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quality Fast switching MOSFET HUASHUO HSBA100P04 P channel device with low gate charge and high reliability factory
quality Fast switching MOSFET HUASHUO HSBA100P04 P channel device with low gate charge and high reliability factory

Fast switching MOSFET HUASHUO HSBA100P04 P channel device with low gate charge and high reliability

Key Attributes
Model Number: HSBA100P04
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
100A
RDS(on):
4.6mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.8V@250uA
Type:
P-Channel
Number:
1 P-Channel
Pd - Power Dissipation:
52.1W
Gate Charge(Qg):
115nC@10V
Mfr. Part #:
HSBA100P04
Package:
PRPAK5x6-8L
Product Description

Product Overview

The HSBA100P04 is a P-channel, 40V fast switching MOSFET featuring high cell density trench technology. It offers excellent RDS(ON) and gate charge characteristics, making it suitable for synchronous buck converter applications. This MOSFET meets RoHS and Green Product requirements, with 100% EAS guaranteed and full function reliability approval. Key benefits include super low gate charge, excellent CdV/dt effect decline, and availability as a green device.

Product Attributes

  • Brand: HS-Semi
  • Certifications: RoHS, Green Product
  • Technology: Advanced high cell density Trench
  • Package: PRPAK5*6

Technical Specifications

Symbol Parameter Conditions Min. Typ. Max. Units
Absolute Maximum Ratings
VDS Drain-Source Voltage -40 V
VGS Gate-Source Voltage 20 V
ID@TC=25 Continuous Drain Current, VGS @ -10V1 -100 A
ID@TC=100 Continuous Drain Current, VGS @ -10V1 -64 A
IDM Pulsed Drain Current2 -295 A
EAS Single Pulse Avalanche Energy3 380 mJ
IAS Avalanche Current -50 A
PD@TC=25 Total Power Dissipation4 52.1 W
TSTG Storage Temperature Range -55 150
TJ Operating Junction Temperature Range -55 150
Thermal Data
RJA Thermal Resistance Junction-Ambient1 --- 25 /W
RJC Thermal Resistance Junction-Case1 --- 1.8 /W
Electrical Characteristics (TJ=25 , unless otherwise noted)
BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=-250uA -40 --- --- V
BVDSS/TJ BVDSS Temperature Coefficient Reference to 25 , ID=-1mA --- -0.023 --- V/
RDS(ON) Static Drain-Source On-Resistance2 VGS=-10V , ID=-20A --- 4.6 5.8 m
VGS=-4.5V , ID=-10A --- 6 9.1 m
VGS(th) Gate Threshold Voltage VGS=VDS , ID =-250uA -1.2 -1.8 -2.5 V
VGS(th) VGS(th) Temperature Coefficient --- 4.74 --- mV/
IDSS Drain-Source Leakage Current VDS=-32V , VGS=0V , TJ=25 --- --- 1 uA
VDS=-32V , VGS=0V , TJ=55 --- --- 5 uA
IGSS Gate-Source Leakage Current VGS=20V , VDS=0V --- --- 100 nA
gfs Forward Transconductance VDS=-15V , ID=-18A --- 50 --- S
Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 7 14
Qg Total Gate Charge VDS=-20V , VGS=-10V , ID=-12A --- 115 --- nC
Qgs Gate-Source Charge --- 24 --- nC
Qgd Gate-Drain Charge --- 26 --- nC
Td(on) Turn-On Delay Time VDD=-20V , VGS=-10V , RG=3, ID=-12A --- 19 --- ns
Tr Rise Time --- 12 --- ns
Td(off) Turn-Off Delay Time --- 80 --- ns
Tf Fall Time --- 18 --- ns
Ciss Input Capacitance VDS=-20V , VGS=0V , f=1MHz --- 7090 --- pF
Coss Output Capacitance --- 930 --- pF
Crss Reverse Transfer Capacitance --- 722 --- pF
Diode Characteristics
IS Continuous Source Current1,5 VG=VD=0V , Force Current --- --- -100 A
VSD Diode Forward Voltage2 VGS=0V , IS=-1A , TJ=25 --- --- -1.2 V

2410121629_HUASHUO-HSBA100P04_C5349153.pdf
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