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quality N channel MOSFET HUASHUO HSBA6016 featuring 100 percent EAS guaranteed reliability and trench design factory
quality N channel MOSFET HUASHUO HSBA6016 featuring 100 percent EAS guaranteed reliability and trench design factory

N channel MOSFET HUASHUO HSBA6016 featuring 100 percent EAS guaranteed reliability and trench design

Key Attributes
Model Number: HSBA6016
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
52A
Operating Temperature -:
-55℃~+150℃
RDS(on):
12mΩ@10V,30A
Gate Threshold Voltage (Vgs(th)):
1.2V
Reverse Transfer Capacitance (Crss@Vds):
146pF@15V
Number:
1 N-channel
Input Capacitance(Ciss):
3.24nF@15V
Pd - Power Dissipation:
62.5W
Gate Charge(Qg):
53.3nC@4.5V
Mfr. Part #:
HSBA6016
Package:
PRPAK5x6-8L
Product Description

Product Overview

The HSBA6016 is a high cell density trenched N-channel MOSFET designed for synchronous buck converter applications. It offers excellent RDS(ON) and gate charge, meeting RoHS and Green Product requirements. This device is 100% EAS guaranteed with full function reliability approval, providing super low gate charge and excellent CdV/dt effect decline through advanced high cell density Trench technology.

Product Attributes

  • Brand: HS-Semi
  • Product Type: N-channel MOSFET
  • Technology: Advanced high cell density Trench
  • Certifications: RoHS, Green Product
  • Reliability: 100% EAS Guaranteed

Technical Specifications

Symbol Parameter Conditions Min. Typ. Max. Unit
Absolute Maximum Ratings
VDS Drain-Source Voltage 60 V
VGS Gate-Source Voltage 20 V
ID@TC=25 Continuous Drain Current, VGS @ 10V1 52 A
ID@TC=70 Continuous Drain Current, VGS @ 10V1 41 A
IDM Pulsed Drain Current2 120 A
EAS Single Pulse Avalanche Energy3 72.2 mJ
IAS Avalanche Current 38 A
PD@TC=25 Total Power Dissipation4 62.5 W
TSTG Storage Temperature Range -55 150
TJ Operating Junction Temperature Range -55 150
Thermal Data
RJA Thermal Resistance Junction-Ambient --- 62 /W
RJC Thermal Resistance Junction-Case1 --- 2 /W
Electrical Characteristics (TJ=25 , unless otherwise noted)
BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA 60 --- --- V
RDS(ON),max Static Drain-Source On-Resistance2 VGS=10V , ID=30A --- 12 m
RDS(ON),max Static Drain-Source On-Resistance2 VGS=4.5V , ID=15A --- 15 m
VGS(th) Gate Threshold Voltage VGS=VDS , ID =250uA 1.2 --- 2.5 V
IDSS Drain-Source Leakage Current VDS=48V , VGS=0V , TJ=25 --- 1 uA
IDSS Drain-Source Leakage Current VDS=48V , VGS=0V , TJ=55 --- 5 uA
IGSS Gate-Source Leakage Current VGS=20V , VDS=0V --- 100 nA
Qg Total Gate Charge (4.5V) VDS=48V , VGS=4.5V , ID=15A 53.3 --- nC
Ciss Input Capacitance VDS=15V , VGS=0V , f=1MHz 3240 --- pF
Coss Output Capacitance --- 210 --- pF
Crss Reverse Transfer Capacitance --- 146 --- pF
Diode Characteristics
IS Continuous Source Current1,5 VG=VD=0V , Force Current --- 52 A
ISM Pulsed Source Current2,5 --- 120 A
VSD Diode Forward Voltage2 VGS=0V , IS=A , TJ=25 --- 1.2 V
trr Reverse Recovery Time IF=15A , dI/dt=100A/s , TJ=25 --- 18 nS
qrr Reverse Recovery Charge --- 14 nC

2410121503_HUASHUO-HSBA6016_C508829.pdf

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