IGBT transistor HXY MOSFET IXYX120N120C3-HXY 1200V 140A with low switching losses and rugged design
Key Attributes
Model Number:
IXYX120N120C3-HXY
Product Custom Attributes
Td(off):
359ns
Pd - Power Dissipation:
1.091kW
Td(on):
183ns
Collector-Emitter Breakdown Voltage (Vces):
1.2kV
Reverse Transfer Capacitance (Cres):
59.4pF
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
5.17V@2.24mA
Operating Temperature:
-40℃~+175℃
Gate Charge(Qg):
473nC@15V
Reverse Recovery Time(trr):
137ns
Switching Energy(Eoff):
8.9mJ
Turn-On Energy (Eon):
11.9mJ
Input Capacitance(Cies):
16.191nF
Pulsed Current- Forward(Ifm):
560A
Output Capacitance(Coes):
407pF
Mfr. Part #:
IXYX120N120C3-HXY
Package:
TO-247P
Product Description
Product Overview
The IXYX120N120C3 is a 1200V, 140A Insulated Gate Bipolar Transistor (IGBT) designed for high-efficiency applications. It features high input impedance, low switching losses, and a low saturation voltage (VCE(SAT)). Copacked with a fast recovery diode, it offers low conduction loss and rugged transient reliability, making it suitable for demanding applications like string solar inverters and EV-charging systems.
Product Attributes
- Brand: HUAXUANYANG HXY ELECTRONICS CO.,LTD
- Model: IXYX120N120C3
- Origin: Shenzhen HuaXuanYang Electronics CO.,LTD
- Package: TO-247P
- Packing: 30PCS
- Website: www.hxymos.com
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | ||||||
| Collector emitter voltage | VCE | @ TVJ = 25C unless otherwise specified | - | - | 1200 | V |
| DC collector current | IC | TC = 25C | - | - | 240 | A |
| DC collector current | IC | TC = 100C | - | - | 140 | A |
| Pulsed collector current | ICM | TC = 25C | - | - | 560 | A |
| Maximum Diode forward current | IF | TC = 25C | - | - | 240 | A |
| Maximum Diode forward current | IF | TC = 100C | - | - | 140 | A |
| Diode pulsed current | IFM | TC = 25C | - | - | 560 | A |
| Gate-Emitter voltage | VGE | TVJ = 25C | - | - | 20 | V |
| Power Dissipation | Ptot | TC = 25C | - | - | 1091 | W |
| Power Dissipation | Ptot | TC = 100C | - | - | 545 | W |
| Operating Junction Temperature Range | TVJ | - | -40 | - | +175 | C |
| Storage Temperature Range | TSTG | - | -55 | - | +150 | C |
| Thermal Resistance | ||||||
| IGBT Thermal resistance: junction - case | RJC | IGBT | - | 0.11 | - | C/W |
| Diode Thermal resistance: junction - case | RJC | Diode | - | 0.17 | - | C/W |
| Electrical Characteristics | ||||||
| Collector - Emitter Breakdown Voltage | V(BR)CES | VGE = 0V , IC = 0.5mA | 1200 | - | - | V |
| Collector - Emitter Saturation Voltage | VCESAT | VGE = 15V , IC = 140A, TVJ = 25C | - | 1.55 | - | V |
| Collector - Emitter Saturation Voltage | VCESAT | VGE = 15V , IC = 140A, TVJ = 175C | - | 1.81 | - | V |
| Diode forward voltage | VF | VGE = 0V , IC = 140A, TVJ = 25C | - | 2.01 | - | V |
| Diode forward voltage | VF | VGE = 0V , IC = 140A, TVJ = 175C | - | 2.19 | - | V |
| Gate-Emitter threshold voltage | VGE(th) | VGE = VCE, IC = 2.24mA | - | 5.17 | - | V |
| Zero Gate voltage Collector current | ICES | VCE = 1200V , VGE = 0V | - | - | 40.0 | mA |
| Gate-Emitter leakage current | IGES | VGE = 20V , VCE = 0V | - | - | 100 | nA |
| Dynamic Characteristics | ||||||
| Input Capacitance | Cies | VGE = 0V, VCE = 25V, f = 100k Hz | - | 16191 | - | pF |
| Output Capacitance | Coes | - | - | 407 | - | pF |
| Reverse Transfer Capacitance | Cres | - | - | 59.4 | - | pF |
| Gate input resistance | RG | f = 1M Hz | - | 0.8 | - | |
| Gate Charge | Qg | VGE = 0 to 15V VCE = 960V, IC = 140A | - | 473 | - | nC |
| Gate to Emitter charge | Qge | - | - | 122 | - | nC |
| Gate to Collector charge | Qgc | - | - | 112 | - | nC |
| Switching Characteristics (TVJ = 25 C) | ||||||
| Turn-On DelayTime | td(on) | VCC = 600 V, IC =140 A, VGE = 0 / 15 V, RG = 10 | - | 183 | - | ns |
| Turn-On Rise Time | tr | - | - | 241 | - | ns |
| Turn-Off DelayTime | td(off) | - | - | 359 | - | ns |
| Turn-Off Fall Time | tf | - | - | 221 | - | ns |
| Turn-on energy | Eon | - | - | 11.9 | - | mJ |
| Turn-off energy | Eoff | - | - | 8.9 | - | mJ |
| Total switching energy | Ets | - | - | 20.8 | - | mJ |
| Switching Characteristics (TVJ = 175 C) | ||||||
| Turn-On DelayTime | td(on) | VCC = 600 V, IC =140 A, VGE = 0 / 15 V, RG = 10 | - | 165 | - | ns |
| Turn-On Rise Time | tr | - | - | 262 | - | ns |
| Turn-Off DelayTime | td(off) | - | - | 395 | - | ns |
| Turn-Off Fall Time | tf | - | - | 274 | - | ns |
| Turn-on energy | Eon | - | - | 12.8 | - | mJ |
| Turn-off energy | Eoff | - | - | 10.1 | - | mJ |
| Total switching energy | Ets | - | - | 22.9 | - | mJ |
| Diode Recovery Characteristics (TVJ = 25 C) | ||||||
| Reverse recovery time | Trr | VCC = 600 V, IC =140 A, VGE = 0 / 15 V, RG = 10 | - | 137 | - | ns |
| Reverse recovery charge | Qrr | - | - | 0.81 | - | mC |
| Peak reverse recovery current | Irrm | - | - | 9.3 | - | A |
| Reverse recovery energy | Erec | - | - | 9.3 | - | mJ |
| Diode Recovery Characteristics (TVJ = 175 C) | ||||||
| Reverse recovery time | Trr | VCC = 600 V, IC =140 A, VGE = 0 / 15 V, RG = 10 | - | 511 | - | ns |
| Reverse recovery charge | Qrr | - | - | 5.4 | - | mC |
| Peak reverse recovery current | Irrm | - | - | 17.5 | - | A |
| Reverse recovery energy | Erec | - | - | 1.6 | - | mJ |
2509181739_HXY-MOSFET-IXYX120N120C3-HXY_C49003477.pdf
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