P channel MOSFET trench technology 30V HUASHUO HSM9435 with low gate charge and switching performance
Key Attributes
Model Number:
HSM9435
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
5.5A
Operating Temperature -:
-55℃~+150℃
RDS(on):
60mΩ@10V,4A
Gate Threshold Voltage (Vgs(th)):
2.5V
Reverse Transfer Capacitance (Crss@Vds):
67pF@15V
Number:
1 P-Channel
Input Capacitance(Ciss):
483pF@15V
Pd - Power Dissipation:
1.5W
Gate Charge(Qg):
5.8nC@4.5V
Mfr. Part #:
HSM9435
Package:
SOP-8
Product Description
Product Overview
The HSM9435 is a P-channel, 30V fast switching MOSFET designed with high cell density trench technology. It offers excellent RDS(ON) and gate charge characteristics, making it suitable for synchronous buck converter applications. This device meets RoHS and Green Product requirements and has undergone full function reliability approval. Key features include super low gate charge and excellent Cdv/dt effect decline.
Product Attributes
- Brand: HS-Semi
- Product Type: P-Ch MOSFET
- Voltage Rating: 30V
- Technology: Trench
- Certifications: RoHS, Green Product
- Package: SOP-8
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | -30 | V | |||
| VGS | Gate-Source Voltage | ±20 | V | |||
| ID@TA=25 | Continuous Drain Current, VGS @ -10V1 | -5.5 | A | |||
| ID@TA=70 | Continuous Drain Current, VGS @ -10V1 | -4.3 | A | |||
| IDM | Pulsed Drain Current2 | -20 | A | |||
| EAS | Single Pulse Avalanche Energy3 | 11.3 | mJ | |||
| IAS | Avalanche Current | 15 | A | |||
| PD@TA=25 | Total Power Dissipation4 | 1.5 | W | |||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| Thermal Data | ||||||
| RJA | Thermal Resistance Junction-Ambient | --- | 55 | /W | ||
| Electrical Characteristics (TJ=25 , unless otherwise noted) | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=-250uA | -30 | --- | --- | V |
| ΔBVDSS/ΔTJ | BVDSS Temperature Coefficient | Reference to 25 , ID=-1mA | --- | -0.02 | --- | V/ |
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=-10V , ID=-4A | --- | 46 | 60 | m |
| VGS=-4.5V , ID=-2A | --- | 65 | 90 | m | ||
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =-250uA | -1.0 | --- | -2.5 | V |
| ΔVGS(th)/ΔTJ | VGS(th) Temperature Coefficient | --- | 4.32 | --- | mV/ | |
| IDSS | Drain-Source Leakage Current | VDS=-24V , VGS=0V , TJ=25 | --- | --- | -1 | uA |
| VDS=-24V , VGS=0V , TJ=55 | --- | --- | -5 | uA | ||
| IGSS | Gate-Source Leakage Current | VGS=±20V , VDS=0V | --- | --- | ±100 | nA |
| gfs | Forward Transconductance | VDS=-5V , ID=-4A | --- | 5.5 | --- | S |
| Rg | Gate Resistance | VDS=0V , VGS=0V , f=1MHz | --- | 24 | --- | |
| Qg | Total Gate Charge (-4.5V) | VDS=-20V , VGS=-4.5V , ID=-4A | --- | 5.8 | --- | nC |
| Qgs | Gate-Source Charge | --- | 1.4 | --- | nC | |
| Qgd | Gate-Drain Charge | --- | 2.6 | --- | nC | |
| td(on) | Turn-On Delay Time | VDD=-15V , VGS=-10V , RG=3.3 ID=-1A | --- | 18.6 | --- | ns |
| tr | Rise Time | --- | 12.4 | --- | ns | |
| td(off) | Turn-Off Delay Time | --- | 39.1 | --- | ns | |
| tf | Fall Time | --- | 5.9 | --- | ns | |
| Ciss | Input Capacitance | VDS=-15V , VGS=0V , f=1MHz | --- | 483 | --- | pF |
| Coss | Output Capacitance | --- | 89 | --- | pF | |
| Crss | Reverse Transfer Capacitance | --- | 67 | --- | pF | |
| Diode Characteristics | ||||||
| IS | Continuous Source Current1,5 | VG=VD=0V , Force Current | --- | --- | -5.5 | A |
| ISM | Pulsed Source Current2,5 | --- | --- | -20 | A | |
| VSD | Diode Forward Voltage2 | VGS=0V , IS=-1A , TJ=25 | --- | --- | -1 | V |
Ordering Information
| Part Number | Package Code | Packaging |
|---|---|---|
| HSM9435 | SOP-8 | 4000/Tape&Reel |
2410121516_HUASHUO-HSM9435_C5341679.pdf
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