SiC Power MOSFET N Channel Enhancement Mode Device HXY MOSFET STW70N65DM6 HXY for Power Applications
Key Attributes
Model Number:
STW70N65DM6-HXY
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
49A
RDS(on):
49mΩ
Gate Threshold Voltage (Vgs(th)):
4V
Reverse Transfer Capacitance (Crss@Vds):
19pF
Pd - Power Dissipation:
242W
Input Capacitance(Ciss):
1.823nF
Output Capacitance(Coss):
190pF
Gate Charge(Qg):
96nC
Mfr. Part #:
STW70N65DM6-HXY
Package:
TO-247
Product Description
Product Overview
The HUAXUANYANG STW70N65DM6 is a 3rd generation SiC Power MOSFET, N-Channel Enhancement Mode, designed for high-efficiency power applications. It features optimized packaging with a separate driver source pin, high blocking voltage with low on-resistance, and high-speed switching with low capacitances. The device boasts a fast intrinsic diode with low reverse recovery (Qrr), making it suitable for reducing switching losses and minimizing gate ringing. This RoHS compliant and halogen-free component contributes to higher system efficiency, reduced cooling requirements, increased power density, and higher system switching frequencies.
Product Attributes
- Brand: HUAXUANYANG
- Model: STW70N65DM6
- Technology: 3rd generation SiC MOSFET
- Channel Type: N-Channel Enhancement Mode
- Package: TO-247
- Certifications: Halogen free, RoHS compliant
- Website: www.hxymos.com
- Origin: Shenzhen HuaXuanYang Electronics CO.,LTD
Technical Specifications
| Parameter | Symbol | Test Condition | Value | Unit |
|---|---|---|---|---|
| Maximum Ratings | ||||
| Drain-source voltage | VDS | TC = 25C | 650 | V |
| Continuous drain current | ID | TC = 25C | 123 | A |
| Continuous drain current | ID | TC = 100C | 49 | A |
| Pulsed drain current | ID pulse | (TC = 25C, tp limited by Tjmax) | 242 | A |
| Gate-Source voltage | VGS | - | -5/+20 | V |
| Power dissipation | Ptot | TC = 25C | 1000 | W |
| Operating junction and storage temperature | Tj , Tstg | - | -55...+175 | C |
| Avalanche energy, single pulse | EAS | (L=10mH) | 40 | mJ |
| Thermal Resistance | ||||
| Thermal resistance, junction case. Max | RthJC | - | 0.62 | C/W |
| Thermal resistance, junction ambient. Max | RthJA | - | 30 | C/W |
| Static Characteristic | ||||
| Drain-source breakdown voltage | BVDSS | VGS=0V, ID = 250uA | 650 | V |
| Gate threshold voltage | VGS(th) | VDS=VGS,ID=7mA | 19 | V |
| Drain-source on-state resistance | RDS(on) | VGS=20V, ID=17.6A, Tj=25C | 25 | m |
| Drain-source on-state resistance | RDS(on) | VGS=20V, ID=17.6A, Tj=175C | 48 | m |
| Zero gate voltage drain current | IDSS | VDS=650V,VGS=0V, Tj=25C | 1 | A |
| Zero gate voltage drain current | IDSS | VDS=650V,VGS=0V, Tj=175C | 250 | A |
| Gate-source leakage current | IGSS | VGS=20V | 10 | nA |
| Transconductance | gfs | VDS=20V,ID=17.6A | 19 | S |
| Dynamic Characteristic | ||||
| Input Capacitance | Ciss | VGS=0V, ID=0A, f = 1MHz | 1823 | pF |
| Output Capacitance | Coss | VGS=0V, ID=0A, f = 1MHz | 156 | pF |
| Reverse Transfer Capacitance | Crss | VGS=0V, ID=0A, f = 1MHz | 40 | pF |
| Gate Total Charge | QG | VDS=400V, VGS=-5/20V, ID=17.6A | 15 | nC |
| Gate-Drain charge | QG | VDS=400V, VGS=-5/20V, ID=17.6A | 5.6 | nC |
| Gate-Source charge | Qgs | VDS=400V, VGS=-5/20V, ID=17.6A | 1.7 | nC |
| Turn-on delay time | td(on) | VDD = 400V, VGS = -5/+20V, ID = 17.6A, RG = 10, L = 100uH | 19 | ns |
| Rise time | tr | VDD = 400V, VGS = -5/+20V, ID = 17.6A, RG = 10, L = 100uH | 26 | ns |
| Turn-off delay time | td(off) | VDD = 400V, VGS = -5/+20V, ID = 17.6A, RG = 10, L = 100uH | 45 | ns |
| Fall time | tf | VDD = 400V, VGS = -5/+20V, ID = 17.6A, RG = 10, L = 100uH | 33 | ns |
| Turn-On Switching Energy | EON | VGS=20V, VDS=0V, ID=17.6A, RG=10, L=100uH | 190 | J |
| Turn-Off Switching Energy | EOFF | VGS=18V, ID=17.6A, RG=10, L=100uH | 15 | J |
| Body Diode Characteristic | ||||
| Body Diode Reverse Recovery Charge | Qrr | VR = 400V, ID = 17.6A, di/dt = 1000A/S | 156 | nC |
| Body Diode Reverse Recovery Time | trr | VGS=0V,ISD=8.8A, TJ=25C | 2.6 | s |
| Body Diode Forward Voltage | VSD | VGS=0V,ISD=8.8A, TJ=175C | 3.2 | V |
Applications
- Renewable energy
- EV battery chargers
- High voltage DC/DC converters
- Switch Mode Power Supplies
2509181733_HXY-MOSFET-STW70N65DM6-HXY_C48972066.pdf
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