Trench N Channel MOSFET HUASHUO SI2302 Designed for Fast Switching and Load Switch Applications
Key Attributes
Model Number:
SI2302
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
3A
Operating Temperature -:
-55℃~+150℃
RDS(on):
60mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
20pF
Number:
1 N-channel
Output Capacitance(Coss):
39pF
Input Capacitance(Ciss):
180pF
Pd - Power Dissipation:
710mW
Gate Charge(Qg):
3.5nC@4.5V
Mfr. Part #:
SI2302
Package:
SOT-23
Product Description
Product Overview
The SI2302 is a high cell density trenched N-channel MOSFET designed for fast switching applications. It offers excellent RDS(ON) and efficiency, making it ideal for most low-power switching and load switch applications. This device meets RoHS and Green Product requirements and features super low gate charge, and excellent Cdv/dt effect decline due to its advanced high cell density Trench technology.
Product Attributes
- Brand: HS-Semi
- Product Type: N-Channel MOSFET
- Technology: Trench
- Certifications: RoHS, Green Product
- Package: SOT-23
Technical Specifications
| Model | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| SI2302 | Drain-Source Voltage (VDS) | 20 | V | |||
| Gate-Source Voltage (VGS) | ±12 | V | ||||
| Continuous Drain Current (ID@TA=25) | VGS @ 4.5V1 | 3 | A | |||
| Continuous Drain Current (ID@TA=70) | VGS @ 4.5V1 | 2.2 | A | |||
| Pulsed Drain Current (IDM)2 | 10 | A | ||||
| Total Power Dissipation (PD@TA=25)3 | 0.71 | W | ||||
| Storage Temperature Range (TSTG) | -55 | 150 | ||||
| Operating Junction Temperature Range (TJ) | -55 | 150 | ||||
| Thermal Resistance Junction-ambient (RJA)1 | 120 | /W | ||||
| Thermal Resistance Junction-Case (RJC)1 | 65 | /W | ||||
| Static Drain-Source On-Resistance (RDS(ON),typ)2 | VGS=4.5V, ID=2.5A | 46 | m | |||
| Static Drain-Source On-Resistance (RDS(ON))2 | VGS=2.5V, ID=1A | 61 | 85 | m | ||
| Drain-Source Breakdown Voltage (BVDSS) | VGS=0V, ID=250uA | 20 | V | |||
| Gate Threshold Voltage (VGS(th)) | VGS=VDS, ID =250uA | 0.5 | 0.65 | 1.0 | V | |
| Drain-Source Leakage Current (IDSS) | VDS=16V, VGS=0V, TJ=25 | 1 | uA | |||
| Drain-Source Leakage Current (IDSS) | VDS=16V, VGS=0V, TJ=55 | 5 | uA | |||
| Gate-Source Leakage Current (IGSS) | VGS=12V, VDS=0V | ±100 | nA | |||
| Forward Transconductance (gfs) | VDS=5V, ID=2A | 5 | S | |||
| Total Gate Charge (Qg) | VDS=10V, VGS=4.5V, ID=2.5A | 3.5 | nC | |||
| Gate-Source Charge (Qgs) | 0.6 | |||||
| Gate-Drain Charge (Qgd) | 0.45 | |||||
| Turn-On Delay Time (td(on)) | VDD=10V, VGS=4.5V, RG=6, ID=2.5A | 8 | ns | |||
| Rise Time (tr) | 7 | ns | ||||
| Turn-Off Delay Time (td(off)) | 30 | ns | ||||
| Fall Time (tf) | 7 | ns | ||||
| Input Capacitance (Ciss) | VDS=10V, VGS=0V, f=1MHz | 180 | pF | |||
| Output Capacitance (Coss) | 39 | pF | ||||
| Reverse Transfer Capacitance (Crss) | 20 | pF | ||||
| Continuous Source Current (IS)1,4 | VG=VD=0V, Force Current | 3 | A | |||
| Diode Forward Voltage (VSD)2 | VGS=0V, IS=1A, TJ=25 | 1.2 | V |
Notes:
- 1. Data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
- 2. Data tested by pulsed, pulse width ≤300µs, duty cycle ≤2%.
- 3. Power dissipation is limited by 150°C junction temperature.
- 4. Data is theoretically the same as ID and IDM; in real applications, should be limited by total power dissipation.
Ordering Information:
| Part Number | Package Code | Packaging |
|---|---|---|
| SI2302 | SOT-23 | 3000/Tape&Reel |
2410122016_HUASHUO-SI2302_C22359215.pdf
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