100V 230A N Channel Enhancement Mode MOSFET HUAYI HYG028N10NS1B6 for Power Switching Applications
Key Attributes
Model Number:
HYG028N10NS1B6
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
230A
Operating Temperature -:
-55℃~+175℃
RDS(on):
3.1mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Reverse Transfer Capacitance (Crss@Vds):
242pF
Number:
1 N-channel
Output Capacitance(Coss):
3.454nF
Input Capacitance(Ciss):
10.32nF
Pd - Power Dissipation:
300W
Gate Charge(Qg):
176nC@10V
Mfr. Part #:
HYG028N10NS1B6
Package:
TO-263-6
Product Description
HYG028N10NS1B6 N-Channel Enhancement Mode MOSFET
The HYG028N10NS1B6 is a 100V/230A N-Channel Enhancement Mode MOSFET designed for power switching applications. It features a low on-resistance of 2.4m (typ.) at VGS = 10V, 100% avalanche tested for reliability, and a rugged construction. This device is available in Halogen-Free and Green versions, compliant with RoHS standards. It is suitable for use in Uninterruptible Power Supplies and Motor Control systems.
Product Attributes
- Brand: HUAYI
- Product Code: HYG028N10NS1B6
- Package Type: TO-263-6L
- Certifications: RoHS Compliant, Halogen-Free, Green Devices Available
Technical Specifications
| Parameter | Test Conditions | Min | Typ. | Max | Unit |
|---|---|---|---|---|---|
| Absolute Maximum Ratings | |||||
| Drain-Source Voltage (VDSS) | 100 | V | |||
| Gate-Source Voltage (VGSS) | ±20 | V | |||
| Maximum Junction Temperature (TJ) | -55 | 175 | °C | ||
| Storage Temperature Range (TSTG) | -55 | 175 | °C | ||
| Source Current-Continuous (Body Diode) (IS) | Tc=25°C, Mounted on Large Heat Sink | 230 | A | ||
| Pulsed Drain Current (IDM) | Tc=25°C, Pulse width limited by max. junction temperature | 750 | A | ||
| Continuous Drain Current (ID) | Tc=25°C | 230 | A | ||
| Continuous Drain Current (ID) | Tc=100°C | 162 | A | ||
| Maximum Power Dissipation (PD) | Tc=25°C | 300 | W | ||
| Maximum Power Dissipation (PD) | Tc=100°C | 150 | W | ||
| Thermal Resistance, Junction-to-Case (RθJC) | 0.5 | °C/W | |||
| Thermal Resistance, Junction-to-Ambient (RθJA) | Surface mounted on FR-4 board | 60 | °C/W | ||
| Single Pulsed-Avalanche Energy (EAS) | L=0.3mH, Limited by TJmax, starting TJ=25°C, VDS=80V, VGS =10V | 1324.3 | mJ | ||
| Electrical Characteristics | |||||
| Drain-Source Breakdown Voltage (BVDSS) | VGS=0V,IDS=250μA | 100 | - | - | V |
| Drain-to-Source Leakage Current (IDSS) | VDS=100V,VGS=0V | - | - | 1.0 | μA |
| Drain-to-Source Leakage Current (IDSS) | TJ=125°C | - | - | 50 | μA |
| Gate Threshold Voltage (VGS(th)) | VDS=VGS, IDS=250μA | 2 | 3 | 4 | V |
| Gate-Source Leakage Current (IGSS) | VGS=±20V,VDS=0V | - | - | ±100 | nA |
| Drain-Source On-State Resistance (RDS(ON)) | VGS=10V,IDS=50A | - | 2.4 | 3.1 | mΩ |
| Diode Forward Voltage (VSD) | ISD=50A,VGS=0V | - | 0.84 | 1.3 | V |
| Reverse Recovery Time (trr) | ISD=50A,dISD/dt=100A/μs | - | 85.1 | - | ns |
| Reverse Recovery Charge (Qrr) | - | 202.4 | - | nC | |
| Gate Resistance (RG) | VGS=0V,VDS=0V,F=1MHz | - | 3.1 | - | Ω |
| Input Capacitance (Ciss) | VGS=0V, VDS=25V, Frequency=1MHz | - | 10320 | - | pF |
| Output Capacitance (Coss) | - | 3454 | - | pF | |
| Reverse Transfer Capacitance (Crss) | - | 242 | - | pF | |
| Turn-on Delay Time (td(ON)) | VDD=50V,RG=2.5Ω, IDS=50A,VGS=10V | - | 28.4 | - | ns |
| Turn-on Rise Time (Tr) | - | 105.8 | - | ns | |
| Turn-off Delay Time (td(OFF)) | - | 88.52 | - | ns | |
| Turn-off Fall Time (Tf) | - | 99.6 | - | ns | |
| Total Gate Charge (Qg) | VDS=80V, VGS=10V, ID=50A | - | 176 | - | nC |
| Gate-Source Charge (Qgs) | - | 56 | - | - | |
| Gate-Drain Charge (Qgd) | - | 48 | - | - | |
2409302203_HUAYI-HYG028N10NS1B6_C2886383.pdf
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