Low Gate Voltage N Channel MOSFET HXY MOSFET SI7336ADP T1 GE3 HXY with 180mJ Avalanche Energy Rating
Key Attributes
Model Number:
SI7336ADP-T1-GE3-HXY
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
150A
Operating Temperature -:
-55℃~+150℃
RDS(on):
2.4mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
225pF
Number:
1 N-channel
Output Capacitance(Coss):
340pF
Pd - Power Dissipation:
187W
Input Capacitance(Ciss):
4.345nF
Gate Charge(Qg):
56.9nC@10V
Mfr. Part #:
SI7336ADP-T1-GE3-HXY
Package:
DFN5x6-8L
Product Description
SI7336ADP-T1-GE3
The SI7336ADP-T1-GE3 is an N-Channel Enhancement Mode MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, capable of operating with gate voltages as low as 4.5V. This device is designed for applications such as battery protection and general switching.
Product Attributes
- Brand: HXY (Shenzhen HuaXuanYang Electronics CO.,LTD)
- Origin: Shenzhen, China
- Type: N-Channel MOSFET
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
| VDS | Drain-Source Voltage | 30 | V | |||
| VGS | Gate-Source Voltage | ±20 | V | |||
| ID@TC=25 | Continuous Drain Current, VGS @ 10V | 150 | A | |||
| ID@TC=100 | Continuous Drain Current, VGS @ 10V | 80 | A | |||
| IDM | Pulsed Drain Current | 160 | A | |||
| EAS | Single Pulse Avalanche Energy | 180 | mJ | |||
| IAS | Avalanche Current | 60 | A | |||
| PD@TC=25 | Total Power Dissipation | 187 | W | |||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| RJA | Thermal Resistance Junction-Ambient | 1 | 62 | /W | ||
| RJC | Thermal Resistance Junction-Case | 1 | 1.1 | /W | ||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=250uA | 30 | V | ||
| RDS(ON) | Static Drain-Source On-Resistance | VGS=10V , ID=30A | 2.4 | mΩ | ||
| RDS(ON) | Static Drain-Source On-Resistance | VGS=4.5V , ID=15A | 3.2 | V | ||
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =250uA | 1.2 | 2.5 | V | |
| IDSS | Drain-Source Leakage Current | VDS=24V , VGS=0V , TJ=25 | 1 | uA | ||
| IGSS | Gate-Source Leakage Current | VGS=±20V , VDS=0V | ±100 | nA | ||
| Qg | Total Gate Charge | VDS=15V , VGS=10V , ID=15A | 56.9 | nC | ||
| Ciss | Input Capacitance | VDS=15V , VGS=0V , f=1MHz | 124.6 | pF | ||
| Coss | Output Capacitance | VDS=15V , VGS=0V , f=1MHz | 15.8 | pF | ||
| Crss | Reverse Transfer Capacitance | VDS=15V , VGS=0V , f=1MHz | 4.345 | pF | ||
| IS | Continuous Source Current | VG=VD=0V , Force Current | 150 | A | ||
| VSD | Diode Forward Voltage | VGS=0V , IS=1A , TJ=25 | 1.2 | V |
Applications
- Battery protection
- Load switch
- Uninterruptible power supply
2509181714_HXY-MOSFET-SI7336ADP-T1-GE3-HXY_C22366654.pdf
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