number:
1 P-Channel
Pd - Power Dissipation:
3W
Input Capacitance(Ciss):
1.75nF@15V
Gate Charge(Qg):
24nC@10V
Mfr. Part #:
AON7401-HXY
Package:
DFN5x6-8L
Product Description

Product Overview

The AON7401-HXY is a P-Channel Enhancement Mode MOSFET featuring excellent RDS(ON), low gate charge, and operation with gate voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications, offering high power and current handling capability.

Product Attributes

  • Brand: HUAXUANYANG HXY
  • Origin: Shenzhen HuaXuanYang Electronics CO.,LTD
  • Product ID: AON7401-HXY
  • Pack Marking: 50P03 xxx yyyy
  • Package: DFN5X6-8L
  • Certifications: Lead free product is acquired

Technical Specifications

ParameterSymbolConditionMinTypMaxUnit
Drain-Source Breakdown VoltageBVDSSVGS=0V, ID=-250A-30-33-V
VGS=0V, ID=-250A-30-33-V
Zero Gate Voltage Drain CurrentIDSSVDS=-30V,VGS=0V---1A
VDS=-30V,VGS=0V---1A
Gate-Body Leakage CurrentIGSSVGS=20V,VDS=0V--100nA
VGS=20V,VDS=0V--100nA
Gate Threshold VoltageVGS(th)VDS=VGS,ID=-250A-1-1.5-3V
VDS=VGS,ID=-250A-1-1.5-3V
Drain-Source On-State ResistanceRDS(ON)VGS=-10V, ID=-10A-915m
VGS=-4.5V, ID=-7A-1825m
Forward TransconductancegFSVDS=-10V,ID=-10A-20-S
Input CapacitanceClssVDS=-15V,VGS=0V, F=1.0MHz-1750-PF
Output CapacitanceCossVDS=-15V,VGS=0V, F=1.0MHz-215-PF
Reverse Transfer CapacitanceCrssVDS=-15V,VGS=0V, F=1.0MHz-180-PF
Turn-on Delay Timetd(on)VDD=-15V, ID=-10A, VGS=-10V,RGEN=1-9-nS
Turn-on Rise TimetrVDD=-15V, ID=-10A, VGS=-10V,RGEN=1-8-nS
Turn-Off Delay Timetd(off)VDD=-15V, ID=-10A, VGS=-10V,RGEN=1-28-nS
Turn-Off Fall TimetfVDD=-15V, ID=-10A, VGS=-10V,RGEN=1-10-nS
Total Gate ChargeQgVDS=-15V,ID=-10A,VGS=- 10V-24-nC
Gate-Source ChargeQgsVDS=-15V,ID=-10A,VGS=- 10V-3.5-nC
Gate-Drain ChargeQgVDS=-15V,ID=-10A,VGS=- 10V-6-nC
Diode Forward CurrentISNote 2---12A
Diode Forward VoltageVSDVGS=0V,IS=-12A, Pulse Test---1.2V
Absolute Maximum RatingsVDSTA=25unless otherwise noted-30--V
VGSTA=25unless otherwise noted-20-V
IDTC=25-50--A
Drain Current-ContinuousIDTC=100-24--A
Drain Current-PulsedIDMNote 1-80--A
Maximum Power DissipationPDTC=25-3-W
TC=100-1.3-W
Single pulse avalanche energyEASNote 5231--mJ
Operating Junction and Storage Temperature RangeTJ,TSTG-55-150
Thermal Resistance,Junction-to-AmbientRJANote 2-41.67-/W

2509181602_HXY-MOSFET-AON7401-HXY_C5148678.pdf

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