Low Resistance Single N Channel MOSFET HYG037N04LR1D Suitable for Load Switch and Battery Protection
Key Attributes
Model Number:
HYG037N04LR1D
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
80A
Operating Temperature -:
-55℃~+175℃
RDS(on):
3.8mΩ@10V,20A
Gate Threshold Voltage (Vgs(th)):
1.9V
Reverse Transfer Capacitance (Crss@Vds):
-
Number:
1 N-channel
Pd - Power Dissipation:
62.5W
Input Capacitance(Ciss):
2.27nF
Gate Charge(Qg):
60nC@10V
Mfr. Part #:
HYG037N04LR1D
Package:
TO-252-2L
Product Description
Product Overview
The HYG037N04LR1D is a single N-Channel Enhancement Mode MOSFET designed for various applications including load switches and lithium battery protection boards. It features low on-state resistance (RDS(ON)= 3.8 m typ. @VGS = 10V), 100% avalanche tested, and is reliable and rugged. Halogen-free devices are available, complying with RoHS standards.
Product Attributes
- Brand: HYG
- Origin: China
- Material: Lead-free (RoHS Compliant), Halogen-Free
- Certifications: RoHS Compliant
Technical Specifications
| Part Number | Feature | RDS(ON) @ VGS=10V (typ.) | RDS(ON) @ VGS=4.5V (typ.) | VDSS | ID (Tc=25) | Application |
| HYG037N04LR1D | Single N-Channel Enhancement Mode MOSFET | 3.8 m | 6.1 m | 40V | 80A | Load Switch, Lithium battery protect board |
2410121314_HUAYI-HYG037N04LR1D_C5185879.pdf
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