SiC Power MOSFET HXY MOSFET HC2M0160120D Offering High Switching Frequency and Reduced Cooling Needs
Key Attributes
Model Number:
HC2M0160120D
Product Custom Attributes
Drain To Source Voltage:
1.2kV
Current - Continuous Drain(Id):
18A
Operating Temperature -:
-55℃~+150℃
RDS(on):
196mΩ
Gate Threshold Voltage (Vgs(th)):
4V
Reverse Transfer Capacitance (Crss@Vds):
5pF
Input Capacitance(Ciss):
606pF
Output Capacitance(Coss):
55pF
Pd - Power Dissipation:
125W
Gate Charge(Qg):
40nC
Mfr. Part #:
HC2M0160120D
Package:
TO-247-3L
Product Description
Product Overview
The HC2M0160120D is a SiC Power MOSFET, N-Channel Enhancement Mode, designed for high-performance applications. It offers high blocking voltage with low on-resistance, high-speed switching with low capacitances, and is easy to parallel and simple to drive. This MOSFET is resistant to latch-up and is halogen-free and RoHS compliant, leading to higher system efficiency, reduced cooling requirements, increased power density, and increased system switching frequency.
Product Attributes
- Brand: HUAXUANYANG
- Origin: Shenzhen HuaXuanYang Electronics CO.,LTD
- Material: SiC Power MOSFET
- Certifications: Halogen Free, RoHS Compliant
Technical Specifications
| Symbol | Parameter | Value | Unit | Test Conditions | Note | |
| Maximum Ratings | ||||||
| VDSmax | Drain - Source Voltage | 1200 | V | VGS = 0 V, ID = 100 A | ||
| VGSmax | Gate - Source Voltage | -10/+25 | V | Absolute maximum values | ||
| VGSop | Gate - Source Voltage | -5/+20 | V | Recommended operational values | ||
| ID | Continuous Drain Current | 18 | A | VGS = 20 V, TC = 25C | Fig. 19 | |
| ID | Continuous Drain Current | 12 | A | VGS = 20 V, TC = 100C | ||
| ID(pulse) | Pulsed Drain Current | 40 | A | Pulse width tP limited by Tjmax | Fig. 22 | |
| PD | Power Dissipation | 125 | W | TC=25C , TJ = 150 C | Fig. 20 | |
| TJ , Tstg | Operating Junction and Storage Temperature | -55 to +150 | C | |||
| TL | Solder Temperature | 260 | C | 1.6mm (0.063) from case for 10s | ||
| Md | Mounting Torque | 1.8 | Nm (lbf-in) | M3 or 6-32 screw | ||
| Electrical Characteristics | ||||||
| V(BR)DSS | Drain-Source Breakdown Voltage | 1200 | V | VGS = 0 V, ID = 100 A | ||
| VGS(th) | Gate Threshold Voltage | 2.0 | 4 | V | VDS = VGS, IDS = 2.5 mA | Fig. 11 |
| VGS(th) | Gate Threshold Voltage | 2.9 | V | VDS = VGS, IDS = 2.5 mA, TJ = 150C | ||
| IDSS | Zero Gate Voltage Drain Current | 1 | 100 | A | VDS = 1200 V, VGS = 0 V | |
| IGSS | Gate-Source Leakage Current | 250 | nA | VGS = 20 V, VDS = 0 V | ||
| RDS(on) | Drain-Source On-State Resistance | 160 | 196 | m | VGS = 20 V, ID = 10 A | Fig. 4, 5, 6 |
| RDS(on) | Drain-Source On-State Resistance | 290 | m | VGS = 20 V, ID = 10A, TJ = 150C | ||
| gfs | Transconductance | 3.8 | S | VDS= 20 V, IDS= 10 A | Fig. 7 | |
| gfs | Transconductance | 5.3 | S | VDS= 20 V, IDS= 10 A, TJ = 150C | ||
| Ciss | Input Capacitance | 606 | pF | VGS = 0 V VDS = 1000 V f = 1 MHz VAC = 25 mV | Fig. 17, 18 | |
| Coss | Output Capacitance | 55 | pF | VGS = 0 V VDS = 1000 V f = 1 MHz VAC = 25 mV | Fig. 17, 18 | |
| Crss | Reverse Transfer Capacitance | 5 | pF | VGS = 0 V VDS = 1000 V f = 1 MHz VAC = 25 mV | Fig. 17, 18 | |
| Eoss | Coss Stored Energy | 28 | J | Fig. 16 | ||
| EAS | Avalanche Energy, Single Pluse | 600 | mJ | ID = 10A, VDD = 50V | Fig. 29 | |
| EON | Turn-On Switching Energy | 121 | J | VDS = 800 V, VGS = -5/20 V, ID = 10A, RG(ext) = 2.5, L= 434H | Fig. 25 | |
| EOFF | Turn Off Switching Energy | 48 | J | VDS = 800 V, VGS = -5/20 V, ID = 10A, RG(ext) = 2.5, L= 434H | Fig. 25 | |
| td(on) | Turn-On Delay Time | 7 | ns | VDD = 800 V, VGS = -5/20 V ID = 10 A RG(ext) = 2.5 , RL = 80 Timing relative to VDS Per IEC60747-8-4 pg 83 | Fig. 27 | |
| tr | Rise Time | 9 | ns | VDD = 800 V, VGS = -5/20 V ID = 10 A RG(ext) = 2.5 , RL = 80 Timing relative to VDS Per IEC60747-8-4 pg 83 | Fig. 27 | |
| td(off) | Turn-Off Delay Time | 13 | ns | VDD = 800 V, VGS = -5/20 V ID = 10 A RG(ext) = 2.5 , RL = 80 Timing relative to VDS Per IEC60747-8-4 pg 83 | Fig. 27 | |
| tf | Fall Time | 14 | ns | VDD = 800 V, VGS = -5/20 V ID = 10 A RG(ext) = 2.5 , RL = 80 Timing relative to VDS Per IEC60747-8-4 pg 83 | Fig. 27 | |
| RG(int) | Internal Gate Resistance | 6.5 | f = 1 MHz, VAC = 25 mV | |||
| Qgs | Gate to Source Charge | 11 | nC | VDS = 800 V, VGS = -5/20 V ID = 10 A Per IEC60747-8-4 pg 21 | Fig. 12 | |
| Qgd | Gate to Drain Charge | 17 | nC | VDS = 800 V, VGS = -5/20 V ID = 10 A Per IEC60747-8-4 pg 21 | Fig. 12 | |
| Qg | Total Gate Charge | 40 | nC | VDS = 800 V, VGS = -5/20 V ID = 10 A Per IEC60747-8-4 pg 21 | Fig. 12 | |
| Reverse Diode Characteristics | ||||||
| VSD | Diode Forward Voltage | 3.9 | V | VGS = -5 V, IF=5 A | Fig. 8,9, 10 | |
| VSD | Diode Forward Voltage | 3.5 | V | VGS = -5V, IF=5 A, TJ = 150 C | ||
| IS | Continuous Diode Forward Current | 25 | A | TC = 25C | Note 1 | |
| trr | Reverse Recovery Time | 20 | ns | VGS = - 5 V, ISD = 10 A, VR = 800 V dif/dt = 2400 A/s | Note 1 | |
| Qrr | Reverse Recovery Charge | 192 | nC | VGS = - 5 V, ISD = 10 A, VR = 800 V dif/dt = 2400 A/s | Note 1 | |
| Irrm | Peak Reverse Recovery Current | 16 | A | VGS = - 5 V, ISD = 10 A, VR = 800 V dif/dt = 2400 A/s | Note 1 | |
| Thermal Characteristics | ||||||
| RJC | Thermal Resistance from Junction to Case | 0.9 | 1.0 | K/W | Fig. 21 | |
| RJA | Thermal Resistance From Junction to Ambient | 40 | K/W | |||
2509181522_HXY-MOSFET-HC2M0160120D_C19723851.pdf
Related Products
NPN transistor YTL MMBTH10 with 30V collector base breakdown voltage and 650MHz transition frequency
Product OverviewThe MMBTH10 is an NPN transistor in a SOT-23 package, designed for general-purpose applications. It offers a breakdown voltage of 30V (V(BR)CBO) and 25V (V(BR)CEO), with a DC current gain (hFE) of 60 at 10V VCE and 4mA IC. Its low collector-emitter saturation voltage (VCE(sat)) of 0...
General purpose NPN transistor YANGJIE BCX56 with tin plated leads and low saturation voltage
Product OverviewThe BCX56 is an NPN General Purpose Amplifier from Yangzhou Yangjie Electronic Technology Co., Ltd. It features a low collector-emitter saturation voltage and is housed in a SOT-89 package with UL-94 V-0 flammability rating. Halogen-free options are available upon request. This ...
Planar Die Zener Diode XZT BZT52C5V6S for Medium Current Applications Lead Free Version
XT ELECTRONICS BZT52C2V4S thru BZT52C43S ZENER DIODEThe XT ELECTRONICS BZT52C2V4S thru BZT52C43S series are planar die construction Zener diodes designed for general purpose and medium current applications. They are ideally suited for automated assembly processes and are available in lead-free ...
Silicon Carbide Power MOSFET YANGJIE YJD212040NCFG2 Designed for Fast Switching and High Temperature
Product OverviewThe YJD212040NCFG2 is a Silicon Carbide Power MOSFET (N-Channel Enhancement) designed for high-speed switching applications. It offers essentially no switching losses, reduced heat sink requirements, and a maximum working temperature of 175 C. Key features include high blocking ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
