Single N Channel MOSFET HUAYI HYG015N04LS1C2 Suitable for DC DC Converters and Switching Applications
Key Attributes
Model Number:
HYG015N04LS1C2
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
150A
Operating Temperature -:
-55℃~+175℃
RDS(on):
2.4mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
33pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
4.05nF
Pd - Power Dissipation:
75W
Gate Charge(Qg):
59nC@10V
Mfr. Part #:
HYG015N04LS1C2
Package:
PDFN5x6-8L
Product Description
Product Overview
The HYG015N04LS1C2 is a single N-Channel Enhancement Mode MOSFET designed for switching applications and power management in DC/DC converters. It offers high performance with a low RDS(ON) of 1.4m (typ.) at VGS = 10V and 2.0m (typ.) at VGS = 4.5V. This MOSFET is 100% avalanche tested, reliable, and rugged, with halogen-free options available.
Product Attributes
- Brand: HUAYI
- Origin: China
- Certifications: RoHS compliant, Halogen-free
- Package Type: PDFN5*6-8L
Technical Specifications
| Parameter | Test Conditions | Unit | Min | Typ. | Max | |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage (VDSS) | V | 40 | ||||
| Gate-Source Voltage (VGSS) | V | ±20 | ||||
| Junction Temperature Range (TJ) | °C | -55 | 175 | |||
| Storage Temperature Range (TSTG) | °C | -55 | 175 | |||
| Source Current-Continuous (IS) | Tc=25°C, Mounted on Large Heat Sink | A | 150 | |||
| Pulsed Drain Current (IDM) | Tc=25°C | A | 600 | |||
| Continuous Drain Current (ID) | Tc=25°C | A | 150 | |||
| Continuous Drain Current (ID) | Tc=100°C | A | 106 | |||
| Maximum Power Dissipation (PD) | Tc=25°C | W | 75 | |||
| Maximum Power Dissipation (PD) | Tc=100°C | W | 37.5 | |||
| Thermal Resistance, Junction-to-Case (RθJC) | °C/W | 2 | ||||
| Thermal Resistance, Junction-to-Ambient (RθJA) | Surface mounted on FR-4 board | °C/W | 45 | |||
| Single Pulsed-Avalanche Energy (EAS) | L=0.3mH, starting TJ=25°C, RG= 25Ω, VGS =10V | mJ | 370 | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage (BVDSS) | VGS=0V, IDS=250μA | V | 40 | - | - | |
| Drain-to-Source Leakage Current (IDSS) | VDS=40V,VGS=0V | μA | - | 1 | ||
| Drain-to-Source Leakage Current (IDSS) | TJ=125°C | μA | - | 50 | ||
| Gate Threshold Voltage (VGS(th)) | VDS=VGS, IDS=250μA | V | 1.2 | 1.9 | 2.5 | |
| Gate-Source Leakage Current (IGSS) | VGS=±20V,VDS=0V | nA | - | ±100 | ||
| Drain-Source On-State Resistance (RDS(ON)) | VGS=10V,IDS=20A | mΩ | 1.4 | 1.7 | ||
| Drain-Source On-State Resistance (RDS(ON)) | VGS=4.5V,IDS=20A | mΩ | 2.0 | 2.4 | ||
| Diode Forward Voltage (VSD) | ISD=20A,VGS=0V | V | 0.77 | 1.2 | ||
| Reverse Recovery Time (trr) | ISD=20A,dISD/dt=100A/μs | ns | 40 | - | ||
| Reverse Recovery Charge (Qrr) | nC | 43 | - | |||
| Gate Resistance (RG) | VGS=0V,VDS=0V, Frequency=1.0MHz | Ω | 1.95 | - | ||
| Input Capacitance (Ciss) | VGS=0V, VDS=25V, Frequency=1.0MHz | pF | 4050 | - | ||
| Output Capacitance (Coss) | pF | 890 | - | |||
| Reverse Transfer Capacitance (Crss) | pF | 33 | - | |||
| Turn-on Delay Time (td(ON)) | VDD=20V,RG=2.5Ω, IDS=20A,VGS=10V | ns | 14 | - | ||
| Turn-on Rise Time (Tr) | ns | 47 | - | |||
| Turn-off Delay Time (td(OFF)) | ns | 37 | - | |||
| Turn-off Fall Time (Tf) | ns | 7.5 | - | |||
| Total Gate Charge (Qg) | VGS=10V, VDS =32V, ID=20A | nC | 59 | - | ||
| Total Gate Charge (Qg) | VGS=4.5V | nC | 27 | - | ||
| Gate-Source Charge (Qgs) | nC | 15 | - | |||
| Gate-Drain Charge (Qgd) | nC | 8.5 | - | |||
2410121313_HUAYI-HYG015N04LS1C2_C2874970.pdf
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