Low drain source ON resistance N Channel MOSFET HUASHUO HSBE2738 with RoHS and Green Product approval
Key Attributes
Model Number:
HSBE2738
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
12A
Operating Temperature -:
-55℃~+150℃
RDS(on):
9.5mΩ@4.5V,3A
Gate Threshold Voltage (Vgs(th)):
1.5V
Reverse Transfer Capacitance (Crss@Vds):
230pF@10V
Number:
2 N-Channel
Input Capacitance(Ciss):
735pF@10V
Pd - Power Dissipation:
1.47W
Gate Charge(Qg):
13nC@4.5V
Mfr. Part #:
HSBE2738
Package:
PRPAK(3x3)
Product Description
Product Overview
The HSBE2738 is a low RDS(ON) trenched N-Channel MOSFET with robust ESD protection, designed for fast switching applications. This product is particularly suitable for Lithium-ion battery pack applications and meets RoHS and Green Product requirements with full function reliability approval. Its key advantages include low drain-source ON resistance and availability as a Green Device.
Product Attributes
- Brand: HS-Semi
- Product Type: N-Channel MOSFET
- Certifications: RoHS, Green Product
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | 20 | V | |||
| VGS | Gate-Source Voltage | ±12 | V | |||
| ID@TA=25 | Continuous Drain Current1 | 12 | A | |||
| ID@TA=70 | Continuous Drain Current1 | 9.6 | A | |||
| IDM | Pulsed Drain Current2 | 72 | A | |||
| PD@TA=25 | Total Power Dissipation3 | 1.47 | W | |||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| Thermal Data | ||||||
| RJA | Thermal Resistance Junction-Ambient1 | 95 | /W | |||
| Product Summary | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=250uA | 20 | V | ||
| RDS(ON),max | 9.5 | m | ||||
| ID | 12 | A | ||||
| Electrical Characteristics (TJ=25 , unless otherwise noted) | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=250uA | 20 | V | ||
| BVDSS/TJ | BVDSS Temperature Coefficient | Reference to 25 , ID=1mA | 0.014 | V/ | ||
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=4.5V , ID=3A | 8 | 9.5 | m | |
| VGS=4.0V , ID=3A | 8.5 | 9.8 | m | |||
| VGS=3.1V , ID=3A | 10.5 | 12.5 | m | |||
| VGS=2.5V , ID=3A | 12 | 15 | m | |||
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =250uA | 0.5 | 1.5 | V | |
| VGS(th) | VGS(th) Temperature Coefficient | -2.09 | mV/ | |||
| IDSS | Drain-Source Leakage Current | VDS=16V , VGS=0V , TJ=25 | 1 | uA | ||
| IGSS | Gate-Source Leakage Current | VGS=±8V , VDS=0V | ±5 | uA | ||
| Rg | Gate Resistance | VDS=0V , VGS=0V , f=1MHz | 1.83 | |||
| Qg | Total Gate Charge (4.5V) | VDS=15V , VGS=4.5V , ID=10A | 13 | nC | ||
| Qgs | Gate-Source Charge | 2.3 | nC | |||
| Qgd | Gate-Drain Charge | 7.2 | nC | |||
| Td(on) | Turn-On Delay Time | VDD=15V , VGS=4.5V , RG=6, ID=6A | 22 | ns | ||
| Tr | Rise Time | 85 | ns | |||
| Td(off) | Turn-Off Delay Time | 125 | ns | |||
| Tf | Fall Time | 46 | ns | |||
| Ciss | Input Capacitance | VDS=10V , VGS=0V , F=1MHz | 735 | pF | ||
| Coss | Output Capacitance | 256 | pF | |||
| Crss | Reverse Transfer Capacitance | 230 | pF | |||
| Diode Characteristics | ||||||
| IS | Continuous Source Current1,6 | VG=VD=0V , Force Current | 12 | A | ||
| VSD | Diode Forward Voltage2 | VGS=0V , IS=1A , TJ=25 | 1.2 | V | ||
Notes:
1The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2The data tested by pulsed, pulse width ≤ 300us, duty cycle ≤ 2%.
3The power dissipation is limited by 150 junction temperature.
4The data is theoretically the same as ID and IDM, in real applications, should be limited by total power dissipation.
2410121642_HUASHUO-HSBE2738_C700971.pdf
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