Low On Resistance MOSFET HUAYI HYG006N04LS1TA for Inverter Systems and Power Management Applications
Key Attributes
Model Number:
HYG006N04LS1TA
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
600A
Operating Temperature -:
-55℃~+175℃
RDS(on):
0.75mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
-
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
115pF
Number:
1 N-channel
Output Capacitance(Coss):
3.2nF
Pd - Power Dissipation:
428W
Input Capacitance(Ciss):
15.4nF
Gate Charge(Qg):
230nC@10V
Mfr. Part #:
HYG006N04LS1TA
Package:
TOLL
Product Description
HYG006N04LS1TA N-Channel Enhancement Mode MOSFET
The HYG006N04LS1TA is a high-performance N-Channel Enhancement Mode MOSFET designed for switching applications and power management in inverter systems. It offers a low on-resistance of 0.45 m (typ.) at VGS = 10V and 0.61 m (typ.) at VGS = 4.5V, along with 100% avalanche testing for enhanced reliability and ruggedness. Halogen-free and RoHS compliant options are available.
Product Attributes
- Brand: HYG (Huayi Microelectronics Co., Ltd.)
- Origin: China
- Certifications: RoHS Compliant, Halogen-Free Available
Technical Specifications
| Parameter | Test Conditions | Min | Typ. | Max | Unit |
| Absolute Maximum Ratings | |||||
| Drain-Source Voltage (VDSS) | 40 | V | |||
| Gate-Source Voltage (VGSS) | 20 | V | |||
| Junction Temperature (TJ) | -55 | 175 | C | ||
| Storage Temperature (TSTG) | -55 | 175 | C | ||
| Source Current-Continuous (IS) | Tc=25C, Mounted on Large Heat Sink | 600 | A | ||
| Pulsed Drain Current (IDM) | Tc=25C | 2400 | A | ||
| Continuous Drain Current (ID) | Tc=25C | 600 | A | ||
| Continuous Drain Current (ID) | Tc=100C | 424 | A | ||
| Maximum Power Dissipation (PD) | Tc=25C | 428 | W | ||
| Maximum Power Dissipation (PD) | Tc=100C | 214 | W | ||
| Thermal Resistance, Junction-to-Case (RJC) | 0.35 | C/W | |||
| Thermal Resistance, Junction-to-Ambient (RJA) | Surface mounted on 1in FR-4 board | 45 | C/W | ||
| Single Pulsed-Avalanche Energy (EAS) | L=1mH | 2300 | mJ | ||
| Electrical Characteristics | |||||
| Drain-Source Breakdown Voltage (BVDSS) | VGS=0V, IDS= 250A | 40 | - | - | V |
| Drain-to-Source Leakage Current (IDSS) | VDS=40V,VGS=0V | - | - | 1 | A |
| Drain-to-Source Leakage Current (IDSS) | TJ=125C | - | - | 50 | A |
| Gate Threshold Voltage (VGS(th)) | VDS=VGS, IDS= 250A | 1.3 | 1.8 | 2.4 | V |
| Gate-Source Leakage Current (IGSS) | VGS=20V,VDS=0V | - | - | 100 | nA |
| Drain-Source On-State Resistance (RDS(ON)) | VGS= 10V,IDS=80A | - | 0.45 | 0.60 | m |
| Drain-Source On-State Resistance (RDS(ON)) | VGS= 4.5V,IDS=80A | - | 0.61 | 0.75 | m |
| Diode Forward Voltage (VSD) | ISD=80A,VGS=0V | - | 0.78 | 1.2 | V |
| Reverse Recovery Time (trr) | ISD=40A,dISD/dt=100A/s | - | 80 | - | ns |
| Reverse Recovery Charge (Qrr) | - | 148 | - | nC | |
| Gate Resistance (RG) | VGS=0V,VDS=0V,F=1MHz | - | 3.2 | - | |
| Input Capacitance (Ciss) | VGS=0V, VDS= 25V, Frequency=300kHz | - | 15400 | - | pF |
| Output Capacitance (Coss) | - | 3200 | - | pF | |
| Reverse Transfer Capacitance (Crss) | - | 115 | - | pF | |
| Turn-on Delay Time (td(ON)) | VDD= 20V,RG=2.5, IDS= 80A,VGS= 10V | - | 28 | - | ns |
| Turn-on Rise Time (Tr) | - | 104 | - | ns | |
| Turn-off Delay Time (td(OFF)) | - | 125 | - | ns | |
| Turn-off Fall Time (Tf) | - | 114 | - | ns | |
| Total Gate Charge (Qg) | VGS=10V, VDS =32V, VGS=10V,IDs=80A | - | 230 | - | nC |
| Total Gate Charge (Qg) | VGS=4.5V | - | 110 | - | nC |
| Gate-Source Charge (Qgs) | - | 50 | - | nC | |
| Gate-Drain Charge (Qgd) | - | 38 | - | nC | |
2409271603_HUAYI-HYG006N04LS1TA_C2982928.pdf
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