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quality 100V P Channel Fast Switching MOSFET HUASHUO HSP0115 with Low Gate Charge and Electrical Performance factory
quality 100V P Channel Fast Switching MOSFET HUASHUO HSP0115 with Low Gate Charge and Electrical Performance factory

100V P Channel Fast Switching MOSFET HUASHUO HSP0115 with Low Gate Charge and Electrical Performance

Key Attributes
Model Number: HSP0115
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
23A
Operating Temperature -:
-55℃~+150℃
RDS(on):
95mΩ@10V,10A
Gate Threshold Voltage (Vgs(th)):
-
Reverse Transfer Capacitance (Crss@Vds):
76pF@20V
Number:
1 P-Channel
Input Capacitance(Ciss):
3.029nF@20V
Pd - Power Dissipation:
96W
Gate Charge(Qg):
44.5nC@10V
Mfr. Part #:
HSP0115
Package:
TO-220
Product Description

Product Overview

The HSP0115 is a P-Channel 100V Fast Switching MOSFET designed with advanced trench technology. It offers excellent RDS(ON) and low gate charge, making it suitable for a wide variety of applications. This MOSFET meets RoHS and Green Product requirements, is 100% EAS guaranteed, and features full function reliability approval. It is characterized by super low gate charge and excellent CdV/dt effect decline.

Product Attributes

  • Brand: HSP
  • Product Type: P-Channel MOSFET
  • Voltage Rating: 100V
  • Switching Speed: Fast Switching
  • Technology: Advanced Trench MOSFET
  • Certifications: RoHS, Green Product
  • Reliability: 100% EAS Guaranteed, Full Function Reliability Approved

Technical Specifications

Model Parameter Conditions Min. Typ. Max. Unit
HSP0115 Drain-Source Voltage (VDS) -100 V
Gate-Source Voltage (VGS) 20 V
Continuous Drain Current (ID @ TC=25) VGS @ -10V -23 A
Continuous Drain Current (ID @ TC=100) VGS @ -10V -16 A
Pulsed Drain Current (IDM) -75 A
Single Pulse Avalanche Energy (EAS) 157.2 mJ
Avalanche Current (IAS) 18.9 A
Total Power Dissipation (PD @ TC=25) 96 W
Storage Temperature Range (TSTG) -55 150
Operating Junction Temperature Range (TJ) -55 150
Thermal Resistance Junction-Ambient (RJA) 62 /W
Thermal Resistance Junction-Case (RJC) 1.3 /W
Drain-Source Breakdown Voltage (BVDSS) VGS=0V , ID=-250uA -100 V
Static Drain-Source On-Resistance (RDS(ON),max) VGS=-10V , ID=-23A 95 m
Static Drain-Source On-Resistance (RDS(ON)) VGS=-10V , ID=-10A 78 95 m
Static Drain-Source On-Resistance (RDS(ON)) VGS=-4.5V , ID=-8A 86 110 m
Gate Threshold Voltage (VGS(th)) VGS=VDS , ID =-250uA -1.2 -1.7 -2.5 V
Drain-Source Leakage Current (IDSS) VDS=-100V , VGS=0V , TJ=25 -50 uA
Gate-Source Leakage Current (IGSS) VGS=20V , VDS=0V 100 nA
Forward Transconductance (gfs) VDS=-10V , ID=-10A 24 S
Total Gate Charge (Qg) VDS=-50V , VGS=-10V , ID=-20A 44.5 nC
Gate-Source Charge (Qgs) 9.13 nC
Gate-Drain Charge (Qgd) 5.93 nC
Turn-On Delay Time (td(on)) VDD=-50V , VGS=-10V , RG=3.3, ID=-10A 12 ns
Rise Time (tr) 27.4 ns
Turn-Off Delay Time (td(off)) 79 ns
Fall Time (tf) 53.6 ns
Input Capacitance (Ciss) VDS=-20V , VGS=0V , f=1MHz 3029 pF
Output Capacitance (Coss) 129 pF
Reverse Transfer Capacitance (Crss) 76 pF
Continuous Source Current (IS) VG=VD=0V , Force Current -23 A
Diode Forward Voltage (VSD) VGS=0V , IS=-1A , TJ=25 -1.2 V
Reverse Recovery Time (trr) IF=-8A , di/dt=-100A/s , TJ=25 38.7 nS
Reverse Recovery Charge (Qrr) 22.4 nC

2409291036_HUASHUO-HSP0115_C508808.pdf
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