HXY MOSFET HC3M0060065D SiC Power Transistor with Low Reverse Recovery and High Power Density
Key Attributes
Model Number:
HC3M0060065D
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
29A
RDS(on):
79mΩ
Operating Temperature -:
-40℃~+175℃
Gate Threshold Voltage (Vgs(th)):
3.6V
Type:
-
Reverse Transfer Capacitance (Crss@Vds):
9pF
Input Capacitance(Ciss):
1.02nF
Output Capacitance(Coss):
80pF
Pd - Power Dissipation:
150W
Gate Charge(Qg):
46nC
Mfr. Part #:
HC3M0060065D
Package:
TO-247-3L
Product Description
Product Overview
The HC3M0060065D is a 3rd Generation SiC Power MOSFET from HUAXUANYANG ELECTRONICS CO.,LTD. It features high blocking voltage with low on-resistance, high-speed switching with low capacitances, and a fast intrinsic diode with low reverse recovery. This MOSFET offers higher system efficiency, reduced cooling requirements, increased power density, and enables higher system switching frequencies. It is easy to parallel and simple to drive, making it suitable for applications like EV charging, server power supplies, solar PV inverters, UPS, and DC/DC converters.
Product Attributes
- Brand: HUAXUANYANG ELECTRONICS CO.,LTD
- Origin: Shenzhen HuaXuanYang Electronics CO.,LTD
- Material: SiC Power MOSFET
- Type: N-Channel Enhancement Mode
- Certifications: Halogen free, RoHS compliant
- Package: TO-247
- Marking: HC3M0060065D
- Website: www.hxymos.com
Technical Specifications
| Symbol | Parameter | Value | Unit | Note |
| VDSS | Drain - Source Voltage, TC = 25 C | 650 | V | |
| VGS | Gate - Source voltage (Under transient events < 100 ns) | -8/+19 | V | Fig. 29 |
| ID | Continuous Drain Current, VGS = 15 V, TC = 25C | 29 | A | Fig. 19 Note 1 |
| ID | Continuous Drain Current, VGS = 15 V, TC = 100C | 20 | A | |
| ID(pulse) | Pulsed Drain Current, Pulse width tP limited by Tjmax | 99 | A | |
| PD | Power Dissipation, TC=25C, TJ = 175 C | 150 | W | Fig. 20 |
| TJ , Tstg | Operating Junction and Storage Temperature | -40 to +175 | C | |
| TL | Solder Temperature, 1.6mm (0.063) from case for 10s | 260 | C | |
| Md | Mounting Torque, (M3 or 6-32 screw) | 1.8 | Nm lbf-in | |
| V(BR)DSS | Drain-Source Breakdown Voltage | 650 | V | VGS = 0 V, ID = 100 A |
| VGSon | Gate-Source Recommended Turn-On Voltage | 15 | V | Static Fig. 29 |
| VGSoff | Gate-Source Recommended Turn-Off Voltage | -4 | V | |
| VGS(th) | Gate Threshold Voltage | 1.8 / 2.3 / 3.6 | V | VDS = VGS, ID = 5 mA Fig. 11 |
| IDSS | Zero Gate Voltage Drain Current | 1 / 50 | A | VDS = 650 V, VGS = 0 V |
| IGSS | Gate-Source Leakage Current | 10 / 250 | nA | VGS = 15 V, VDS = 0 V |
| RDS(on) | Drain-Source On-State Resistance | 42 / 60 / 79 | m | VGS = 15 V, ID = 13.2 A Fig. 4, 5,6 |
| gfs | Transconductance | 10 / 9 | S | VDS= 20 V, IDS= 13.2 A Fig. 7 |
| Ciss | Input Capacitance | 1020 | pF | VGS = 0 V, VDS = 600 V f = 1 MHz VAC = 25 mV Fig. 17, 18 |
| Coss | Output Capacitance | 80 | pF | |
| Crss | Reverse Transfer Capacitance | 9 | pF | |
| Co(er) | Effective Output Capacitance (Energy Related) | 95 | pF | Note 1 |
| Co(tr) | Effective Output Capacitance (Time Related) | 132 | pF | |
| Eoss | Stored Energy | 15 | J | VDS = 600 V, 1 MHz Fig. 16 |
| EON | Turn-On Switching Energy (Body Diode) | 110 | J | VDS = 400 V, VGS = -4 V/15 V, ID = 13.2 A, RG(ext) = 2.5, L= 135 H, TJ = 175C FWD = Internal Body Diode of MOSFET Fig. 25 |
| EOFF | Turn Off Switching Energy (Body Diode) | 22 | J | |
| EON | Turn-On Switching Energy (External SiC Diode) | 63 | J | VDS = 400 V, VGS = -4 V/15 V, ID = 13.2 A, RG(ext) = 2.5, L= 135 H, TJ = 175C FWD = External SiC Diode Fig. 25 |
| EOFF | Turn Off Switching Energy (External SiC Diode) | 28 | J | |
| td(on) | Turn-On Delay Time | 9 | ns | VDD = 400 V, VGS = -4 V/15 V ID = 13.2 A, RG(ext) = 2.5 , L= 135 H Timing relative to VDS Inductive load Fig. 26 |
| tr | Rise Time | 20 | ns | |
| td(off) | Turn-Off Delay Time | 17 | ns | |
| tf | Fall Time | 8 | ns | |
| RG(int) | Internal Gate Resistance | 3 | f = 1 MHz, VAC = 25 mV | |
| Qgs | Gate to Source Charge | 14 | nC | VDS = 400 V, VGS = -4 V/15 V ID = 13.2 A Per IEC60747-8-4 pg 21 Fig. 12 |
| Qgd | Gate to Drain Charge | 14 | nC | |
| Qg | Total Gate Charge | 46 | nC | |
| VSD | Diode Forward Voltage | 5.1 / 4.8 | V | VGS = -4 V, ISD = 6.6 A, TJ = 25 C / 175 C Fig. 8, 9, 10 |
| IS | Continuous Diode Forward Current | 23 | A | VGS = -4 V, TC = 25C |
| IS, pulse | Diode pulse Current | 99 | A | VGS = -4 V, pulse width tP limited by Tjmax |
| trr | Reverse Recover time | 20 / 29 | ns | VGS = -4 V, ISD = 13.2 A, VR = 400 V dif/dt = 1200 A/s / 750 A/s, TJ = 175 C |
| Qrr | Reverse Recovery Charge | 190 / 181 | nC | |
| Irrm | Peak Reverse Recovery Current | 16 / 9 | A | |
| RJC | Thermal Resistance from Junction to Case | 0.99 | C/W | Fig. 21 |
| RJA | Thermal Resistance From Junction to Ambient | 40 | C/W |
2509181522_HXY-MOSFET-HC3M0060065D_C19723857.pdf
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