P Channel MOSFET HXY MOSFET AO4485 with Low RDS ON and Gate Voltage Operation Starting at 2.5 Volts
Key Attributes
Model Number:
AO4485
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
13A
Operating Temperature -:
-55℃~+150℃
RDS(on):
19mΩ@10V,13A
Gate Threshold Voltage (Vgs(th)):
-
Reverse Transfer Capacitance (Crss@Vds):
172pF@20V
Number:
1 P-Channel
Pd - Power Dissipation:
3W
Input Capacitance(Ciss):
2.525nF@20V
Gate Charge(Qg):
35nC@10V
Mfr. Part #:
AO4485
Package:
SOP-8
Product Description
Product Overview
The AO4485 is a P-Channel Enhancement Mode MOSFET utilizing advanced trench technology. It offers excellent RDS(ON), low gate charge, and operation with gate voltages as low as 2.5V. This device is suitable for battery protection and other switching applications.
Product Attributes
- Brand: HUAXUANYANG HXY
- Origin: Shenzhen HuaXuanYang Electronics CO.,LTD
- Package: SOP-8 (SOIC-8)
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS = 0V, ID = -250A | -40 | - | - | V |
| Gate-body Leakage current | lGSS | VDS = 0V, VGS = 20V | - | - | 100 | nA |
| Zero Gate Voltage Drain Current | IDSS | VDS = -40V, VGS = 0V, TJ=25 | - | - | -1 | A |
| Zero Gate Voltage Drain Current | IDSS | VDS = -40V, VGS = 0V, TJ=100 | - | - | -100 | A |
| Gate-Threshold Voltage | VGS(th) | VDS = VGS, ID = -250A | -1.0 | -1.5 | -2.2 | V |
| Drain-Source On-Resistance | RDS(on) | VGS = -10V, ID = -10A | - | 14.0 | 19 | m |
| Drain-Source On-Resistance | RDS(on) | VGS = -4.5V, ID = -5 A | - | 19.5 | 25 | m |
| Forward Transconductance | gfs | VDS = -10V, ID = -10A | - | 44 | - | S |
| Input Capacitance | Ciss | VDS = -20V, VGS =0V, f =1MHz | - | 2525 | - | pF |
| Output Capacitance | Coss | VDS = -20V, VGS =0V, f =1MHz | - | 190 | - | pF |
| Reverse Transfer Capacitance | Crss | VDS = -20V, VGS =0V, f =1MHz | - | 172 | - | pF |
| Gate Resistance | Rg | f =1MHz | - | 10 | - | |
| Total Gate Charge | Qg | VGS = -10V,VDS = -20V, ID= -10A | - | 35 | - | nC |
| Gate-Source Charge | Qgs | VGS = -10V,VDS = -20V, ID= -10A | - | 5.5 | - | - |
| Gate-Drain Charge | Qg | VGS = -10V,VDS = -20V, ID= -10A | - | 8 | - | - |
| Turn-On Delay Time | td(on) | VGS = -10V, VDD = -20V, RG = 3, ID= -10A | - | 14.5 | - | ns |
| Rise Time | tr | VGS = -10V, VDD = -20V, RG = 3, ID= -10A | - | 20.2 | - | ns |
| Turn-Off Delay Time | td(off) | VGS = -10V, VDD = -20V, RG = 3, ID= -10A | - | 32 | - | ns |
| Fall Time | tf | VGS = -10V, VDD = -20V, RG = 3, ID= -10A | - | 10 | - | ns |
| Diode Forward Voltage | VSD | IS = -10A, VGS = 0V | - | - | -1.2 | V |
| Continuous Source Current | IS | TC=25C | - | - | -13 | A |
2509181604_HXY-MOSFET-AO4485_C5261057.pdf
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