Fast Switching N Channel MOSFET HSU150N03 with High Cell Density and Low Gate Charge Characteristics
Key Attributes
Model Number:
HSU150N03
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
150A
Operating Temperature -:
-55℃~+150℃
RDS(on):
3.2mΩ@10V,30A
Gate Threshold Voltage (Vgs(th)):
2.5V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
410pF
Number:
1 N-channel
Output Capacitance(Coss):
480pF
Input Capacitance(Ciss):
3.5nF
Pd - Power Dissipation:
60W
Gate Charge(Qg):
39nC@10V
Mfr. Part #:
HSU150N03
Package:
TO-252-2
Product Description
Product Overview
The HSU150N03 is a high cell density trenched N-channel MOSFET designed for fast switching applications. It offers excellent RDS(ON) and gate charge, making it ideal for synchronous buck converter applications. This product meets RoHS and Green Product requirements, is 100% EAS guaranteed, and has full function reliability approval. It features super low gate charge and excellent CdV/dt effect decline due to its advanced high cell density trench technology.
Product Attributes
- Brand: HSU-SEMI
- Product Type: N-Ch Fast Switching MOSFETs
- Certifications: RoHS, Green Product
- Reliability: 100% EAS Guaranteed, Full Function Reliability Approved
- Technology: Advanced high cell density Trench technology
Technical Specifications
| Model | Parameter | Conditions | Min. | Typ. | Max. | Units | |
|---|---|---|---|---|---|---|---|
| HSU150N03 | Drain-Source Voltage (VDS) | 30 | V | ||||
| Gate-Source Voltage (VGS) | ±20 | V | |||||
| Continuous Drain Current (ID@TC=25) | VGS @ 10V | 1,6 | 150 | A | |||
| Continuous Drain Current (ID@TC=100) | VGS @ 10V | 1,6 | 95 | A | |||
| Pulsed Drain Current (IDM) | 2 | 590 | A | ||||
| Single Pulse Avalanche Energy (EAS) | 3 | 226 | mJ | ||||
| Avalanche Current (IAS) | 30 | A | |||||
| Total Power Dissipation (PD@TC=25) | 4 | 60 | W | ||||
| Storage Temperature Range (TSTG) | -55 | 150 | |||||
| Operating Junction Temperature Range (TJ) | -55 | 150 | |||||
| Thermal Resistance Junction-Ambient (RJA) | 1 | --- | 62 | /W | |||
| Thermal Resistance Junction-Case (RJC) | 1 | --- | 1.4 | /W | |||
| Drain-Source Breakdown Voltage (BVDSS) | VGS=0V , ID=250uA | 30 | --- | --- | V | ||
| Static Drain-Source On-Resistance (RDS(ON),typ) | VGS=10V , ID=30A | 2 | 2.4 | 3.2 | m | ||
| Static Drain-Source On-Resistance (RDS(ON)) | VGS=4.5V , ID=20A | 2 | 4.4 | 6.5 | m | ||
| HSU150N03 | Gate Threshold Voltage (VGS(th)) | VGS=VDS , ID =250uA | 1.2 | --- | 2.5 | V | |
| Drain-Source Leakage Current (IDSS) | VDS=24V , VGS=0V , TJ=25 | --- | --- | 1 | uA | ||
| Drain-Source Leakage Current (IDSS) | VDS=24V , VGS=0V , TJ=55 | --- | --- | 5 | uA | ||
| Gate-Source Leakage Current (IGSS) | VGS=±20V , VDS=0V | --- | --- | ±100 | nA | ||
| Total Gate Charge (Qg) | VDS=15V , VGS=10V , ID=30A | --- | 39 | --- | nC | ||
| Gate-Source Charge (Qgs) | --- | 10 | --- | nC | |||
| Gate-Drain Charge (Qgd) | --- | 12 | --- | nC | |||
| Turn-On Delay Time (Td(on)) | VDD=15V , VGS=10V , RG=3.3, ID=30A | --- | 20.1 | --- | ns | ||
| Rise Time (Tr) | --- | 23 | --- | ns | |||
| Turn-Off Delay Time (Td(off)) | --- | 99 | --- | ns | |||
| Fall Time (Tf) | --- | 37 | --- | ns | |||
| Input Capacitance (Ciss) | VDS=15V , VGS=0V , f=1MHz | --- | 3500 | --- | pF | ||
| Output Capacitance (Coss) | --- | 480 | --- | pF | |||
| Reverse Transfer Capacitance (Crss) | --- | 410 | --- | pF | |||
| HSU150N03 | Continuous Source Current (IS) | VG=VD=0V , Force Current | 1,6 | --- | --- | 150 | A |
| Diode Forward Voltage (VSD) | VGS=0V , IS=1A , TJ=25 | 2 | --- | --- | 1.2 | V | |
| Reverse Recovery Time (trr) | If=20A,di/dt=100A/us | --- | 44 | --- | ns | ||
| Reverse Recovery Charge (Qrr) | --- | 37 | --- | nC |
Package Outline Dimensions (TO252):
| SYMBOL | MILLIMETERS (MIN) | MILLIMETERS (NOM) | MILLIMETERS (MAX) | SYMBOL | MILLIMETERS (MIN) | MILLIMETERS (NOM) | MILLIMETERS (MAX) |
|---|---|---|---|---|---|---|---|
| A | 2.20 | 2.30 | 2.38 | H | 9.90 | 10.10 | 10.30 |
| A1 | 0.00 | --- | 0.10 | L | 1.40 | 1.50 | 1.70 |
| A2 | 0.97 | 1.07 | 1.17 | L1 | 2.90 | REF | |
| b | 0.72 | 0.78 | 0.85 | L2 | 0.51 | BSC | |
| b3 | 5.23 | 5.33 | 5.46 | L3 | 0.90 | --- | 1.25 |
| c | 0.47 | 0.53 | 0.58 | L4 | 0.60 | 0.80 | 1.00 |
| D | 6.00 | 6.10 | 6.20 | L5 | 1.70 | 1.80 | 1.90 |
| D1 | 5.30 | REF | 0° | --- | 8° | ||
| E | 6.50 | 6.60 | 6.70 | 1 | 5° | 7° | 9° |
| E1 | 4.70 | 4.83 | 4.92 | 2 | 5° | 7° | 9° |
| e | 2.286 | BSC | K | 0.40 | REF |
2010160905_HUASHUO-HSU150N03_C845614.pdf
Related Products
Switching amplifier NPN transistor YONGYUTAI 2N3904 epitaxial planar type with 100 milliamps collector current rating
Product OverviewNPN silicon epitaxial planar transistor designed for switching and amplifier applications. It is recommended as a complementary type to the PNP transistor 2N3906. This transistor is also available in the SOT-23 case under the type designation MMBT3904.Product AttributesBrand: Not ...
General purpose Zener diode YANGJIE BZX584B4V3 with cathode polarity and RoHS compliant certification
Product OverviewThe BZX584B2V4 THRU BZX584B36V series are high-reliability Zener diodes featuring very sharp reverse characteristics and low reverse current levels. They are designed for general-purpose applications and are available with Zener voltages ranging from 2.4V to 36V.Product AttributesBra...
RoHS Compliant NPN Amplifier YANGJIE S8050-H with Epoxy Casing and Collector Power Dissipation 300mW
Product OverviewThe S8050-L through S8050-H series are NPN general-purpose amplifiers manufactured by Yangzhou Yangjie Electronic Technology Co., Ltd. These components are designed for general amplification applications and feature an epoxy casing that meets UL-94 V-0 flammability rating. Halogen...
Silicon Carbide Schottky Barrier Diode Wolfspeed E4D20120A 1200 Volt 20 Amp Automotive Grade Device
Product Overview This 4th Generation 1200 V, 20 A Silicon Carbide (SiC) Schottky Barrier diode, designated E4D20120A, offers significant performance advantages over silicon-based solutions. Power electronics systems can achieve higher efficiency standards, reach higher frequencies, and attain ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
