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quality HSK0008 N Channel MOSFET Featuring Fast Switching Capability and High Cell Density Trench Structure factory
quality HSK0008 N Channel MOSFET Featuring Fast Switching Capability and High Cell Density Trench Structure factory

HSK0008 N Channel MOSFET Featuring Fast Switching Capability and High Cell Density Trench Structure

Key Attributes
Model Number: HSK0008
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
2.2A
Operating Temperature -:
-55℃~+150℃
RDS(on):
310mΩ@10V,2A
Gate Threshold Voltage (Vgs(th)):
2.5V
Reverse Transfer Capacitance (Crss@Vds):
16.4pF@15V
Number:
1 N-channel
Input Capacitance(Ciss):
508pF@15V
Pd - Power Dissipation:
1.5W
Gate Charge(Qg):
9.7nC@10V
Mfr. Part #:
HSK0008
Package:
SOT-89
Product Description

Product Overview

The HSK0008 is a high cell density trenched N-channel MOSFET designed for fast switching applications. It offers excellent RDS(ON) and efficiency, making it suitable for most small power switching and load switch applications. This device meets RoHS and Green Product requirements and is available as a Green Device. Key advantages include super low gate charge and excellent Cdv/dt effect decline, attributed to its advanced high cell density Trench technology.

Product Attributes

  • Brand: HS-Semi
  • Product Type: N-Channel Fast Switching MOSFET
  • Technology: Advanced high cell density Trench
  • Certifications: RoHS, Green Product
  • Availability: Green Device Available

Technical Specifications

Model Parameter Conditions Min. Typ. Max. Unit
HSK0008 Drain-Source Breakdown Voltage (BVDSS) VGS=0V, ID=250uA 100 --- --- V
Static Drain-Source On-Resistance (RDS(ON)) VGS=10V, ID=2A --- 260 310 m
Static Drain-Source On-Resistance (RDS(ON)) VGS=4.5V, ID=1A --- 270 320 m
Gate Threshold Voltage (VGS(th)) VGS=VDS, ID =250uA 1.0 1.5 2.5 V
Drain-Source Leakage Current (IDSS) VDS=80V, VGS=0V, TJ=25 --- --- 1 uA
Drain-Source Leakage Current (IDSS) VDS=80V, VGS=0V, TJ=25 --- --- 5 uA
Gate-Source Leakage Current (IGSS) VGS=20V, VDS=0V --- --- 100 nA
Forward Transconductance (gfs) VDS=5V, ID=2A --- 5.4 --- S
Total Gate Charge (Qg) VDS=80V, VGS=10V, ID=1A --- 9.7 --- nC
Continuous Drain Current (ID) VGS @ 10V, TA=25 --- --- 2.2 A
Continuous Drain Current (ID) VGS @ 10V, TA=70 --- --- 1.7 A
Pulsed Drain Current (IDM) --- --- --- 5.8 A
HSK0008 Total Power Dissipation (PD) TA=25 --- --- 1.5 W
Storage Temperature Range (TSTG) --- -55 --- 150
Operating Junction Temperature Range (TJ) --- -55 --- 150
Thermal Resistance Junction-ambient (RJA) --- --- --- 85 /W
Thermal Resistance Junction-Case (RJC) --- --- --- 36 /W
Model Parameter Conditions Typ. Max. Unit
HSK0008 Turn-On Delay Time (td(on)) VDD=50V, VGS=10V, RG=3.3, ID=1A 1.6 --- ns
Rise Time (tr) VDD=50V, VGS=10V, RG=3.3, ID=1A 19 --- ns
Turn-Off Delay Time (td(off)) VDD=50V, VGS=10V, RG=3.3, ID=1A 13.6 --- ns
HSK0008 Fall Time (tf) VDD=50V, VGS=10V, RG=3.3, ID=1A 19 --- ns
HSK0008 Input Capacitance (Ciss) VDS=15V, VGS=0V, f=1MHz 508 --- pF
Output Capacitance (Coss) VDS=15V, VGS=0V, f=1MHz 29 --- pF
Reverse Transfer Capacitance (Crss) VDS=15V, VGS=0V, f=1MHz 16.4 --- pF
HSK0008 Continuous Source Current (IS) VG=VD=0V, Force Current --- 2.2 A
Diode Forward Voltage (VSD) VGS=0V, IS=1A, TJ=25 --- 1.2 V
HSK0008 Reverse Recovery Time (Trr) IF=2A, dI/dt=100A/us, TJ=25 --- 17 nS
HSK0008 Reverse Recovery Charge (Qrr) IF=2A, dI/dt=100A/us, TJ=25 --- 14 nC
Part Number Package Packaging Quantity
HSK0008 SOT-89 Tape&Reel 4000

2410121656_HUASHUO-HSK0008_C700962.pdf

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