Low On Resistance N Channel MOSFET HUAYI HYG025N06LS1D Suitable for High Frequency Power Applications
Key Attributes
Model Number:
HYG025N06LS1D
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
160A
RDS(on):
3.3mΩ@10V
Operating Temperature -:
-55℃~+175℃
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
10.2pF
Number:
1 N-channel
Input Capacitance(Ciss):
3.915nF
Pd - Power Dissipation:
125W
Gate Charge(Qg):
58.3nC
Mfr. Part #:
HYG025N06LS1D
Package:
TO-252-2L
Product Description
Product Overview
The HYG025N06LS1D is a single N-Channel Enhancement Mode MOSFET designed for high-performance applications. It features low on-resistance (RDS(ON) = 2.6 m typ. @ VGS = 10V), 100% avalanche tested, and a reliable, rugged design. Halogen-free and RoHS compliant versions are available. This MOSFET is suitable for high frequency point-of-load synchronous buck converters, power tool applications, and networking DC-DC power systems.
Product Attributes
- Brand: HYG
- Model: HYG025N06LS1D
- Package Type: TO-252-2L
- Certifications: RoHS Compliant, Halogen-Free Devices Available
- Material: Lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight)
- Origin: China (Huayi Microelectronics Co., Ltd.)
Technical Specifications
| Parameter | Symbol | Test Conditions | Unit | Min | Typ. | Max |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDSS | Tc=25C Unless Otherwise Noted | V | 60 | ||
| Gate-Source Voltage | VGSS | V | 20 | |||
| Maximum Junction Temperature | TJ | C | 175 | |||
| Storage Temperature Range | TSTG | C | -55 | 175 | ||
| Source Current-Continuous (Body Diode) | IS | Tc=25C, Mounted on Large Heat Sink | A | 160 | ||
| Pulsed Drain Current | IDM | Tc=25C | A | 620 | ||
| Continuous Drain Current | ID | Tc=25C | A | 160 | ||
| Continuous Drain Current | ID | Tc=100C | A | 113 | ||
| Maximum Power Dissipation | PD | Tc=25C | W | 125 | ||
| Maximum Power Dissipation | PD | Tc=100C | W | 62.5 | ||
| Thermal Resistance, Junction-to-Case | RJC | C/W | 1.2 | |||
| Thermal Resistance, Junction-to-Ambient | RJA | Surface mounted on FR-4 board. | C/W | 110 | ||
| Single-Pulsed-Avalanche Energy | EAS | L=0.3mH | mJ | 301.8 | ||
| Static Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V,IDS=250A | V | 60 | ||
| Drain-to-Source Leakage Current | IDSS | VDS=60V,VGS=0V | A | 1 | ||
| Drain-to-Source Leakage Current | IDSS | TJ=100C | A | 50 | ||
| Gate Threshold Voltage | VGS(th) | VDS=VGS, IDS=250A | V | 1.0 | 2.1 | 3.0 |
| Gate-Source Leakage Current | IGSS | VGS=20V,VDS=0V | nA | 100 | ||
| Drain-Source On-State Resistance | RDS(ON) | VGS=10V,IDS=40A | m | 2.6 | 3.3 | |
| Drain-Source On-State Resistance | RDS(ON) | VGS=4.5V,IDS=40A | m | 3.8 | 4.7 | |
| Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | ISD=40A,VGS=0V | V | 0.85 | 1.3 | |
| Reverse Recovery Time | trr | ISD=40A,dISD/dt=100A/s | ns | 41.1 | ||
| Reverse Recovery Charge | Qrr | nC | 48.2 | |||
| Dynamic Characteristics | ||||||
| Gate Resistance | RG | VGS=0V,VDS=0V,F=1MHz | 0.58 | |||
| Input Capacitance | Ciss | VGS=0V, VDS=25V, Frequency=1.0MHz | pF | 3915 | ||
| Output Capacitance | Coss | pF | 1310 | |||
| Reverse Transfer Capacitance | Crss | pF | 10.2 | |||
| Turn-on Delay Time | td(ON) | VDD=30V,RG=4, IDS=40A,VGS=10V | ns | 15.3 | ||
| Turn-on Rise Time | Tr | ns | 34 | |||
| Turn-off Delay Time | td(OFF) | ns | 33 | |||
| Turn-off Fall Time | Tf | ns | 9.4 | |||
| Gate Charge Characteristics | ||||||
| Total Gate Charge | Qg10V | VDS =48V, VGS=10V, ID=40A | nC | 58.3 | ||
| Total Gate Charge | Qg4.5V | nC | 27.7 | |||
| Gate-Source Charge | Qgs | nC | 15.7 | |||
| Gate-Drain Charge | Qgd | nC | 9.7 | |||
2409302203_HUAYI-HYG025N06LS1D_C2891600.pdf
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