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quality Fast Switching N Channel MOSFET HSM4062 Featuring Low Gate Charge and Guaranteed EAS Performance factory
quality Fast Switching N Channel MOSFET HSM4062 Featuring Low Gate Charge and Guaranteed EAS Performance factory

Fast Switching N Channel MOSFET HSM4062 Featuring Low Gate Charge and Guaranteed EAS Performance

Key Attributes
Model Number: HSM4062
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
9.5A
Operating Temperature -:
-55℃~+150℃
RDS(on):
15mΩ@10V,8A
Gate Threshold Voltage (Vgs(th)):
1.7V
Reverse Transfer Capacitance (Crss@Vds):
19pF@15V
Number:
1 N-channel
Input Capacitance(Ciss):
376pF@15V
Pd - Power Dissipation:
2W
Gate Charge(Qg):
3.8nC@4.5V
Mfr. Part #:
HSM4062
Package:
SOP-8
Product Description

Product Overview

The HSM4062 is a N-Channel Fast Switching MOSFET designed for efficient power management. Featuring advanced Trench MOS technology, it offers low gate charge and guaranteed 100% EAS performance. This device is ideal for applications such as power management functions, DC-DC converters, and backlighting, with a green device option available.

Product Attributes

  • Brand: HS-Semi
  • Technology: Advanced Trench MOS
  • Device Type: N-Channel MOSFET
  • Features: Fast Switching, Low Gate Charge, 100% EAS Guaranteed, Green Device Available

Technical Specifications

Model Parameter Conditions Min. Typ. Max. Units
HSM4062 Drain-Source Voltage (VDS) 40 V
Gate-Source Voltage (VGS) 20 V
Continuous Drain Current (ID) @ TA=25, VGS @ 10V 9.5 A
Continuous Drain Current (ID) @ TA=70, VGS @ 10V 7.5 A
Pulsed Drain Current (IDM) 40 A
Single Pulse Avalanche Energy (EAS) 14.5 mJ
Avalanche Current (IAS) 17 A
Total Power Dissipation (PD) @ TA=25 2 W
Storage Temperature Range (TSTG) -55 150
Operating Junction Temperature Range (TJ) -55 150
Thermal Resistance Junction-ambient (RJA) Steady State --- 60 /W
Thermal Resistance Junction-Case (RJC) Steady State --- 32 /W
Drain-Source Breakdown Voltage (BVDSS) VGS=0V , ID=250uA 40 --- --- V
Static Drain-Source On-Resistance (RDS(ON)) VGS=10V , ID=8A 12.5 15 m
Static Drain-Source On-Resistance (RDS(ON)) VGS=4.5V , ID=6A 19 23 m
Gate Threshold Voltage (VGS(th)) VGS=VDS , ID =250uA 1.0 1.7 2.4 V
Drain-Source Leakage Current (IDSS) VDS=32V , VGS=0V , TJ=25 --- 1 uA
Gate-Source Leakage Current (IGSS) VGS=20V , VDS=0V --- 100 nA
Total Gate Charge (Qg) (4.5V) VDS=32V , VGS=4.5V , ID=6A 3.8 --- nC
Diode Characteristics Continuous Source Current (IS) VG=VD=0V , Force Current 9.5 A
Pulsed Source Current (ISM) 40 A
Diode Forward Voltage (VSD) VGS=0V , IS=1A , TJ=25 1.2 V

Note:

  • 1. Data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper.
  • 2. Data tested by pulsed, pulse width 300s, duty cycle 2%.
  • 3. EAS data shows Max. rating. Test condition: VDD=25V, VGS=10V, L=0.1mH, IAS=17A.
  • 4. Power dissipation is limited by 150 junction temperature.
  • 5. Data is theoretically the same as ID and IDM; in real applications, should be limited by total power dissipation.

Ordering Information:

Part Number Package Code Packaging
HSM4062 SOP-8 4000/Tape&Reel

2410121503_HUASHUO-HSM4062_C700988.pdf

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