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quality High cell density trenched MOSFET HUASHUO HSBB3202 N channel device for synchronous buck converters factory
quality High cell density trenched MOSFET HUASHUO HSBB3202 N channel device for synchronous buck converters factory

High cell density trenched MOSFET HUASHUO HSBB3202 N channel device for synchronous buck converters

Key Attributes
Model Number: HSBB3202
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
28A
Operating Temperature -:
-55℃~+150℃
RDS(on):
18mΩ@10V,28A
Gate Threshold Voltage (Vgs(th)):
1V
Reverse Transfer Capacitance (Crss@Vds):
65pF@15V
Number:
2 N-Channel
Pd - Power Dissipation:
20.8W
Input Capacitance(Ciss):
572pF@15V
Gate Charge(Qg):
7.2nC@4.5V
Mfr. Part #:
HSBB3202
Package:
PRPAK3x3-8L
Product Description

Product Overview

The HSBB3202 is a high cell density trenched N-channel MOSFET designed for synchronous buck converter applications. It offers excellent RDS(ON) and gate charge characteristics, meeting RoHS and Green Product requirements. This device is 100% EAS guaranteed with full function reliability approved, providing excellent Cdv/dt effect decline through advanced high cell density trench technology.

Product Attributes

  • Brand: HS-Semi
  • Model: HSBB3202
  • Certifications: RoHS, Green Product
  • Technology: Advanced high cell density Trench
  • Guarantees: 100% EAS Guaranteed

Technical Specifications

Symbol Parameter Conditions Min. Typ. Max. Unit
VDS Drain-Source Voltage 30 V
VGS Gate-Source Voltage ±20 V
ID@TC=25 Continuous Drain Current, VGS @ 10V1 28 A
ID@TC=100 Continuous Drain Current, VGS @ 10V1 18 A
ID@TA=25 Continuous Drain Current, VGS @ 10V1 7.4 A
ID@TA=70 Continuous Drain Current, VGS @ 10V1 6 A
IDM Pulsed Drain Current2 56 A
EAS Single Pulse Avalanche Energy3 22.1 mJ
IAS Avalanche Current 21 A
PD@TC=25 Total Power Dissipation4 20.8 W
PD@TA=25 Total Power Dissipation4 1.67 W
TSTG Storage Temperature Range -55 150
TJ Operating Junction Temperature Range -55 150
RJA Thermal Resistance Junction-ambient 75 /W
RJC Thermal Resistance Junction-Case1 6 /W
BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA 30 V
ΔBVDSS/ΔTJ BVDSS Temperature Coefficient Reference to 25 , ID=1mA 0.022 V/
RDS(ON),max Static Drain-Source On-Resistance2 VGS=10V , ID=10A 18 m
RDS(ON),max Static Drain-Source On-Resistance2 VGS=4.5V , ID=5A 30 m
VGS(th) Gate Threshold Voltage VGS=VDS , ID =250uA 1.0 2.5 V
ΔVGS(th)/ΔTJ VGS(th) Temperature Coefficient -5.1 mV/
IDSS Drain-Source Leakage Current VDS=24V , VGS=0V , TJ=25 1 µA
IDSS Drain-Source Leakage Current VDS=24V , VGS=0V , TJ=55 5 µA
IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V ±100 nA
gfs Forward Transconductance VDS=5V , ID=10A 4.5 S
Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz 2.5 Ω
Qg Total Gate Charge (4.5V) VDS=20V , VGS=4.5V , ID=10A 7.2 nC
Qgs Gate-Source Charge 1.4 nC
Qgd Gate-Drain Charge 2.2 nC
td(on) Turn-On Delay Time VDD=12V , VGS=10V , RG=3.3Ω ID=5A 4.1 ns
tr Rise Time 9.8 ns
td(off) Turn-Off Delay Time 15.5 ns
tf Fall Time 6.0 ns
Ciss Input Capacitance VDS=15V , VGS=0V , f=1MHz 572 pF
Coss Output Capacitance 81 pF
Crss Reverse Transfer Capacitance 65 pF
IS Continuous Source Current1,5 VG=VD=0V , Force Current 28 A
ISM Pulsed Source Current2,5 56 A
VSD Diode Forward Voltage2 VGS=0V , IS=1A , TJ=25 1.2 V

2410121447_HUASHUO-HSBB3202_C5128201.pdf
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