High current MOSFET HUAYI HYG016N10NS1TA N Channel 100V 370A for inverter and power switching needs
Key Attributes
Model Number:
HYG016N10NS1TA
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
370A
Operating Temperature -:
-55℃~+175℃
RDS(on):
1.35mΩ@10V,100A
Gate Threshold Voltage (Vgs(th)):
2V
Reverse Transfer Capacitance (Crss@Vds):
275pF
Number:
1 N-channel
Pd - Power Dissipation:
428.5W
Mfr. Part #:
HYG016N10NS1TA
Package:
TOLL-8L
Product Description
Product Overview
The HYG016N10NS1TA is an N-Channel Enhancement Mode MOSFET designed for switching applications and power management in inverter systems. It features high current handling capabilities (100V/370A) and low on-resistance (RDS(ON)=1.35m typ. @VGS = 10V). The device is 100% avalanche tested, offering reliability and ruggedness. Halogen-free and RoHS compliant options are available.
Product Attributes
- Brand: HYG
- Origin: China
- Certifications: RoHS Compliant, Halogen-Free
Technical Specifications
| Symbol | Parameter | Test Conditions | Unit | Min | Typ. | Max |
| Absolute Maximum Ratings | ||||||
| VDSS | Drain-Source Voltage | V | 100 | |||
| VGSS | Gate-Source Voltage | V | 20 | |||
| TJ | Junction Temperature Range | C | -55 | 175 | ||
| TSTG | Storage Temperature Range | C | -55 | 175 | ||
| ID | Continuous Drain Current | Tc=25C | A | 370 | ||
| ID | Continuous Drain Current | Tc=100C | A | 261.6 | ||
| IDM | Pulsed Drain Current | Tc=25C | A | 1200 | ||
| PD | Maximum Power Dissipation | Tc=25C | W | 428.5 | ||
| PD | Maximum Power Dissipation | Tc=100C | W | 214.3 | ||
| RJC | Thermal Resistance, Junction-to-Case | C/W | 0.35 | |||
| RJA | Thermal Resistance, Junction-to-Ambient | C/W | 45 | |||
| EAS | Single Pulsed-Avalanche Energy | L=0.3mH | mJ | 1090 | ||
| Static Characteristics | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V,IDS= 250A | V | 100 | ||
| IDSS | Drain-to-Source Leakage Current | VDS=100V,VGS=0V | A | 1 | ||
| IDSS | Drain-to-Source Leakage Current | TJ=125C | A | 50 | ||
| VGS(th) | Gate Threshold Voltage | VDS=VGS, IDS= 250A | V | 2 | 3 | 4 |
| IGSS | Gate-Source Leakage Current | VGS=20V,VDS=0V | nA | 100 | ||
| RDS(ON) | Drain-Source On-State Resistance | VGS= 10V,IDS=100A | m | 1.35 | 1.6 | |
| Diode Characteristics | ||||||
| VSD | Diode Forward Voltage | ISD=100A,VGS=0V | V | 0.85 | 1.2 | |
| trr | Reverse Recovery Time | ISD=100A,dISD/dt=100A/s | ns | 82 | ||
| Qrr | Reverse Recovery Charge | nC | 140 | |||
| Dynamic Characteristics | ||||||
| RG | Gate Resistance | VGS=0V,VDS=0V,F=1MHz | 1.2 | |||
| Ciss | Input Capacitance | VGS=0V, VDS= 25V, Frequency=1.0MHz | pF | 13720 | ||
| Coss | Output Capacitance | pF | 5100 | |||
| Crss | Reverse Transfer Capacitance | pF | 275 | |||
| td(ON) | Turn-on Delay Time | VDD= 50V,RG=4.0, IDS= 100A,VGS= 10V | ns | 54 | ||
| Tr | Turn-on Rise Time | ns | 118 | |||
| td(OFF) | Turn-off Delay Time | ns | 116 | |||
| Tf | Turn-off Fall Time | ns | 141 | |||
| Gate Charge Characteristics | ||||||
| Qg | Total Gate Charge | VDS =80V, VGS=10V,IDs=100A | nC | 217 | ||
| Qgs | Gate-Source Charge | nC | 75 | |||
| Qgd | Gate-Drain Charge | nC | 47 | |||
2410121242_HUAYI-HYG016N10NS1TA_C6851451.pdf
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