SiC Power MOSFET HXY MOSFET HC1M40120J Featuring Separate Driver Source Pin and High Voltage Rating
Key Attributes
Model Number:
HC1M40120J
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
1.2kV
Current - Continuous Drain(Id):
65A
RDS(on):
40mΩ@18V
Operating Temperature -:
-40℃~+175℃
Gate Threshold Voltage (Vgs(th)):
4V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
14pF
Output Capacitance(Coss):
125pF
Pd - Power Dissipation:
326W
Input Capacitance(Ciss):
2.766nF
Gate Charge(Qg):
112nC
Mfr. Part #:
HC1M40120J
Package:
TO-263-7L
Product Description
Product Overview
The HC1M40120J is a SiC Power MOSFET from HUAXUANYANG HXY ELECTRONICS CO.,LTD. This N-Channel Enhancement Mode device leverages 3rd generation SiC MOSFET technology for high performance in demanding applications. It offers reduced switching losses, higher system efficiency, and increased power density due to its optimized package with a separate driver source pin, high blocking voltage with low on-resistance, high-speed switching with low capacitances, and a fast intrinsic diode with low reverse recovery. This makes it ideal for renewable energy systems, EV battery chargers, high voltage DC/DC converters, and Switch Mode Power Supplies.
Product Attributes
- Brand: HUAXUANYANG HXY ELECTRONICS CO.,LTD
- Model: HC1M40120J
- Material: SiC (Silicon Carbide)
- Channel Type: N-Channel Enhancement Mode
- Certifications: Halogen free, RoHS compliant
- Package: TO-263-7L
Technical Specifications
| Parameter | Symbol | Unit | Test Condition | Min. | Typ. | Max. | Value |
| Maximum Ratings | |||||||
| Operating junction and storage temperature | Tj , T stg | C | -40 | +175 | |||
| Drain-source voltage | VDS | V | 1200 | ||||
| Continuous drain current | ID | A | TC = 25C ,VGS = 15V | 120 | |||
| Continuous drain current | ID | A | TC = 100C,VGS = 15V | 65 | |||
| Pulsed drain current | ID pulse | A | (TC = 25C, tp limited by Tjmax) | 46 | |||
| Gate-Source voltage | VGS | V | -4 | +18 | |||
| Gate-Source voltageAbsolute maximum values | VGSmax | V | -8 | +22 | |||
| Power dissipation | Ptot | W | (TC = 25C) | 326 | |||
| Thermal Resistance | |||||||
| Thermal resistance, junction case. Max | RthJC | C/W | 0.46 | ||||
| Thermal resistance, junction ambient. Max | RthJA | C/W | 40 | ||||
| Static Characteristic | |||||||
| Drain-source on-state resistance | RDS(on) | m | VGS=18V, ID=33.3A, TJ=25C | 32 | 40 | ||
| Drain-source on-state resistance | RDS(on) | m | VGS=18V, ID=33.3A, TJ=175C | 59 | |||
| Zero gate voltage drain current | IDSS | A | VDS=1200V,VGS=0V | - | 1 | ||
| Zero gate voltage drain current | IDSS | A | VDS=1200V,VGS=0V, TC=175C | - | 20 | ||
| Gate threshold voltage | VGS(th ) | V | VDS=VGS,ID=10mA | 4 | 5 | ||
| Drain-source breakdown voltage | BVDSS | V | VGS=0V, ID=100uA | 1200 | |||
| Transconductance | gfs | S | VDS=20V,ID=33.3A | 100 | |||
| Gate-source leakage current | IGSS | nA | VGS=22V, VDS=0V | - | 20 | ||
| Electrical Characteristic (at Tj = 25 C, unless otherwise specified) | |||||||
| Drain-source on-state resistance | RDS(on) | m | VGS=15V, ID=33.3A, TJ=25C | 32 | 40 | ||
| Drain-source on-state resistance | RDS(on) | m | VGS=15V, ID=33.3A, TJ=175C | 59 | |||
| Dynamic Characteristic | |||||||
| Input Capacitance | Ciss | pF | VDS = 1000V, VGS = 0V, TJ = 25C | 288 | |||
| Output Capacitance | Coss | pF | VDS = 1000V, VGS = 0V, TJ = 25C | 112 | |||
| Reverse Transfer Capacitance | Crss | pF | VDS = 1000V, VGS = 0V, TJ = 25C | 14 | |||
| Gate Total Charge | QG | nC | VDS = 800V, VGS = 0/15V, ID = 33.3A | 51 | |||
| Gate-Source charge | Qgs | nC | VDD = 800V, VGS = -4/+15V, ID = 20A, RG = 2.5, L = 120uH | 5.4 | |||
| Gate-Drain charge | Qgd | nC | VDD = 800V, VGS = -4/+15V, ID = 20A, RG = 2.5, L = 120uH | 0.6 | |||
| Turn-on delay time | td(on) | ns | VDD = 800V, VGS = -4/+15V, ID = 20A, RG = 2.5, L = 120uH | 13.4 | |||
| Rise time | tr | ns | VDD = 800V, VGS = -4/+15V, ID = 20A, RG = 2.5, L = 120uH | 19 | |||
| Turn-off delay time | td(off) | ns | VDD = 800V, VGS = -4/+15V, ID = 20A, RG = 2.5, L = 120uH | 2766 | |||
| Fall time | tf | ns | VDD = 800V, VGS = -4/+15V, ID = 20A, RG = 2.5, L = 120uH | 5.3 | |||
| Turn-On Switching Energy | EON | J | VDD = 800V, VGS = -4/+15V, ID = 20A, RG = 2.5, L = 120uH | 701 | |||
| Turn-Off Switching Energy | EOFF | J | VDD = 800V, VGS = -4/+15V, ID = 20A, RG = 2.5, L = 120uH | 79 | |||
| Body Diode Characteristic | |||||||
| Body Diode Forward Voltage | VSD | V | VGS=-4V,ISD=20A, TJ=25C | 2.2 | 3 | ||
| Body Diode Forward Voltage | VSD | V | VGS=-4V,ISD=20A, TJ=175C | ||||
| Body Diode Reverse Recovery Time | trr | ns | VR = 800V, ID = 33.3A, di/dt = 1070A/S, TJ = 25C | 55 | |||
| Body Diode Reverse Recovery Charge | Qrr | nC | VR = 800V, ID = 33.3A, di/dt = 1070A/S, TJ = 25C | 4.8 | |||
2509181546_HXY-MOSFET-HC1M40120J_C41428801.pdf
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