Power MOSFET N Channel 80V 90A HUAYI HY1908D with Low On Resistance and Environmental Compliance
Key Attributes
Model Number:
HY1908D
Product Custom Attributes
Drain To Source Voltage:
80V
Current - Continuous Drain(Id):
90A
Operating Temperature -:
-
RDS(on):
9mΩ@10V,45A
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
239pF
Number:
1 N-channel
Input Capacitance(Ciss):
3.864nF
Output Capacitance(Coss):
365pF
Pd - Power Dissipation:
64W
Gate Charge(Qg):
84nC@10V
Mfr. Part #:
HY1908D
Package:
TO-252-2L
Product Description
Product Overview
The HOOYI HY1908D/U/S is an N-Channel Enhancement Mode MOSFET designed for power management in inverter systems. It offers high performance with 80V/90A ratings, avalanche ruggedness, and a low on-resistance of 7.8 m (typ.). This device is available in lead-free and green (RoHS compliant and halogen-free) options, ensuring reliability and environmental consciousness.
Product Attributes
- Brand: HOOYI
- Certifications: RoHS Compliant, Green Devices Available
- Material: Lead-free
Technical Specifications
| Model | Parameter | Rating | Unit | Conditions |
| HY1908D/U/S | Drain-Source Voltage (VDSS) | 80 | V | VGS=0V, IDS=250A |
| Gate-Source Voltage (VGSS) | 25 | V | ||
| Continuous Drain Current (ID) | 90 | A | TC=25C | |
| Continuous Drain Current (ID) | 59 | A | TC=100C | |
| Maximum Power Dissipation (PD) | 64 | W | TC=25C | |
| Maximum Power Dissipation (PD) | 32 | W | TC=100C | |
| Drain-Source On-state Resistance (RDS(ON)) | 7.8 | m | VGS=10V, IDS=45A (typ.) | |
| Gate Threshold Voltage (VGS(th)) | 2 - 4 | V | VDS=VGS, IDS=250A | |
| Avalanche Energy (EAS) | 3864 | mJ | L=0.5mH | |
| Input Capacitance (Ciss) | - | 365 | pF | VGS=0V, VDS=25V, Frequency=1.0MHz |
| Total Gate Charge (Qg) | - | 84 | nC | VDD=40V, RG=6 , IDS=45A, VGS=10V |
2410121902_HUAYI-HY1908D_C108891.pdf
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