Single N Channel MOSFET HUAYI HYG110N11LS1C2 with Low RDS ON and Halogen Free RoHS Compliant Package
Key Attributes
Model Number:
HYG110N11LS1C2
Product Custom Attributes
Drain To Source Voltage:
115V
Current - Continuous Drain(Id):
60A
RDS(on):
19mΩ@4.5V
Operating Temperature -:
-55℃~+175℃
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
6.6pF
Number:
1 N-channel
Input Capacitance(Ciss):
2.606nF
Pd - Power Dissipation:
71.4W
Gate Charge(Qg):
45.5nC@10V
Mfr. Part #:
HYG110N11LS1C2
Package:
PDFN-8(4.9x5.8)
Product Description
HYG110N11LS1C2 Single N-Channel Enhancement Mode MOSFET
Product Overview
The HYG110N11LS1C2 is a single N-Channel Enhancement Mode MOSFET designed for high-performance applications. It features a low on-resistance (RDS(ON)) of 9.8 m typ. at VGS = 10V and 14.5 m typ. at VGS = 4.5V, 100% avalanche tested, and a reliable, rugged design. Halogen-free devices are available, making it RoHS compliant. This MOSFET is suitable for DC-DC power management, quick charger applications, and LED lighting.
Product Attributes
- Brand: Hymexa
- Model: HYG110N11LS1C2
- Origin: China
- Certifications: RoHS Compliant, Halogen-Free
- Package Type: PDFN8L (5x6)
Technical Specifications
| Parameter | Test Conditions | Min | Typ. | Max | Unit |
|---|---|---|---|---|---|
| Absolute Maximum Ratings | |||||
| Drain-Source Voltage (VDSS) | Tc=25C Unless Otherwise Noted | - | - | 115 | V |
| Gate-Source Voltage (VGSS) | Tc=25C Unless Otherwise Noted | - | - | ±20 | V |
| Maximum Junction Temperature (TJ) | Tc=25C Unless Otherwise Noted | - | - | 175 | °C |
| Storage Temperature Range (TSTG) | Tc=25C Unless Otherwise Noted | -55 | - | 175 | °C |
| Source Current-Continuous (IS) | Body Diode, Tc=25°C, Mounted on Large Heat Sink | - | - | 60 | A |
| Pulsed Drain Current (IDM) | Tc=25°C | - | - | 220 | A |
| Continuous Drain Current (ID) | Tc=25°C | - | - | 60 | A |
| Continuous Drain Current (ID) | Tc=100°C | - | - | 42 | A |
| Maximum Power Dissipation (PD) | Tc=25°C | - | - | 71.4 | W |
| Maximum Power Dissipation (PD) | Tc=100°C | - | - | 35.7 | W |
| Thermal Resistance, Junction-to-Case (RθJC) | Tc=25°C | - | 2.1 | - | °C/W |
| Thermal Resistance, Junction-to-Ambient (RθJA) | ** Surface mounted on FR-4 board. | - | 47 | - | °C/W |
| Single Pulsed-Avalanche Energy (EAS) | *** L=0.3mH | - | 148.7 | - | mJ |
| Electrical Characteristics | |||||
| Drain-Source Breakdown Voltage (BVDSS) | VGS=0V, IDS=250μA | 115 | - | - | V |
| Drain-to-Source Leakage Current (IDSS) | VDS=115V,VGS=0V | - | - | 1 | μA |
| Drain-to-Source Leakage Current (IDSS) | TJ=100°C | - | - | 50 | μA |
| Gate Threshold Voltage (VGS(th)) | VDS=VGS, IDS=250μA | 1.0 | 1.9 | 3.0 | V |
| Gate-Source Leakage Current (IGSS) | VGS=±20V,VDS=0V | - | - | 100 | nA |
| Drain-Source On-State Resistance (RDS(ON)*) | VGS=10V,IDS=20A | - | 9.8 | 13 | mΩ |
| Drain-Source On-State Resistance (RDS(ON)*) | VGS=4.5V,IDS=20A | - | 14.5 | 19 | mΩ |
| Diode Forward Voltage (VSD*) | ISD=20A,VGS=0V | - | 0.84 | 1.3 | V |
| Reverse Recovery Time (trr) | ISD=20A,dISD/dt=100A/μs | - | 41.8 | - | ns |
| Reverse Recovery Charge (Qrr) | ISD=20A,dISD/dt=100A/μs | - | 55.2 | - | nC |
| Gate Resistance (RG) | VGS=0V,VDS=0V,F=1MHz | - | 1.6 | - | Ω |
| Input Capacitance (Ciss) | VGS=0V, VDS=50V, Frequency=1.0MHz | - | 2606 | - | pF |
| Output Capacitance (Coss) | VGS=0V, VDS=50V, Frequency=1.0MHz | - | 278 | - | pF |
| Reverse Transfer Capacitance (Crss) | VGS=0V, VDS=50V, Frequency=1.0MHz | - | 6.6 | - | pF |
| Turn-on Delay Time (td(ON)) | VDD=60V,RG=2.5Ω, IDS=20A,VGS=10V | - | 12.6 | - | ns |
| Turn-on Rise Time (Tr) | VDD=60V,RG=2.5Ω, IDS=20A,VGS=10V | - | 24.9 | - | ns |
| Turn-off Delay Time (td(OFF)) | VDD=60V,RG=2.5Ω, IDS=20A,VGS=10V | - | 32.6 | - | ns |
| Turn-off Fall Time (Tf) | VDD=60V,RG=2.5Ω, IDS=20A,VGS=10V | - | 45.9 | - | ns |
| Total Gate Charge (Qg(10V)) | VDS =60V, VGS=10V, ID=20A | - | 45.5 | - | nC |
| Total Gate Charge (Qg(4.5V)) | VDS =60V, VGS=4.5V, ID=20A | - | 22.8 | - | nC |
| Gate-Source Charge (Qgs) | VDS =60V, VGS=10V, ID=20A | - | 10.9 | - | nC |
| Gate-Drain Charge (Qgd) | VDS =60V, VGS=10V, ID=20A | - | 9.6 | - | nC |
2409302230_HUAYI-HYG110N11LS1C2_C2980991.pdf
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