N Channel MOSFET HUASHUO HSS2302A with Super Low Gate Charge and High Cell Density Trench Technology
Key Attributes
Model Number:
HSS2302A
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
3.6A
Operating Temperature -:
-55℃~+150℃
RDS(on):
70mΩ@2.5V,2A
Gate Threshold Voltage (Vgs(th)):
1.2V
Reverse Transfer Capacitance (Crss@Vds):
35pF@15V
Number:
1 N-channel
Input Capacitance(Ciss):
310pF@15V
Pd - Power Dissipation:
1W
Gate Charge(Qg):
4.6nC@4.5V
Mfr. Part #:
HSS2302A
Package:
SOT-23
Product Description
Product Overview
The HSS2302A is a high cell density trenched N-channel MOSFET designed for fast switching applications. It offers excellent RDS(ON) and efficiency, making it suitable for most low-power switching and load switch applications. This device meets RoHS and Green Product requirements and has undergone full function reliability approval. It features super low gate charge and excellent Cdv/dt effect decline due to its advanced high cell density trench technology.
Product Attributes
- Brand: HSS
- Product Type: N-Ch Fast Switching MOSFETs
- Certifications: RoHS, Green Product
- Technology: Advanced high cell density Trench technology
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | 20 | V | |||
| VGS | Gate-Source Voltage | 12 | V | |||
| ID@TA=25 | Continuous Drain Current, VGS @ 4.5V1 | 3.6 | A | |||
| ID@TA=70 | Continuous Drain Current, VGS @ 4.5V1 | 2.8 | A | |||
| IDM | Pulsed Drain Current2 | 14.4 | A | |||
| PD@TA=25 | Total Power Dissipation3 | 1 | W | |||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| Thermal Data | ||||||
| RJA | Thermal Resistance Junction-ambient1 | 125 | /W | |||
| RJC | Thermal Resistance Junction-Case1 | 80 | /W | |||
| Electrical Characteristics (TJ=25 , unless otherwise noted) | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=250uA | 20 | V | ||
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=4.5V , ID=3A | 30 | 50 | m | |
| VGS=2.5V , ID=2A | 40 | 70 | m | |||
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =250uA | 0.4 | 1.2 | V | |
| IDSS | Drain-Source Leakage Current | VDS=16V , VGS=0V , TJ=25 | 1 | uA | ||
| VDS=16V , VGS=0V , TJ=55 | 5 | uA | ||||
| IGSS | Gate-Source Leakage Current | VGS=12V , VDS=0V | 100 | nA | ||
| gfs | Forward Transconductance | VDS=5V , ID=3A | 10.5 | S | ||
| Qg | Total Gate Charge (4.5V) | VDS=15V , VGS=4.5V , ID=3A | 4.6 | nC | ||
| Qgs | Gate-Source Charge | 0.7 | nC | |||
| Qgd | Gate-Drain Charge | 1.5 | nC | |||
| Td(on) | Turn-On Delay Time | VDD=10V , VGS=4.5V , RG=3.3, ID=3A | 1.6 | ns | ||
| Tr | Rise Time | 42 | ns | |||
| Td(off) | Turn-Off Delay Time | 14 | ns | |||
| Tf | Fall Time | 7 | ns | |||
| Ciss | Input Capacitance | VDS=15V , VGS=0V , f=1MHz | 310 | pF | ||
| Coss | Output Capacitance | 49 | pF | |||
| Crss | Reverse Transfer Capacitance | 35 | pF | |||
| Diode Characteristics | ||||||
| IS | Continuous Source Current1,4 | VG=VD=0V , Force Current | 3.6 | A | ||
| VSD | Diode Forward Voltage2 | VGS=0V , IS=1A , TJ=25 | 1.2 | V | ||
| Ordering Information | ||||||
| Part Number | Package code | Packaging | ||||
| HSS2302A | SOT-23 | 3000/Tape&Reel | ||||
2410121641_HUASHUO-HSS2302A_C518779.pdf
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