N channel mosfet huashuo hsu4006 featuring trench technology and low gate charge for power conversion
Key Attributes
Model Number:
HSU4006
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
60A
Operating Temperature -:
-55℃~+150℃
RDS(on):
7.5mΩ@10V,12A
Gate Threshold Voltage (Vgs(th)):
-
Reverse Transfer Capacitance (Crss@Vds):
138pF@15V
Number:
1 N-channel
Input Capacitance(Ciss):
2.332nF@15V
Pd - Power Dissipation:
44.6W
Gate Charge(Qg):
18.8nC@4.5V
Mfr. Part #:
HSU4006
Package:
TO-252-2
Product Description
Product Overview
The HSU4006 is a high cell density trenched N-channel MOSFET designed for fast switching applications. It offers excellent RDS(ON) and low gate charge, making it ideal for synchronous buck converter applications. This MOSFET meets RoHS and Green Product requirements, is 100% EAS guaranteed, and has full function reliability approval. Key advantages include super low gate charge, excellent CdV/dt effect decline, and advanced high cell density Trench technology.
Product Attributes
- Brand: HS
- Product Type: N-Ch Fast Switching MOSFETs
- Certifications: RoHS, Green Product
- Reliability: 100% EAS Guaranteed, Full Function Reliability Approved
Technical Specifications
| Model | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| HSU4006 | Drain-Source Voltage (VDS) | 40 | V | |||
| Gate-Source Voltage (VGS) | ±20 | V | ||||
| Continuous Drain Current (ID@TC=25) | VGS @ 10V | 60 | A | |||
| Continuous Drain Current (ID@TC=100) | VGS @ 10V | 45 | A | |||
| Pulsed Drain Current (IDM) | 120 | A | ||||
| Single Pulse Avalanche Energy (EAS) | 76.1 | mJ | ||||
| Avalanche Current (IAS) | 39 | A | ||||
| Total Power Dissipation (PD@TC=25) | 44.6 | W | ||||
| Storage Temperature Range (TSTG) | -55 | 150 | ||||
| Operating Junction Temperature Range (TJ) | -55 | 150 | ||||
| Thermal Resistance Junction-ambient (RJA) | (Steady State) | --- | 62 | /W | ||
| Thermal Resistance Junction-Case (RJC) | --- | 2.8 | /W | |||
| Drain-Source Breakdown Voltage (BVDSS) | VGS=0V , ID=250uA | 40 | --- | --- | V | |
| HSU4006 | BVDSS Temperature Coefficient | Reference to 25 , ID=1mA | --- | 0.034 | --- | V/ |
| Static Drain-Source On-Resistance (RDS(ON),max) | VGS=10V , ID=12A | --- | --- | 7.5 | m | |
| Static Drain-Source On-Resistance (RDS(ON),max) | VGS=4.5V , ID=10A | --- | --- | 10 | m | |
| Gate Threshold Voltage (VGS(th)) | VGS=VDS , ID =250uA | 1.0 | --- | 2.5 | V | |
| VGS(th) Temperature Coefficient (VGS(th)/TJ) | --- | -4.96 | --- | mV/ | ||
| Drain-Source Leakage Current (IDSS) | VDS=32V , VGS=0V , TJ=25 | --- | --- | 1 | uA | |
| Drain-Source Leakage Current (IDSS) | VDS=32V , VGS=0V , TJ=55 | --- | --- | 5 | uA | |
| Gate-Source Leakage Current (IGSS) | VGS=20V , VDS=0V | --- | --- | ±100 | nA | |
| Forward Transconductance (gfs) | VDS=5V , ID=12A | --- | 39 | --- | S | |
| Gate Resistance (Rg) | VDS=0V , VGS=0V , f=1MHz | --- | 1.6 | --- | ||
| Total Gate Charge (Qg) | VDS=20V , VGS=4.5V , ID=12A | --- | 18.8 | nC | ||
| Gate-Source Charge (Qgs) | --- | 4.7 | --- | nC | ||
| Gate-Drain Charge (Qgd) | --- | 8.2 | --- | nC | ||
| HSU4006 | Turn-On Delay Time (Td(on)) | VDD=15V , VGS=10V , RG=3.3 ID=1A | --- | 14.3 | --- | ns |
| Rise Time (Tr) | --- | 2.6 | --- | ns | ||
| Turn-Off Delay Time (Td(off)) | --- | 77 | --- | ns | ||
| HSU4006 | Fall Time (Tf) | --- | 4.8 | --- | ns | |
| Input Capacitance (Ciss) | VDS=15V , VGS=0V , f=1MHz | --- | 2332 | --- | pF | |
| Output Capacitance (Coss) | --- | 193 | --- | pF | ||
| HSU4006 | Reverse Transfer Capacitance (Crss) | --- | 138 | --- | pF | |
| HSU4006 | Continuous Source Current (IS) | VG=VD=0V , Force Current | --- | --- | 60 | A |
| Pulsed Source Current (ISM) | --- | --- | 120 | A | ||
| HSU4006 | Diode Forward Voltage (VSD) | VGS=0V , IS=1A , TJ=25 | --- | --- | 1 | V |
Ordering Information
| Part Number | Package Code | Packaging |
|---|---|---|
| HSU4006 | TO252-2 | 2500/Tape&Reel |
2410121525_HUASHUO-HSU4006_C701003.pdf
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