complementary MOSFET HUASHUO HSBA4909 with super low gate charge and excellent switching performance
Key Attributes
Model Number:
HSBA4909
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
15A
Operating Temperature -:
-55℃~+150℃
RDS(on):
13mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel + P-Channel
Reverse Transfer Capacitance (Crss@Vds):
222pF
Number:
1 N-Channel + 1 P-Channel
Output Capacitance(Coss):
323pF
Input Capacitance(Ciss):
3.5nF
Pd - Power Dissipation:
36W
Gate Charge(Qg):
29nC@4.5V
Mfr. Part #:
HSBA4909
Package:
PRPAK5x6-8L
Product Description
Product Overview
The HSBA4909 is a high-performance complementary N-channel and P-channel MOSFET series featuring high cell density. These MOSFETs offer excellent RDS(ON) and gate charge characteristics, making them ideal for synchronous buck converter applications. The HSBA4909 series is RoHS and Green Product compliant, with 100% EAS guaranteed and full functional reliability approval.
Product Attributes
- Brand: HS (HS-Semi)
- Certifications: RoHS, Green Product
- Key Features: 100% EAS Guaranteed, Green Device Available, Super Low Gate Charge, Excellent CdV/dt effect decline, Advanced high cell density Trench technology
Technical Specifications
| Model | Parameter | Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| HSBA4909 (N-Ch) | Drain-Source Voltage (VDS) | 40 | V | |||
| Gate-Source Voltage (VGS) | 20 | V | ||||
| Continuous Drain Current (ID@TC=25, VGS @ 10V) | 15 | A | ||||
| Continuous Drain Current (ID@TC=100, VGS @ 10V) | 10 | A | ||||
| Pulsed Drain Current (IDM) | 46 | A | ||||
| Single Pulse Avalanche Energy (EAS) | 76 | mJ | ||||
| Avalanche Current (IAS) | 39 | A | ||||
| Total Power Dissipation (PD@TC=25) | 36 | W | ||||
| Storage Temperature Range (TSTG) | -55 | 150 | ||||
| Operating Junction Temperature Range (TJ) | -55 | 150 | ||||
| Thermal Resistance Junction-Ambient (RJA) | --- | 62 | /W | |||
| Thermal Resistance Junction-Case (RJC) | --- | 3.5 | /W | |||
| Drain-Source Breakdown Voltage (BVDSS) | VGS=0V , ID=250uA | 40 | V | |||
| Static Drain-Source On-Resistance (RDS(ON)) | VGS=10V , ID=12A | --- | 8 | m | ||
| Static Drain-Source On-Resistance (RDS(ON)) | VGS=4.5V , ID=10A | --- | 10 | V | ||
| Gate Threshold Voltage (VGS(th)) | VGS=VDS , ID =250uA | 1.0 | 1.5 | 2.5 | V | |
| Total Gate Charge (Qg) | VDS=20V , VGS=4.5V , ID=12A | --- | 19 | nC | ||
| HSBA4909 (P-Ch) | Drain-Source Voltage (VDS) | -40 | V | |||
| Gate-Source Voltage (VGS) | 20 | V | ||||
| Continuous Drain Current (ID@TC=25, VGS @ 10V) | -15 | A | ||||
| Continuous Drain Current (ID@TC=100, VGS @ 10V) | -10 | A | ||||
| Pulsed Drain Current (IDM) | -46 | A | ||||
| Single Pulse Avalanche Energy (EAS) | 146 | mJ | ||||
| Avalanche Current (IAS) | -54 | A | ||||
| Total Power Dissipation (PD@TC=25) | 36 | W | ||||
| Storage Temperature Range (TSTG) | -55 | 150 | ||||
| Operating Junction Temperature Range (TJ) | -55 | 150 | ||||
| Thermal Resistance Junction-Ambient (RJA) | --- | 62 | /W | |||
| Thermal Resistance Junction-Case (RJC) | --- | 3.5 | /W | |||
| Drain-Source Breakdown Voltage (BVDSS) | VGS=0V , ID=-250uA | -40 | V | |||
| Static Drain-Source On-Resistance (RDS(ON)) | VGS=-10V , ID=-8A | --- | 13 | m | ||
| Static Drain-Source On-Resistance (RDS(ON)) | VGS=-4.5V , ID=-4A | --- | 20 | V | ||
| Gate Threshold Voltage (VGS(th)) | VGS=VDS , ID =-250uA | -1.0 | -1.5 | -2.5 | V | |
| Total Gate Charge (Qg) | VDS=-20V , VGS=-4.5V , ID=-12A | --- | 29 | nC |
2410121513_HUASHUO-HSBA4909_C2903570.pdf
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