HXY MOSFET NVTFS5116PL HXY P Channel MOSFET Featuring Advanced Trench Technology and Low Gate Charge
Key Attributes
Model Number:
NVTFS5116PL-HXY
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
20A
Operating Temperature -:
-55℃~+150℃
RDS(on):
85mΩ@4.5V,6A
Gate Threshold Voltage (Vgs(th)):
1.2V
Reverse Transfer Capacitance (Crss@Vds):
85pF@15V
Number:
1 P-Channel
Input Capacitance(Ciss):
585pF@15V
Pd - Power Dissipation:
25W
Gate Charge(Qg):
6.1nC@4.5V
Mfr. Part #:
NVTFS5116PL-HXY
Package:
DFN-8L(3x3)
Product Description
Product Overview
The NVTFS5116PL-HXY is a P-Channel Enhancement Mode MOSFET from HUAXUANYANG ELECTRONICS, utilizing advanced trench technology. It offers excellent RDS(ON), low gate charge, and can operate with gate voltages as low as 4.5V. This device is suitable for battery protection and other switching applications.
Product Attributes
- Brand: HUAXUANYANG ELECTRONICS CO.,LTD
- Product ID: NVTFS5116PL-HXY
- Package: DFN3X3-8L
- Website: www.hxymos.com
- Origin: Shenzhen HuaXuanYang Electronics CO.,LTD
Technical Specifications
| Parameter | Conditions | Min. | Typ. | Max. | Unit |
| Drain-Source Breakdown Voltage (BVDSS) | VGS=0V , ID=-250uA | -60 | V | ||
| BVDSS Temperature Coefficient | Reference to 25 , ID=-1mA | -0.023 | V/ | ||
| Static Drain-Source On-Resistance (RDS(ON)) | VGS=-10V , ID=-10A | 65 | m | ||
| Static Drain-Source On-Resistance (RDS(ON)) | VGS=-4.5V , ID=-6A | 90 | m | ||
| Gate Threshold Voltage (VGS(th)) | VGS=VDS , ID =-250uA | -1.2 | -2.5 | V | |
| VGS(th) Temperature Coefficient | 4 | mV/ | |||
| Drain-Source Leakage Current (IDSS) | VDS=-24V , VGS=0V , TJ=25 | -1 | uA | ||
| Drain-Source Leakage Current (IDSS) | VDS=-24V , VGS=0V , TJ=55 | -5 | uA | ||
| Gate-Source Leakage Current (IGSS) | VGS=20V , VDS=0V | 100 | nA | ||
| Forward Transconductance (gfs) | VDS=-5V , ID=-15A | 12 | S | ||
| Total Gate Charge (Qg) | VDS=-15V , VGS=-4.5V , ID=-15A | 6.1 | nC | ||
| Gate-Source Charge (Qgs) | 3.1 | ||||
| Gate-Drain Charge (Qgd) | 1.8 | ||||
| Turn-On Delay Time (td(on)) | VDD=-15V , VGS=-10V , RG=3.3, ID=-15A | 2.6 | ns | ||
| Rise Time (tr) | 8.6 | ||||
| Turn-Off Delay Time (td(off)) | 33.6 | ||||
| Fall Time (tf) | 6 | ||||
| Input Capacitance (Ciss) | VDS=-15V , VGS=0V , f=1MHz | 585 | pF | ||
| Output Capacitance (Coss) | 100 | ||||
| Reverse Transfer Capacitance (Crss) | 85 | ||||
| Continuous Source Current (IS) | VG=VD=0V , Force Current | -20 | A | ||
| Pulsed Source Current (ISM) | -30 | A | |||
| Diode Forward Voltage (VSD) | VGS=0V , IS=-1A , TJ=25 | -1.2 | V | ||
| Reverse Recovery Time (trr) | IF=-15A , dI/dt=100A/s , TJ=25 | 6.1 | ns | ||
| Reverse Recovery Charge (Qrr) | 1.4 | nC | |||
| Continuous Drain Current (ID) | VGS @ 10V, TC=25 | -20 | A | ||
| Continuous Drain Current (ID) | VGS @ 10V, TC=100 | -12 | A | ||
| Pulsed Drain Current (IDM) | -30 | A | |||
| Total Power Dissipation (PD) | TC=25 | 25 | W | ||
| Storage Temperature Range (TSTG) | -55 | 150 | |||
| Operating Junction Temperature Range (TJ) | -55 | 150 | |||
| Thermal Resistance Junction-ambient (RJA) | 62 | /W | |||
| Thermal Resistance Junction-Case (RJC) | 5 | /W |
2509181602_HXY-MOSFET-NVTFS5116PL-HXY_C5148669.pdf
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