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quality SiC Power MOSFET N Channel HXY MOSFET HC3M001K170J with Avalanche Ruggedness and High Pulsed Current factory
quality SiC Power MOSFET N Channel HXY MOSFET HC3M001K170J with Avalanche Ruggedness and High Pulsed Current factory

SiC Power MOSFET N Channel HXY MOSFET HC3M001K170J with Avalanche Ruggedness and High Pulsed Current

Key Attributes
Model Number: HC3M001K170J
Product Custom Attributes
Drain To Source Voltage:
1.7kV
Current - Continuous Drain(Id):
6.7A
RDS(on):
700mΩ@20V
Operating Temperature -:
-55℃~+175℃
Gate Threshold Voltage (Vgs(th)):
1.8V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
2.2pF
Output Capacitance(Coss):
15.3pF
Pd - Power Dissipation:
86W
Input Capacitance(Ciss):
285pF
Gate Charge(Qg):
16.5nC
Mfr. Part #:
HC3M001K170J
Package:
TO-263-7L
Product Description

HUAXUANYANG SiC Power MOSFET N-Channel Enhancement Mode

The HUAXUANYANG HC3M001K170J is a SiC Power MOSFET designed for high-performance applications. It offers high blocking voltage with low on-resistance, high-speed switching with low capacitances, and avalanche ruggedness. This product is suitable for solar inverters, switch mode power supplies, auxiliary power supplies, and smart meters.

Product Attributes

  • Brand: HUAXUANYANG
  • Model: HC3M001K170J
  • Origin: Shenzhen, China
  • Material: SiC (Silicon Carbide)
  • Package: TO-263-7L
  • Channel Type: N-Channel
  • Mode: Enhancement Mode
  • Website: www.hxymos.com

Technical Specifications

Parameter Symbol Value Unit Test Condition
Drain-source voltage VDS 1700 V
Continuous drain current ID 16.7 A TC = 25C
Pulsed drain current ID pulse 86 A (TC = 25C, tp limited by Tjmax)
Gate-Source voltage VGS -4/+18 V
Power dissipation Ptot 1000 W (TC = 25C)
Operating junction and storage temperature Tj , Tstg -55...+175 C
Avalanche energy, single pulse EAS 6.7 mJ (L=10mH)
Drain-source on-state resistance RDS(on) 285 m VGS=18V,ID=1A, Tj=25C
Drain-source breakdown voltage BVDSS 1700 V VGS=0V, ID=100uA
Gate threshold voltage VGS(th ) 3 V VDS=VGS,ID=380uA
Zero gate voltage drain current IDSS 1 A VDS=1700V,VGS=0V Tj=25C
Input Capacitance Ciss 1280 pF VDS = 1000V VGS = 0V TJ = 25C VAC = 25mV f = 1MHz
Output Capacitance Coss 700 pF VDS = 1000V VGS = 0V TJ = 25C VAC = 25mV f = 1MHz
Reverse Transfer Capacitance Crss 15.3 pF VDS = 1000V VGS = 0V TJ = 25C VAC = 25mV f = 1MHz
Gate Total Charge QG 45.4 nC VDD = 1000V VGS = -3.5/+18V ID =2A RG =10 L=1880uH
Turn-on delay time td(on) 20.4 ns VGS = -3.5/+18V ID =2A RG =10 L=1880uH
Turn-off delay time td(off) 56.1 ns VGS = -3.5/+18V ID =2A RG =10 L=1880uH
Fall time tf 33.5 ns VGS = -3.5/+18V ID =2A RG =10 L=1880uH
Body Diode Reverse Recovery Charge Qrr 33.5 nC VR = 1000V, ID = 2A, di/dt = 1000A/S
Body Diode Reverse Recovery Time trr 56.1 ns VR = 1000V, ID = 2A, di/dt = 1000A/S
Body Diode Forward Voltage VSD 3.8 V VGS=0V,ISD=1A, TJ=25C
Thermal resistance, junction case RthJC 1.7 C/W Max
Thermal resistance, junction ambient RthJA 40 C/W Max

2509181538_HXY-MOSFET-HC3M001K170J_C22449551.pdf

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